Abstract: A stroke simulator generates a reaction force in response to the operation of a brake pedal. The stroke simulator includes a stroke simulator housing, a stroke simulator piston, disposed slidably in the housing, which divides the interior of the stroke simulator housing into a first volumetric chamber and a second volumetric chamber, a stroke simulator spring, disposed in the second volumetric chamber, which generates a reaction force in response to the operation of the brake pedal by elastic deformation caused by the sliding of the stroke simulator piston, and a first supply port and a second supply port, provided for the first volumetric chamber and the second volumetric chamber, respectively, which are capable of supplying the operating oil pressure into the respective volumetric chambers when the brake pedal is operated.

Abstract: The inventive washing/drying machine is capable of cleaning water while performing a laundry process, and uses water filtered by a filter for dehumidification in a drying process, thereby achieving water saving.

Abstract: A highly reliable liquid crystal display device in which the drive circuit region is protected, which comprises a first substrate having thereon a display region and a drive circuit region comprising a drive circuit for controlling the display in said display region and a second substrate opposed to said first substrate, provided that said regions are partitioned by a sealing agent and that a liquid crystal material is incorporated between said first substrate and said second substrate opposed to the first one, wherein, said second substrate opposed to the first is extended to oppose both of said display region and said drive circuit region provided on the first substrate.

Abstract: An interface circuit is disclosed. When a USB-BUS power source voltage VBUS is not normally supplied to the substrate gates of PMOS transistors of switches of a first switching circuit which controls connecting a terminal D+/RXD to a terminal D?/TXD in an HS driver circuit, and to the substrate gates of PMOS transistors of switches of a second switching circuit which controls connecting the terminal D+/RXD to the terminal D?/TXD in an FS driver circuit 6; an amplified core circuit power source voltage DVDD is supplied to the substrate gates of the PMOS transistors. When the USB-BUS power source voltage VBUS is normally supplied to the substrate gates of the PMOS transistors, a USB stabilized power source voltage VUSB is supplied to the substrate gates of the PMOS transistors.

Abstract: A highly reliable liquid crystal display device in which the drive circuit region is protected, which comprises a first substrate having thereon a display region and a drive circuit region comprising a drive circuit for controlling the display in said display region and a second substrate opposed to said first substrate, provided that said regions are partitioned by a sealing agent and that a liquid crystal material is incorporated between said first substrate and said second substrate opposed to the first one, wherein, said second substrate opposed to the first is extended to oppose both of said display region and said drive circuit region provided on the first substrate.

Abstract: A highly reliable liquid crystal display device in which the drive circuit region is protected, which comprises a first substrate having thereon a display region and a drive circuit region comprising a drive circuit for controlling the display in said display region and a second substrate opposed to said first substrate, provided that said regions are partitioned by a sealing agent and that a liquid crystal material is incorporated between said first substrate and said second substrate opposed to the first one, wherein, said second substrate opposed to the first is extended to oppose both of said display region and said drive circuit region provided on the first substrate.

Abstract: There is provided an active matrix liquid crystal display having high reliability with improved yield of production. In an active matrix liquid crystal display in which peripheral driving circuits are in contact with a liquid crystal material, spacers are dispersed in peripheral driving circuit regions in a density lower than that in a pixel region to reduce damage to the peripheral driving circuits and to improve production yield and reliability of products.

Abstract: A highly reliable liquid crystal display device in which the drive circuit region is protected, which comprises a first substrate having thereon a display region and a drive circuit region comprising a drive circuit for controlling the display in said display region and a second substrate opposed to said first substrate, provided that said regions are partitioned by a sealing agent and that a liquid crystal material is incorporated between said first substrate and said second substrate opposed to the first one, wherein, said second substrate opposed to the first is extended to oppose both of said display region and said drive circuit region provided on the first substrate.

Abstract: A semiconductor input/output (I/O) circuit includes a first protection circuit connecting an analog power supply terminal with a digital power supply line and a digital ground line and a second protection circuit connecting an analog ground terminal with the digital power supply line and the digital ground line. An analog I/O terminal is provided between the analog power supply terminal and the analog ground terminal.

