Abstract: A method for manufacturing a stator configured to ensure insulation properties between a conductor and an armature core while preventing a manufacturing cost from increasing and preventing a space factor from lowering. In an edge-removing step, a plurality of independent edge-removing punches, which correspond to one slot S or two or more slots S, press and chamfer a corner portion of an axial opening edge of the slot in an axial end core sheet of the armature core.

Abstract: A print job is submitted from a client terminal 100 to two print servers 200?1, 200?2, a print server taking main charge 200?1 instructs a printer 300 to print one page at a time in sequence, and status information indicating the printing state is shared by the two print servers 200?1, 200?2. If a failure occurs in the print server taking main charge 200?1, then, on the basis of the status information shared by the two print servers 200?1, 200?2, a print server taking sub charge 200?2 instructs the printer 300 to print in accordance with the submitted print job from the unprinted page. This makes it possible to immediately continue the print from the page indicated to be completely printed when the failure occurred.

Abstract: A print job is submitted from a client terminal 100 to two print servers 200-1, 200-2, a print server taking main charge 200-1 instructs a printer 300 to print one page at a time in sequence, and status information indicating the printing state is shared by the two print servers 200-1, 200-2. If a failure occurs in the print server taking main charge 200-1, then, on the basis of the status information shared by the two print servers 200-1, 200-2, a print server taking sub charge 200-2 instructs the printer 300 to print in accordance with the submitted print job from the unprinted page. This makes it possible to immediately continue the print from the page indicated to be completely printed when the failure occurred.

Abstract: A method of manufacturing a semiconductor element includes a first step of epitaxially growing an AlN layer on a substrate, a second step of forming a buffer layer on the AlN layer by epitaxially growing AlxGayInzN where x, y, and z satisfy x+y+z=1 and y is not zero without adding Fe, a third step of forming a resistance layer on the buffer layer by epitaxially growing AlxGayInzN where x, y, and z satisfy x+y+z=1 and y is not zero while adding Fe, a step of epitaxially growing a channel layer on the resistance layer, a step of epitaxially growing an electron supply layer above the channel layer, and a step of forming an electrode above the electron supply layer.

Abstract: A degradation diagnosis system includes: a feature amount calculator and a diagnoser. The calculator reads a relation between: a ratio between a variation of a voltage of a secondary battery and a variation of an electric charge of the secondary battery; and the voltage or the electric charge of the secondary battery. The calculator identifies the voltage or the electric charge whose relation with the ratio satisfies a predefined condition and calculates a feature amount of the secondary battery. The diagnoser diagnoses degradation of the secondary battery, based on the feature amount. The calculator calculates the feature amount, based on a relation between: an integrated value within a range where a voltage or an electric charge is larger than the identified voltage or electric charge; and an integrated value within a range where the voltage or the electric charge is smaller, in a curve represented by the relational data.

Abstract: According to one embodiment, there is provided a battery apparatus including a battery management device configured to receive voltages and temperatures of cells, and detection data of a current sensor, and a measuring computer configured to calculate a characteristic value of each cell or cell module, based on the detection data acquired from the battery management device at first time intervals, and to send, the acquired detection data or the calculated characteristic value to a control device at second time intervals which are longer than the first time intervals.

Abstract: A storage battery includes power storage devices in series and switching circuits each arranged between adjacent power storage devices. Each switching circuit includes an input terminal I, an output terminal O, an input terminal Si, and an output terminal So, a first switch that electrically connects the input terminal Si and the output terminal O, a second switch that electrically connects the input terminal I and the output terminal So, a third switch that electrically connects the input terminal I and the output terminal O, and a fourth switch that electrically connects the input terminal Si and the output terminal So. The input terminal Si is electrically connected to the output terminal So of one of adjacent switching circuits and the output terminal So is electrically connected to the input terminal Si of the other of the adjacent switching circuits.

Abstract: A manufacturing method of a high electron mobility transistor includes: forming a GaN channel layer on a semi-insulating substrate in a first growth condition; forming a transition layer on the GaN channel layer while the first growth condition is changed to a second growth condition; and forming an AlGaN electron supply layer on the transition layer in the second growth condition, wherein the GaN channel layer, the transition layer, and the AlGaN electron supply layer are continuously formed without interrupting growth.

Abstract: A method for manufacturing a semiconductor device includes: preparing a Si substrate having a flat portion with flat front and back surfaces and a bevel portion located at a periphery of the flat portion; forming a III-V nitride semiconductor film on the front surface of the Si substrate by epitaxial growth; and after forming the III-V nitride semiconductor film, grinding the Si substrate from the back surface. Amounts of working at the bevel portion on the front surface and the back surface of an outermost end portion of the bevel portion are asymmetrical. A first thickness measured from the front surface of the flat portion to the outermost end portion is smaller than a second thickness measured from the back surface of the flat portion to the outermost end portion.

Abstract: A measuring apparatus includes a light projecting and receiving device configured to project and receive light, and measures an object based on the projected and received light. The measuring apparatus comprises a chamber configured to enclose a first space for accommodating the object; a partition configured to separate the first space from a second space which accommodates the light projecting and receiving device, and configured to transmit the light; a first regulator configured to regulate temperature of the first space to a first temperature by flowing a gas through the first space; and a second regulator configured to regulate temperature of the second space to a second temperature different from the first temperature by flowing a gas through the second space. The partition includes a plurality of partition walls disposed with a gap.

Abstract: A storage battery evaluating apparatus according to an embodiment includes a determiner, a corrector, a QV curve generator, an evaluator, and a feedbacker. The determiner determines a charging/discharging tendency of a storage battery based on measurement data including voltage data. The corrector corrects the voltage data based on a correction parameter. The correction parameter corresponds to at least one of the charging/discharging tendency and a degraded state of the storage battery. The QV curve generator generates a QV curve of the storage battery based on the voltage data which has been corrected. The evaluator evaluates the degraded state based on the QV curve. The feedbacker feeds back, to the corrector, the corrected parameter corresponding to the degraded state.

