Patents by Inventor Takahiro Tan
Takahiro Tan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8133775Abstract: A semiconductor device has: a semiconductor substrate having a pair of current input/output regions via which current flows; an insulating film formed on the semiconductor substrate and having a gate electrode opening; and a mushroom gate electrode structure formed on the semiconductor substrate via the gate electrode opening, the mushroom gate electrode structure having a stem and a head formed on the stem, the stem having a limited size on the semiconductor substrate along a current direction and having a forward taper shape upwardly and monotonically increasing the size along the current direction, the head having a size expanded stepwise along the current direction, and the stem contacting the semiconductor substrate in the gate electrode opening and riding the insulating film near at a position of at least one of opposite ends of the stem along the current direction.Type: GrantFiled: January 6, 2011Date of Patent: March 13, 2012Assignees: Fujitsu Limited, Fujitsu Quantum Devices LimitedInventors: Kozo Makiyama, Naoya Ikechi, Takahiro Tan
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Publication number: 20110097886Abstract: A semiconductor device has: a semiconductor substrate having a pair of current input/output regions via which current flows; an insulating film formed on the semiconductor substrate and having a gate electrode opening; and a mushroom gate electrode structure formed on the semiconductor substrate via the gate electrode opening, the mushroom gate electrode structure having a stem and a head formed on the stem, the stem having a limited size on the semiconductor substrate along a current direction and having a forward taper shape upwardly and monotonically increasing the size along the current direction, the head having a size expanded stepwise along the current direction, and the stem contacting the semiconductor substrate in the gate electrode opening and riding the insulating film near at a position of at least one of opposite ends of the stem along the current direction.Type: ApplicationFiled: January 6, 2011Publication date: April 28, 2011Applicants: FUJITSU LIMITED, FUJITSU QUANTUM DEVICES LIMITEDInventors: Kozo Makiyama, Naoya IKECHI, Takahiro Tan
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Patent number: 7888193Abstract: A semiconductor device has: a semiconductor substrate having a pair of current input/output regions via which current flows; an insulating film formed on the semiconductor substrate and having a gate electrode opening; and a mushroom gate electrode structure formed on the semiconductor substrate via the gate electrode opening, the mushroom gate electrode structure having a stem and a head formed on the stem, the stem having a limited size on the semiconductor substrate along a current direction and having a forward taper shape upwardly and monotonically increasing the size along the current direction, the head having a size expanded stepwise along the current direction, and the stem contacting the semiconductor substrate in the gate electrode opening and riding the insulating film near at a position of at least one of opposite ends of the stem along the current direction.Type: GrantFiled: March 18, 2010Date of Patent: February 15, 2011Assignees: Fujitsu Limited, Fujitsu Quantum Devices LimitedInventors: Kozo Makiyama, Naoya Ikechi, Takahiro Tan
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Publication number: 20100173486Abstract: A semiconductor device has: a semiconductor substrate having a pair of current input/output regions via which current flows; an insulating film formed on the semiconductor substrate and having a gate electrode opening; and a mushroom gate electrode structure formed on the semiconductor substrate via the gate electrode opening, the mushroom gate electrode structure having a stem and a head formed on the stem, the stem having a limited size on the semiconductor substrate along a current direction and having a forward taper shape upwardly and monotonically increasing the size along the current direction, the head having a size expanded stepwise along the current direction, and the stem contacting the semiconductor substrate in the gate electrode opening and riding the insulating film near at a position of at least one of opposite ends of the stem along the current direction.Type: ApplicationFiled: March 18, 2010Publication date: July 8, 2010Applicants: FUJITSU LIMITED, FUJITSU QUANTUM DEVICES LIMITEDInventors: Kozo Makiyama, Naoya IKECHI, Takahiro Tan
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Patent number: 7709310Abstract: A semiconductor device has: a semiconductor substrate having a pair of current input/output regions via which current flows; an insulating film formed on the semiconductor substrate and having a gate electrode opening; and a mushroom gate electrode structure formed on the semiconductor substrate via the gate electrode opening, the mushroom gate electrode structure having a stem and a head formed on the stem, the stem having a limited size on the semiconductor substrate along a current direction and having a forward taper shape upwardly and monotonically increasing the size along the current direction, the head having a size expanded stepwise along the current direction, and the stem contacting the semiconductor substrate in the gate electrode opening and riding the insulating film near at a position of at least one of opposite ends of the stem along the current direction.Type: GrantFiled: December 28, 2007Date of Patent: May 4, 2010Assignees: Fujitsu Limited, Fujitsu Quantum Devices LimitedInventors: Kozo Markiyama, Naoya Ikechi, Takahiro Tan
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Publication number: 20080113499Abstract: A semiconductor device has: a semiconductor substrate having a pair of current input/output regions via which current flows; an insulating film formed on the semiconductor substrate and having a gate electrode opening; and a mushroom gate electrode structure formed on the semiconductor substrate via the gate electrode opening, the mushroom gate electrode structure having a stem and a head formed on the stem, the stem having a limited size on the semiconductor substrate along a current direction and having a forward taper shape upwardly and monotonically increasing the size along the current direction, the head having a size expanded stepwise along the current direction, and the stem contacting the semiconductor substrate in the gate electrode opening and riding the insulating film near at a position of at least one of opposite ends of the stem along the current direction.Type: ApplicationFiled: December 28, 2007Publication date: May 15, 2008Applicants: FUJITSU LIMITED, FUJITSU QUANTUM DEVICES LIMITEDInventors: Kozo Makiyama, Naoya Ikechi, Takahiro Tan
