Abstract: Is provided a resonant cavity type light emitting diode having excellent humidity durability and a light output unsaturated even several 10 mA., which is suitable for mass production. The semiconductor light emitting element has a resonator formed by one set of multi-layer reflecting films disposed at a constant distance on a GaAs substrate inclined at an angle of not less than 2 degrees in the direction [011] or [0-1-1] from the plane (100) and a light emitting layer disposed at a loop position of a standing wave in the resonator, wherein a multi-layer reflecting film disposed on the GaAs substrate side is composed of plural layers of AlxGa1-xAs (0 ≦x≦1) and a multi-layer reflecting film disposed on the opposite side of the GaAs substrate is composed of plural layers of AlyGazIn1-y-zP (0≦y≦1, 0≦z≦1), thereby achieving an improved humidity durability and an increased reflection factor by increasing the number of the reflection layers.

Abstract: An n-type AlAs/n-type Al0.5Ga0.5As DBR layer and a p-type (Al0.2Ga0.8)0.5In0.5P/p-type Al0.5In0.5P DBR layer are formed on an n-type GaAs substrate at specified intervals so that a reflection spectrum is centered at 650 nm and the resonance wavelength becomes 650 nm. A quantum well active layer (light-emitting layer) is formed so that the light emission peak wavelength becomes 650 nm in the belly position of the standing wave generated in a resonator constructed of both the DBR layers. A grating pattern is formed on the surface of a p-type Al0.5Ga0.5As light diffusion layer that serves as a light-emitting surface surrounded by a p-type electrode. By thus roughening the light-emitting surface, light emitted from the light-emitting layer is diffused in various directions, reducing the radiation angle dependency of the emission light wavelength.

Abstract: A semiconductor light-emitting device exhibits high reflectance even with less number of pairs of light-reflecting layers, and allows light emitted from the active layer to be effectively extracted outside. This semiconductor light-emitting device is fabricated at good mass productivity by a semiconductor light-emitting device manufacturing method including the step of providing an active layer which generates light having a specified wavelength on a semiconductor substrate. On the semiconductor substrate, are stacked an AlxGa1−xAs layer and the active layer, in this order. Part of the AlxGa1−xAs layer with respect to the is changed into an AlOy layer (where y is a positive real number).

Abstract: In a semiconductor light-emitting element, a first DBR and a second DBR, with a specified spacing left between them, form a resonator, and a single quantum well active layer is positioned at the loop of a standing wave within this resonator. The single quantum well active layer is composed of a Ga0.5In0.5P well layer and a pair of (Al0.5Ga0.5)0.5In0.5P barrier layers, which sandwiches the Ga0.5In0.5P well layer therebetween. The impurity concentration of the (Al0.5Ga0.5)0.5In0.5P barrier layers is higher than that of the Ga0.5In0.5P well layer. For example, the impurity concentration of the Ga0.5In0.5P well layer is set to 2×1016 cm−3, while the impurity concentration of the (Al0.5Ga0.5)0.5In0.5P barrier layers is set to 2×1018 cm−3.

Abstract: A light emitting layer 4 composed of a single or a plurality of semiconductor layers is laminated on a nondope type, weak p-type, or n-type first semiconductor substrate (not shown in FIG. 1). On the light emitting layer 4, n-type semiconductor layers 5-7 composed of a single layer or a plurality of layers are laminated. On the surface of the n-type semiconductor layer 7, a second semiconductor substrate 8 transparent to the wavelength of emitted light from the light emitting layer 4 is formed. Then, the first semiconductor substrate is removed. On the plane exposed by removal of the first semiconductor substrate, a translucent electrode layer 9 transparent to the wavelength of emitted light from the light emitting layer is formed.

Abstract: A light emitting diode having, at least, an AlGaInP light emitting layer and a transparent electrode, wherein the transparent electrode is made of a ZnO film doped with a group III element or a compound thereof.

Abstract: A resonant cavity type light emitting diode has a first DBR made of n-type AlAs or Al0.5Ga0.5As, a quantum well active layer, a second DBR made of p-type (Al0.2Ga0.8)0.5In0.5P or Al0.5In0.5P, and an n-type current constriction layer on an n-type GaAs substrate. The first DBR and the second DBR form a resonator. The quantum well active layer is formed in a position of an antinode of a standing wave inside the resonator. Between the second DBR and the current constriction layer, there is provided a p-type GaP etching protection layer that has a value obtained by dividing resistivity by thickness being 1×103 &OHgr; or more. Since a current in a current flow pass formed in the current constriction layer hardly diffuses to the outside of the current flow pass, there is generated few region with low current density that causes deterioration of response speed in a quantum well layer. Thus, the light emitting diode has an excellent high-speed response.

Abstract: A light emitting diode (LED) of a double hetero-junction type has a light-emitting layer of a GaAlInP material, a p-type cladding layer and an n-type cladding layer sandwiching the light-emitting layer therebetween, a p-side electrode formed on the p-type cladding layer side, and an n-side electrode formed on the n-type cladding layer side. The p-type cladding layer consists of a first p-type cladding layer positioned closer to the light-emitting layer and having a lower aluminum content and a lower impurity concentration, and a second p-type cladding layer positioned less closer to the light-emitting layer and having a higher aluminum content and a higher impurity concentration. The LED also has a current blocking layer below the p-side electrode for locally blocking electric current flowing from the p-side electrode to the n-side electrode.

