Abstract: A method of manufacturing a semiconductor device includes: forming a first pad and a second pad over a substrate; forming a first insulating film over the second pad without forming the first insulating film over the first pad; forming a metal film over the first pad and the second pad; forming an electrode over the first pad with the metal film interposed therebetween; selectively removing the metal film over the second pad; and removing the first insulating film over the second pad.

Abstract: A method of manufacturing a semiconductor device includes: forming a first pad and a second pad over a substrate; forming a first insulating film over the second pad without forming the first insulating film over the first pad; forming a metal film over the first pad and the second pad; forming an electrode over the first pad with the metal film interposed therebetween; selectively removing the metal film over the second pad; and removing the first insulating film over the second pad.

Abstract: A semiconductor device according to the present invention comprises a substrate; a copper interconnect layer formed on the top surface side of the substrate; an aluminum bonding pad formed on the top surface side of the copper interconnect layer with an aluminum-based material; and an aluminum interconnect formed on the top surface side of the copper interconnect layer with an aluminum-based material.

Abstract: A connection via hole is formed in an inter layer insulation film that covers a copper pad. Copper is formed within the connection via hole to form a connection copper via metal. An aluminum pad having a barrier metal thereunder for preventing reaction between copper and aluminum is formed on the connection copper via metal, thereby electrically connecting the copper pad and the aluminum pad to each other through the connection copper via metal. A step formed by the connection via hole that is formed in the inter layer insulation film is made substantially equal to zero with the aid of the connection copper via metal and at the same time, a film thickness of aluminum constituting the aluminum pad is reduced, thereby reducing manufacturing cost of the semiconductor device.

Abstract: A connection via hole is formed in an inter layer insulation film that covers a copper pad. Copper is formed within the connection via hole to form a connection copper via metal. An aluminum pad having a barrier metal thereunder for preventing reaction between copper and aluminum is formed on the connection copper via metal, thereby electrically connecting the copper pad and the aluminum pad to each other through the connection copper via metal. A step formed by the connection via hole that is formed in the inter layer insulation film is made substantially equal to zero with the aid of the connection copper via metal and at the same time, a film thickness of aluminum constituting the aluminum pad is reduced, thereby reducing manufacturing cost of the semiconductor device.

Abstract: A semiconductor device according to the present invention comprises a substrate; a copper interconnect layer formed on the top surface side of the substrate; an aluminum bonding pad formed on the top surface side of the copper interconnect layer with an aluminum-based material; and an aluminum interconnect formed on the top surface side of the copper interconnect layer with an aluminum-based material.