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Patent number: 7335542Abstract: A semiconductor device has: a semiconductor substrate having a pair of current input/output regions via which current flows; an insulating film formed on the semiconductor substrate and having a gate electrode opening; and a mushroom gate electrode structure formed on the semiconductor substrate via the gate electrode opening, the mushroom gate electrode structure having a stem and a head formed on the stem, the stem having a limited size on the semiconductor substrate along a current direction and having a forward taper shape upwardly and monotonically increasing the size along the current direction, the head having a size expanded stepwise along the current direction, and the stem contacting the semiconductor substrate in the gate electrode opening and riding the insulating film near at a position of at least one of opposite ends of the stem along the current direction.Type: GrantFiled: March 5, 2007Date of Patent: February 26, 2008Assignees: Fujitsu Limited, Fujitsu Quantum Devices LimitedInventors: Kozo Makiyama, Naoya Ikechi, Takahiro Tan
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Publication number: 20070161220Abstract: A semiconductor device has: a semiconductor substrate having a pair of current input/output regions via which current flows; an insulating film formed on the semiconductor substrate and having a gate electrode opening; and a mushroom gate electrode structure formed on the semiconductor substrate via the gate electrode opening, the mushroom gate electrode structure having a stem and a head formed on the stem, the stem having a limited size on the semiconductor substrate along a current direction and having a forward taper shape upwardly and monotonically increasing the size along the current direction, the head having a size expanded stepwise along the current direction, and the stem contacting the semiconductor substrate in the gate electrode opening and riding the insulating film near at a position of at least one of opposite ends of the stem along the current direction.Type: ApplicationFiled: March 5, 2007Publication date: July 12, 2007Applicants: FUJITSU LIMITED, FUJITSU QUANTUM DEVICES LIMITEDInventors: Kozo Makiyama, Naoya Ikechi, Takahiro Tan
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Patent number: 7223645Abstract: A semiconductor device has: a semiconductor substrate having a pair of current input/output regions via which current flows; an insulating film formed on the semiconductor substrate and having a gate electrode opening; and a mushroom gate electrode structure formed on the semiconductor substrate via the gate electrode opening, the mushroom gate electrode structure having a stem and a head formed on the stem, the stem having a limited size on the semiconductor substrate along a current direction and having a forward taper shape upwardly and monotonically increasing the size along the current direction, the head having a size expanded stepwise along the current direction, and the stem contacting the semiconductor substrate in the gate electrode opening and riding the insulating film near at a position of at least one of opposite ends of the stem along the current direction.Type: GrantFiled: February 2, 2004Date of Patent: May 29, 2007Assignees: Fujitsu Limited, Fujitsu Quantum Devices LimitedInventors: Kozo Makiyama, Naoya Ikechi, Takahiro Tan
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Publication number: 20040152289Abstract: A semiconductor device has: a semiconductor substrate having a pair of current input/output regions via which current flows; an insulating film formed on the semiconductor substrate and having a gate electrode opening; and a mushroom gate electrode structure formed on the semiconductor substrate via the gate electrode opening, the mushroom gate electrode structure having a stem and a head formed on the stem, the stem having a limited size on the semiconductor substrate along a current direction and having a forward taper shape upwardly and monotonically increasing the size along the current direction, the head having a size expanded stepwise along the current direction, and the stem contacting the semiconductor substrate in the gate electrode opening and riding the insulating film near at a position of at least one of opposite ends of the stem along the current direction.Type: ApplicationFiled: February 2, 2004Publication date: August 5, 2004Applicants: FUJITSU LIMITED, FUJITSU QUANTUM DEVICES LIMITEDInventors: Kozo Makiyama, Takahiro Tan
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Patent number: 6717271Abstract: A semiconductor device has: a semiconductor substrate having a pair of current input/output regions via which current flows; an insulating film formed on the semiconductor substrate and having a gate electrode opening; and a mushroom gate electrode structure formed on the semiconductor substrate via the gate electrode opening, the mushroom gate electrode structure having a stem and a head formed on the stem, the stem having a limited size on the semiconductor substrate along a current direction and having a forward taper shape upwardly and monotonically increasing the size along the current direction, the head having a size expanded stepwise along the current direction, and the stem contacting the semiconductor substrate in the gate electrode opening and riding the insulating film near at a position of at least one of opposite ends of the stem along the current direction.Type: GrantFiled: March 1, 2002Date of Patent: April 6, 2004Assignees: Fujitsu Limited, Fujitsu Quantum Devices LimitedInventors: Kozo Makiyama, Naoya Ikechi, Takahiro Tan
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Publication number: 20030025208Abstract: A semiconductor device has: a semiconductor substrate having a pair of current input/output regions via which current flows; an insulating film formed on the semiconductor substrate and having a gate electrode opening; and a mushroom gate electrode structure formed on the semiconductor substrate via the gate electrode opening, the mushroom gate electrode structure having a stem and a head formed on the stem, the stem having a limited size on the semiconductor substrate along a current direction and having a forward taper shape upwardly and monotonically increasing the size along the current direction, the head having a size expanded stepwise along the current direction, and the stem contacting the semiconductor substrate in the gate electrode opening and riding the insulating film near at a position of at least one of opposite ends of the stem along the current direction.Type: ApplicationFiled: March 1, 2002Publication date: February 6, 2003Applicant: Fujitsu LimitedInventors: Kozo Makiyama, Naoya Ikechi, Takahiro Tan