Abstract: A method for producing a polytetrafluoroethylene powder, which includes subjecting tetrafluoroethylene to suspension polymerization in an aqueous medium to prepare a suspension-polymerized particle of non melt-processible polytetrafluoroethylene, drying the suspension-polymerized particle to prepare a dry particle, subjecting the dry particle to fluorine radical treatment to prepare a fluorine radical-treated particle, and crushing the fluorine radical-treated particle to produce a polytetrafluoroethylene powder. Also disclosed is a polytetrafluoroethylene formed article obtained by forming the polytetrafluoroethylene powder, as well as a polytetrafluoroethylene compression-molded article obtained by compression molding the polytetrafluoroethylene powder.

Abstract: A multistage centrifugal compressor capable of maintaining and improving efficiency while having a static flow path with a reduced outer diameter is provided. Each of return flow paths is provided with a plurality of return vanes disposed in a circular cascade form centered on a center line of a rotational shaft. Each of the return vanes is disposed as a leading vane (8A) and a trailing vane (8B). The trailing vanes are offset toward the pressure surface side of the leading vanes in a circumferential direction and provided so as to guide a flow from the pressure surface side of the leading vanes to negative pressure surfaces of the trailing vanes.

Abstract: A semiconductor laminate film includes a silicon substrate and a semiconductor layer formed on the silicon substrate and containing silicon and germanium. The semiconductor layer having a surface roughness Rms of 1 nm or less. Further, the semiconductor layer satisfies the following relationship t?0.881×x?4.79 where t represents a thickness (nm) of the semiconductor layer, and x represents a ratio of the number of germanium atoms to a sum of the number of silicon atoms and the number of germanium atoms in the semiconductor layer. Also, the semiconductor layer being a mixed crystal semiconductor layer containing silicon and germanium.

Abstract: A ferrule is formed with an optical fiber insertion hole into which an optical fiber is inserted, and includes a resin composition containing a thermoplastic resin and a filler, wherein a size of coarse particles originated from the filler is 50 ?m or less, or a size of aggregates originated from the filler is 50 ?m or less.

Abstract: An information processing device according to the present application includes a generation unit and a providing unit. The generation unit uses a model that is trained to learn a relationship between a criterion for classifying users of a first company and a criterion for classifying users of a second company to generate a criterion (common key) for classifying the users of the second company into a first category, from the criterion for classifying the users of the first company into the first category. The providing unit provides a criterion generated by the generation unit.

Abstract: A rotor and a shaft hole is located at a position in a rotor shaft within a range in an axial direction in which a rotor core is located, and a weir portion, the shaft hole, and a cooling medium discharge hole are located in this order from one side in the axial direction.

Abstract: Provided is a fullerene structure including: a column-shaped part; and a fin part projecting from the column-shaped part, in which both of the column-shaped part and the fin part are fullerenes. Provided is a method of manufacturing a fullerene structure including: heating a fullerene raw material to a sublimable temperature or higher under a non-oxidizing gas; and cooling an atmosphere in which the fullerene raw material is heated. In one example, the method includes supplying the non-oxidizing gas in one direction; heating the fullerene raw material to the sublimable temperature or higher at an upstream side of a supply direction of the non-oxidizing gas; and cooling the atmosphere in which the fullerene raw material is heated at a downstream side of the supply direction of the non-oxidizing gas.

Abstract: Provided is a fullerene structure including: a column-shaped part; and a fin part projecting from the column-shaped part, in which both of the column-shaped part and the fin part are fUllerenes. Provided is a method of manufacturing a fullerene structure including: heating a fullerene raw material to a sublimable temperature or higher under a non-oxidizing gas; and cooling an atmosphere in which the fullerene raw material is heated. In one example, the method includes supplying the non-oxidizing gas in one direction; heating the fullerene raw material to the sublimable temperature or higher at an upstream side of a supply direction of the non-oxidizing gas; and cooling the atmosphere in which the fullerene raw material is heated at a downstream side of the supply direction of the non-oxidizing gas.

Abstract: A method of producing a semiconductor laminate film includes forming a semiconductor layer containing silicon and germanium on a silicon substrate by a sputtering method. In the sputtering method, a film formation temperature of the semiconductor layer is less than 500° C., and a film formation pressure of the semiconductor layer ranges from 1 mTorr to 11 mTorr, or, a film formation temperature of the semiconductor layer is less than 600° C., and a film formation pressure of the semiconductor layer is equal to or more than 2 mTorr and less than 5 mTorr. The sputtering method uses a sputtering gas having a volume ratio of a hydrogen gas of less than 0.1%, and the semiconductor layer satisfies a relationship of t?0.881×x?4.79, where t represents a thickness (nm) of the semiconductor layer, and x represents a ratio of the number of germanium atoms to a sum of the number of silicon atoms and the number of germanium atoms in the semiconductor layer.

Abstract: A semiconductor laminate film includes a silicon substrate and a semiconductor layer formed on the silicon substrate and containing silicon and germanium. The semiconductor layer having a surface roughness Rms of 1 nm or less. Further, the semiconductor layer satisfies the following relationship t?0.881×x?4.79 where t represents a thickness (nm) of the semiconductor layer, and x represents a ratio of the number of germanium atoms to a sum of the number of silicon atoms and the number of germanium atoms in the semiconductor layer. Also, the semiconductor layer being a mixed crystal semiconductor layer containing silicon and germanium.