Abstract: A print job is submitted from a client terminal 100 to two print servers 200?1, 200?2, a print server taking main charge 200?1 instructs a printer 300 to print one page at a time in sequence, and status information indicating the printing state is shared by the two print servers 200?1, 200?2. If a failure occurs in the print server taking main charge 200?1, then, on the basis of the status information shared by the two print servers 200?1, 200?2, a print server taking sub charge 200?2 instructs the printer 300 to print in accordance with the submitted print job from the unprinted page. This makes it possible to immediately continue the print from the page indicated to be completely printed when the failure occurred.

Abstract: A manufacturing method of a high electron mobility transistor includes: forming a GaN channel layer on a semi-insulating substrate in a first growth condition; forming a transition layer on the GaN channel layer while the first growth condition is changed to a second growth condition; and forming an AlGaN electron supply layer on the transition layer in the second growth condition, wherein the GaN channel layer, the transition layer, and the AlGaN electron supply layer are continuously formed without interrupting growth.

Abstract: The present invention provides a measurement apparatus for measuring a shape of a test surface, comprising an optical system configured to irradiate a measurement point on the test surface and a reference surface with light, and cause test light and reference light reflected to interfere with each other, a detector configured to detect an optical path length difference between the test light and the reference light by using interfering light and a processor configured to determine a position of the measurement point based on a plurality of detection results by the detector, wherein a detection result includes an error which cyclically changes, and the plurality of detection results include n detection results obtained in n states in which optical path lengths of the test light are different from each other by 1/n (n?2) of a cycle of the error.

Abstract: An imaging apparatus disclosed herein includes: a solid-state imaging device in which pixels are arranged in a matrix; a mechanical shutter; and a signal processing unit, wherein the signal processing unit: resets charge stored in all the pixels by closing the mechanical shutter and applying a voltage V2 to a photoelectric conversion unit; starts first exposure by opening the mechanical shutter and applying a voltage V1 to the photoelectric conversion unit; finishes the first exposure by applying the voltage V2 to the photoelectric conversion unit with the mechanical shutter open; reads pixel signals to obtain a first still image; resets all the pixels; starts second exposure by applying the voltage V1 to the photoelectric conversion unit with the mechanical shutter open; finishes the second exposure by applying the voltage V2 to the photoelectric conversion unit with the mechanical shutter open; reads pixel signals to obtain a second still image.

Abstract: A liquid crystal composition for forming a polymer/liquid crystal composite in which disorder of an orientation state is reduced is provided. The liquid crystal composition includes a liquid crystal material exhibiting a blue phase and a liquid crystalline monomer represented by the following general formula (G1). Note that the liquid crystal composition may include a non-liquid-crystalline monomer and a polymerization initiator. In the general formula (G1), X represents a mesogenic skeleton; and Y1 and Y2 individually represent an alkylene group having a sum of carbon atoms and/or oxygen atoms of 1 to 20. Also in the general formula (G1), the alkylene group and the alkyl group may include a carbonyl group and may have an ether bond. In addition, the carbonyl group and the ether bond may form an ester structure. In the general formula (G1), Z1 and Z2 individually represent an acryloyl group or a methacryloyl group.

Abstract: A method of manufacturing a semiconductor element includes a first step of epitaxially growing an AlN layer on a substrate, a second step of forming a buffer layer on the AlN layer by epitaxially growing AlxGayInzN where x, y, and z satisfy x+y+z=1 and y is not zero without adding Fe, a third step of forming a resistance layer on the buffer layer by epitaxially growing AlxGayInzN where x, y, and z satisfy x+y+z=1 and y is not zero while adding Fe, a step of epitaxially growing a channel layer on the resistance layer, a step of epitaxially growing an electron supply layer above the channel layer, and a step of forming an electrode above the electron supply layer.

Abstract: A solid-state imaging device including pixels, each pixel having a reset transistor, a selection transistor, an amplification transistor, and a photoelectric conversion unit. The photoelectric conversion unit has a photoelectric conversion film which performs photoelectric conversion, a pixel electrode formed on the surface of the photoelectric conversion film that faces the semiconductor substrate, and a transparent electrode formed on the surface of the photoelectric conversion film that is opposite to the pixel electrode, and the amplitude of a row reset signal applied to the gate of the reset transistor is smaller than at least one of (a) the maximum voltage applied to the drain of the amplification transistor, (b) the maximum voltage applied to the gate of the selection transistor, (c) the power source voltage applied to an inverting amplifier, and (d) the maximum voltage applied to a transparent electrode.

Abstract: A novel polymerizable monomer compound that can be used for a variety of liquid crystal devices is provided. Particularly, a novel liquid crystal composition including the novel polymerizable monomer compound and exhibiting a blue phase is provided. Further, a liquid crystal display device manufactured with the use of the liquid crystal composition is provided. A polymerizable monomer compound represented by the following general formula (G1) is provided. In the general formula (G1), n and m are individually an integer from 1 to 20 and may be the same as or different from each other, and R1 and R2 individually represent hydrogen or a methyl group.

Abstract: A method for manufacturing a silicon carbide semiconductor device includes: preparing a silicon carbide single crystal substrate having a flatness with an average roughness of 0.2 nm or less; gas-etching a surface of the silicon carbide single crystal substrate under an atmosphere of a reducing gas; and forming a silicon carbide layer on the gas-etched surface of the silicon carbide single crystal substrate, wherein an etching rate of the gas etching is made in a range of 0.5 ?m/hour or faster to 2.0 ?m/hour or slower.