Abstract: There is provided an active matrix liquid crystal display having high reliability with improved yield of production.In an active matrix liquid crystal display in which peripheral driving circuits are in contact with a liquid crystal material, spacers are dispersed in peripheral driving circuit regions in a density lower than that in a pixel region to reduce damage to the peripheral driving circuits and to improve production yield and reliability of products.

Abstract: A method for producing a thin-film transistor (TFT) in which the gate electrode is offset from the source and drain without detriment to the characteristics of the device or to manufacturing yield, and a structure for such a TFT, are disclosed. A gate electrode is formed using a material capable of anodic oxidation, and a mask is formed on the gate electrode. Using a comparatively low voltage, a comparatively thick, porous anodic oxide film is formed on the sides of the gate electrode. The mask is then removed and using a comparatively high voltage a dense anodic oxide film is formed at least on the top of the gate electrode. Using the gate electrode having this anodic oxide on its top and sides as a mask, an impurity is introduced into the semiconductor film and an offset structure is obtained.

Abstract: A thin-film transistor (TFT) comprising an active region provided on a substrate and a gate electrode on the active region. A porous anodic oxide film is provided on the sides and top of the gate electrode where the lateral thickness of the anodic oxide provided on the side surface is larger than the vertical thickness of the anodic oxide provided on the top surface or where a first anodic oxide is provided on both the top and side surfaces and a second anodic oxide is provided on the side surfaces wherein the first anodic oxide is interposed between the second anodic oxide and the side surfaces of the gate electrode.

Abstract: A thin film transistor comprising a gate electrode offset from source and drain, which comprises a substrate having thereon a gate electrode fabricated on an active region provided on the substrate, wherein, an anodic oxide of the material constituting the gate electrode is provided on the side and the upper face of said gate electrode, and the anodic oxide on the side of the gate electrode is formed thicker than the anodic oxide formed on the upper face.

Abstract: A thin film transistor comprising a gate electrode offset from source and drain, which comprises a substrate having thereon a gate electrode fabricated on an active region provided on the substrate, wherein, an anodic oxide of the material constituting the gate electrode is provided on the side and the upper face of said gate electrode, and the anodic oxide on the side of the gate electrode is formed thicker than the anodic oxide formed on the upper face.

Abstract: A hot working material of corrosion resistant copper-based alloy having a metal composition of 61.0 weight percent to less than 63.0 weight percent copper, 1.0 weight percent to 3.5 weight percent lead, 0.7 weight percent to 1.2 weight percent tin, 0.2 weight percent to 0.7 weight percent nickel, 0.03 weight percent to 0.4 weight percent iron, 0.02 weight percent to 0.10 weight percent antimony, and 0.04 weight percent to 0.15 weight percent phosphorus, with the balance composed of zinc and inevitable accompanying impurities. The alloy is subjected to hot working and subsequent heat treatment at 500.degree. C. to 600.degree. C. for 30 minutes to 3 hours and sufficient that the alloy has an .alpha. single-phase structure and addition elements are dispersed uniformly in the entire structure.

Abstract: An IC temperature sensor has a reference voltage circuit for providing a reference voltages; a voltage comparing circuit provided with first and second input transistors constructed such that a ratio of sizes of emitters of the first and second input transistors is set to a predetermined ratio; a device for inputting outputs from the reference voltage circuit to the base of the input transistors; a device for providing a predetermined potential for the other input transistor; and a device for outputting a voltage signal proportional to temperature with the difference in size between the emitters of the input transistors.

Abstract: A distance measuring apparatus comprises a light emitting device for emitting infrared light blinking at a constant frequency toward an object, and a light receiving device for receiving infrared light reflected from the object. The light receiving device can generate two output signals which correspond respectively to positive and negative amounts of deviation of a position of light received therein with respect to a center thereof. The output signals are amplified by amplifiers, respectively. A signal component having a frequency corresponding to the blink frequency of the infrared light is picked up by a picking-up circuit from each of the output signals of the amplifiers. A distance determining device is provided to determine a distance to the object on the basis of the signal components. A gain control circuit for controlling gains of the amplifiers includes a pair of resistor circuits each having a changeable resistance for determining the gain of the corresponding amplifier.