Abstract: An apparatus and method accurately measures an amount of overlap in joining together the end portions of a sheet-shaped member constituting a tire. The overlap amount of the sheet-shaped member front and rear ends is measured when the sheet-shaped member having been molded into a predetermined length with molding marks extending on the surface in width direction is wound around the periphery of a molding drum from the front end. In doing so, a detector detects a first molding mark formed on the sheet-shaped member on the rear end side and a second molding mark formed on the sheet-shaped member on the front end side by capturing images of an entire area including the overlap from above by an image capturing device. A calculator calculates the amount of overlap by measuring the distance between the first and second molding marks on the sheet-shaped member from the frames of captured images.

Abstract: A panel body (1) according to the present invention includes a cushioning layer (51) that contains a fibrous base material (2A) and a cushioning layer (52) that contains a fibrous base material (2B). The first cushioning layer (51) and the second cushioning layer (52) respectively include heat-joining layers (10 and 12) which contain base materials (2A and 2B) and joining materials having lower melting points than the base materials (2A and 2B), and surface layers (20 and 22) which are bonded to surfaces of the heat-joining layers (10 and 12) and are formed of the base materials (2A and 2B).

Abstract: A method of producing a semiconductor laminate film includes forming a semiconductor layer containing silicon and germanium on a silicon substrate by a sputtering method. In the sputtering method, a film formation temperature of the semiconductor layer is less than 500° C., and a film formation pressure of the semiconductor layer ranges from 1 mTorr to 11 mTorr, or, a film formation temperature of the semiconductor layer is less than 600° C., and a film formation pressure of the semiconductor layer is equal to or more than 2 mTorr and less than 5 mTorr. The sputtering method uses a sputtering gas having a volume ratio of a hydrogen gas of less than 0.1%, and the semiconductor layer satisfies a relationship of t?0.881×x?4.79, where t represents a thickness (nm) of the semiconductor layer, and x represents a ratio of the number of germanium atoms to a sum of the number of silicon atoms and the number of germanium atoms in the semiconductor layer.

Abstract: An apparatus and method accurately measures an amount of overlap in joining together the end portions of a sheet-shaped member constituting a tire. The overlap amount of the sheet-shaped member front and rear ends is measured when the sheet-shaped member having been molded into a predetermined length with molding marks extending on the surface in width direction is wound around the periphery of a molding drum from the front end. In doing so, a detector detects a first molding mark formed on the sheet-shaped member on the rear end side and a second molding mark formed on the sheet-shaped member on the front end side by capturing images of an entire area including the overlap from above by an image capturing device. A calculator calculates the amount of overlap by measuring the distance between the first and second molding marks on the sheet-shaped member from the frames of captured images.

Abstract: In an expansion sheet for a rotary electric machine that has a thermal expansion property and is to be arranged between a core and a coil conductor in a slot in the rotary electric machine, in which the coil conductor is housed in the slot formed in the core, the expansion sheet has a first surface and a second surface and includes: a first surface-side portion; and a second surface-side portion that is closer to the second surface than the first surface-side portion. An amount of volume increase, caused by heating, of the first surface-side portion is higher than an amount of volume increase, caused by the heating, of the second surface-side portion.

Abstract: In an expansion sheet for a rotary electric machine that has a thermal expansion property and is to be arranged between a core and a coil conductor in a slot in the rotary electric machine, in which the coil conductor is housed in the slot formed in the core, the expansion sheet has a first surface and a second surface and includes: a first surface-side portion; and a second surface-side portion that is closer to the second surface than the first surface-side portion, wherein an amount of volume increase, caused by heating, of the first surface-side portion is higher than an amount of volume increase, caused by the heating, of the second surface-side portion.

Abstract: There is provided a content distribution system configured by a distribution apparatus for storing content data, a display apparatus for displaying content data distributed from the distribution apparatus in accordance with a predetermined display schedule, and a user terminal for acquiring the content data displayed on the display apparatus from the distribution apparatus. The user terminal receives data of a display schedule from the display apparatus, and requests the distribution apparatus to send data of content identified from the display schedule.

Abstract: There is provided a content distribution system configured by a distribution apparatus for storing content data, a display apparatus for displaying content data distributed from the distribution apparatus in accordance with a predetermined display schedule, and a user terminal for acquiring the content data displayed on the display apparatus from the distribution apparatus. The user terminal receives data of a display schedule from the display apparatus, and requests the distribution apparatus to send data of content identified from the display schedule.

Abstract: A communication system having first and second communication apparatuses, and communicates a communication frame obtained by time-division multiplexing a plurality of communication data, wherein the communication apparatus: receives first and second communication data; recognizes whether the first or second communication data is received; assembles a time-division multiplexed first communication frame using the communication data to add information indicating a format of the first communication frame to the first communication frame on the basis of a recognition result; and transmits the first communication frame assembled to the second communication apparatus, and the second communication apparatus receives the first communication frame transmitted; checks the format of the first communication frame on the basis of the information added to the first communication frame; and acquires the communication data from the first communication frame, on the basis of a checking result.

Abstract: When a request to transfer real-time data is generated during transfer of non-real-time data, the transfer of the non-real-time data is interrupted, and transfer of a real-time data frame is inserted. Thereafter, the remaining non-real-time data is continuously transferred. The length of each communication frame generated by dividing the first type of data into a plurality of data and using the divided data is determined depending on whether the second type of data is communicated.