Abstract: Provided is a hot-band annealing method comprising subjecting a Si-containing hot rolled steel sheet, having an oxidized scale formed on a surface of the steel sheet by hot rolling, to hot-band annealing with a hot-band annealing equipment provided with a heating zone, a soaking zone, a cooling zone, and a rapid heating device at an upstream side of the heating zone and/or in an inlet side of the heating zone, wherein the hot rolled steel sheet is heated by not lower than 50° C. at a heating rate of not less than 15° C./s by using the rapid heating device to improve a descaling property. Also, provided is a descaling method characterized by subjecting the Si-containing hot rolled steel sheet, after the hot-band annealing, to descaling only by pickling without requiring mechanical descaling or heating the steel sheet in the pickling process.

Abstract: Provided is a hot-band annealing method comprising subjecting a Si-containing hot rolled steel sheet, having an oxidized scale formed on a surface of the steel sheet by hot rolling, to hot-band annealing with a hot-band annealing equipment provided with a heating zone, a soaking zone, a cooling zone, and a rapid heating device at an upstream side of the heating zone and/or in an inlet side of the heating zone, wherein the hot rolled steel sheet is heated by not lower than 50° C. at a heating rate of not less than 15° C./s by using the rapid heating device to improve a descaling property. Also, provided is a descaling method characterized by subjecting the Si-containing hot rolled steel sheet, after the hot-band annealing, to descaling only by pickling without requiring mechanical descaling or heating the steel sheet in the pickling process.

Abstract: Provided is a hot-band annealing equipment provided with a heating zone, a soaking zone and a cooling zone for subjecting a Si-containing hot rolled steel sheet to hot-band annealing, wherein when the Si-containing hot rolled steel sheet is subjected to hot-band annealing with the hot-band annealing equipment provided with a rapid heating device at an upstream side of the heating zone and/or in an inlet side of the heating zone, the hot rolled steel sheet is heated by not lower than 50° C. at a heating rate of not less than 15° C./s by using the rapid heating device to improve a descaling property, whereby descaling can be performed only by pickling without requiring mechanical descaling or heating the steel sheet in the pickling process. Also provided are a hot-band annealing method and a descaling method using the above equipment.

Abstract: A liquid crystal layer is disposed on a second glass substrate side between a first glass substrate and the second glass substrate, a first insulating film and a second insulating film are formed in this order on a surface of the first glass substrate on the liquid crystal layer side, the outer edge portion of the liquid crystal layer is surrounded by a sealing material, and a plurality of TFTs are insulated from each other by the first insulating film and the second insulating film. A gate insulating film included in the second insulating film is so formed as to have a higher barrier property for gas and/or liquid than the first insulating film, and a groove having a bottom formed with the same material as a part of the material for forming the TFT is formed at a part or the whole of a peripheral edge portion of the second insulating film which is located more inside than a position at which the second insulating film overlaps the sealing material.

Abstract: A liquid crystal layer is disposed on a second glass substrate side between a first glass substrate and the second glass substrate, a first insulating film and a second insulating film are formed in this order on a surface of the first glass substrate on the liquid crystal layer side, the outer edge portion of the liquid crystal layer is surrounded by a sealing material, and a plurality of TFTs are insulated from each other by the first insulating film and the second insulating film. A gate insulating film included in the second insulating film is so formed as to have a higher barrier property for gas and/or liquid than the first insulating film, and a groove having a bottom formed with the same material as a part of the material for forming the TFT is formed at a part or the whole of a peripheral edge portion of the second insulating film which is located more inside than a position at which the second insulating film overlaps the sealing material.