Abstract: A parallel flat plate type plasma etching equipment can supply RF to both the upper electrode 14 and the lower electrode 18. In the plasma etching equipment a metal plate 31 having a ground potential, and having a plurality of openings H in the range of a predetermined area is installed between the upper electrode 14 and the wafer 16 placed on the lower electrode 18. A plasma etching equipment comprises a lower electrode supplied with a high-frequency power and a microwave-introducing window in the location facing said lower electrode. In the plasma etching equipment a metal plate 32 has a ground potential, and has a plurality of openings H in the range of a predetermined area. The metal plate 32 is installed between the microwave-introducing window 26 and the wafer 16 placed on the lower electrode 18.

Abstract: A plasma processing apparatus carries out plasma processings such as etching, ashing and CVD on large substrates such as semiconductor device substrates and glass substrates for liquid crystal display panels, etc. The plasma processing apparatus having microwave generator 26, a microwave guide path 23, a microwave window 4 and a reaction room 2, etc., has a dielectric sheet 21 disposed to confront the microwave window 4 through a hollow area 20. The dielectric sheet is divided into multiple dielectric sheets 21a, 21b, and the microwave guide path 23a, 23b are connected to the divided dielectric sheets 21a, 21b. This simple structure enables the stable and uniform plasma processing on large substrates such as glass substrates for liquid crystal display panels.

Abstract: A plasma processing apparatus comprises means of supplying the microwave, a reaction chamber having a microwave lead-in opening, a microwave window for introducing the microwave provided by the microwave supply means into the reaction chamber through the microwave lead-in opening, and a supporting member having beams for supporting the microwave window. The apparatus has its microwave window divided in correspondence to areas of the supporting member divided by the beams. The apparatus can have a larger microwave window which is reinforced by the beams against the pressure at plasma generation, and is capable of processing large semiconductor substrates and glass substrates for liquid crystal display panels stably and uniformly.