Abstract: Positional information (an estimate value in which a linear component of positional deviation amount is corrected) of each shot on a wafer is calculated by a statistical computation using actual measurement values of positional information of a plurality of sample shots on the wafer (step 488). And, a variation amount of a non-linear component of positional deviation amount is calculated at predetermined intervals with respect to each of a plurality of measurement shots including the sample shots (step 496), and judgment is made about the necessity of update of correction information based on magnitude of the calculated variation amount of a non-linear component of each measurement shot area (step 498). Therefore, comparing with the case when actual values of positional information of all shots on the wafer are obtained at least once in each lot in order to update a correction value, the number of shots subject to positional information measurement and the measurement time can be reduced without fail.

Abstract: An exposure apparatus that exposes a substrate is provided, the exposure apparatus comprising a first exposure system that drives a movable component which holds the substrate, and that, using patterned first exposure light, exposes a first shot area where a chip which is used to create a device can be formed on the substrate; and a second exposure system that comprises a holding component which is different from the movable component and is able to hold the substrate, and that, while relative movement between the substrate and patterned second exposure light, exposes a second shot area where the chip is not to be formed on the substrate using the second exposure light.

Abstract: Positional information (an estimate value in which a linear component of positional deviation amount is corrected) of each shot on a wafer is calculated by a statistical computation using actual measurement values of positional information of a plurality of sample shots on the wafer (step 488). And, a variation amount of a non-linear component of positional deviation amount is calculated at predetermined intervals with respect to each of a plurality of measurement shots including the sample shots (step 496), and judgment is made about the necessity of update of correction information based on magnitude of the calculated variation amount of a non-linear component of each measurement shot area (step 498). Therefore, comparing with the case when actual values of positional information of all shots on the wafer are obtained at least once in each lot in order to update a correction value, the number of shots subject to positional information measurement and the measurement time can be reduced without fail.

Abstract: A main controller sets an exposure control target value according to the transmittance of an optical system measured by means of a sensor prior to exposure or estimated by predetermined calculation, and exposure is controlled according to the set exposure control target value while a reticle pattern is being transferred onto a wafer through the optical system. Since the exposure energy provided to the image surface changes in a unit time per unit area in accordance with the transmittance of the optical system, the exposure control target value is set according to the transmittance of the optical system, and exposure is controlled according to the set control target value. Thus, exposure with a high precision is achieved without being influenced by the variation of the transmittance.

Abstract: For a wafer earlier than a n'th wafer (n≧2) in a lot, a method (and an apparatus) of this invention detects positions of all shot areas, separates a nonlinear component and linear component of each of position deviation amounts, evaluates nonlinear distortion of the wafer based on the position deviation amounts and an evaluation function, and calculates nonlinear components of the position deviation amounts of all shot areas according to a complement function determined based on the evaluation results. On the other hand, for the n'th or later wafer, the method (and the apparatus) calculates position coordinates, of all shot areas, having linear components of position deviation amounts thereof corrected by using EGA, and detects positions of the shot areas based on the position coordinates having linear components thereof corrected and the nonlinear components calculated in the above.

Abstract: For a wafer earlier than a n'th wafer (n>2) in a lot, a method (and an apparatus) of this invention detects positions of all shot areas, separates a nonlinear component and linear component of each of position deviation amounts, evaluates nonlinear distortion of the wafer based on the position deviation amounts and an evaluation function, and calculates nonlinear components of the position deviation amounts of all shot areas according to a complement function determined based on the evaluation results. On the other hand, for the n'th or later wafer, the method (and the apparatus) calculates position coordinates, of all shot areas, having linear components of position deviation amounts thereof corrected by using EGA, and detects positions of the shot areas based on the position coordinates having linear components thereof corrected and the nonlinear components calculated in the above.