Abstract: In a semiconductor light-emitting element, a first DBR and a second DBR, with a specified spacing left between them, form a resonator, and a single quantum well active layer is positioned at the loop of a standing wave within this resonator. The single quantum well active layer is composed of a Ga0.5In0.5P well layer and a pair of (Al0.5Ga0.5)0.5In0.5P barrier layers, which sandwiches the Ga0.5In0.5P well layer therebetween. The impurity concentration of the (Al0.5Ga0.5)0.5In0.5P barrier layers is higher than that of the Ga0.5In0.5P well layer. For example, the impurity concentration of the Ga0.5In0.5P well layer is set to 2×1016 cm−3, while the impurity concentration of the (Al0.5Ga0.5)0.5In0.5P barrier layers is set to 2×1018 cm−3.

Abstract: A light emitting diode (LED) of a double hetero-junction type has a light-emitting layer of a GaAlInP material, a p-type cladding layer and an n-type cladding layer sandwiching the light-emitting layer therebetween, a p-side electrode formed on the p-type cladding layer side, and an n-side electrode formed on the n-type cladding layer side. The p-type cladding layer consists of a first p-type cladding layer positioned closer to the light-emitting layer and having a lower aluminum content and a lower impurity concentration, and a second p-type cladding layer positioned less closer to the light-emitting layer and having a higher aluminum content and a higher impurity concentration. The LED also has a current blocking layer below the p-side electrode for locally blocking electric current flowing from the p-side electrode to the n-side electrode.

Abstract: The present invention relates to a semiconductor light-emitting device used for optical transmission (particularly for IEEE 1394) and displays and the like. More specifically, an object of the present invention is to provide a semiconductor light-emitting device capable of emitting the light with a high efficiency by extending a distance from an active layer to a boundary having poor crystal quality due to Group V elements As and P exchange to suppress deterioration in crystal quality of the active layer.

Abstract: A light-emitting diode having an excellent high-speed response characteristic and capable of giving a large light output with a small variation of the light output during the operation is provided. In the light-emitting diode, an active layer comprising a single quantum well layer of p-type Ga0.51In0.49P, a lower barrier layer of p-type (Al0.5Ga0.5)0.51In0.49P and an upper barrier layer of p-type (Al0.5Ga0.5)0.51In0.49P is highly doped with p-type dopant (Zn, Mg, Be, C) or n-type dopant (Si, Se, Te) to produce non-radiative recombination level in the upper and lower barrier layers. Carriers injected into the quantum well layer not only recombine radiatively therein and also recombine nonradiatively at boundaries of the upper barrier layer and the lower barrier layer, remarkably increasing recombination velocity of carriers and dramatically improving the response characteristic.

Abstract: A semiconductor light emitting device has in sequence on a semiconductor substrate, a multilayer reflection film, a semiconductor layer, and a quantum well active layer. A distance between an upper surface of the multilayer reflection film and a lower surface of the quantum well active layer is 2&lgr;/n or less, where &lgr; is a light emission wavelength and n is an average refractive index of the semiconductor layer disposed in between the multilayer reflection film and the quantum well active layer. A phase difference between a reflected ray of light reflected by the multilayer reflection film and an emitted ray of light from the quantum well active layer is a multiple of 2&pgr;. In an emission spectrum of the semiconductor light emitting device, two troughs caused by interference between the emitted ray of light and the reflected ray of light appear in the both sides of a main peak.

Abstract: A semiconductor light-emitting device exhibits high reflectance even with less number of pairs of light-reflecting layers, and allows light emitted from the active layer to be effectively extracted outside. This semiconductor light-emitting device is fabricated at good mass productivity by a semiconductor light-emitting device manufacturing method including the step of providing an active layer which generates light having a specified wavelength on a semiconductor substrate. On the semiconductor substrate, are stacked an AlxGa1−xAs layer and the active layer, in this order. Part of the AlxGa1−xAs layer with respect to the is changed into an AlOy layer (where y is a positive real number).

Abstract: A semiconductor light emitting device has in sequence on a semiconductor substrate, a multilayer reflection film, a semiconductor layer, and a quantum well active layer. A distance between an upper surface of the multilayer reflection film and a lower surface of the quantum well active layer is 2&lgr;/n or less, where &lgr; is a light emission wavelength and n is an average refractive index of the semiconductor layer disposed in between the multilayer reflection film and the quantum well active layer. A phase difference between a reflected ray of light reflected by the multilayer reflection film and an emitted ray of light from the quantum well active layer is a multiple of 2&pgr;. In an emission spectrum of the semiconductor light emitting device, two troughs caused by interference between the emitted ray of light and the reflected ray of light appear in the both sides of a main peak.

Abstract: A light emitting diode comprising a multiple quantum well (MQW) layer as an active layer and a reflecting layer below the active layer, wherein the number and/or total thickness of well layers in the MQW layer is determined such that the MQW layer shows an external quantum efficiency higher than that of an MQW layer including a single well layer.

Abstract: A semiconductor light-emitting device includes an active layer having a single quantum well structure. The single quantum well structure enables a high-speed response such that the rise and fall time is 2.1 nsec. Further, the single quantum well active layer is doped with Zn at a concentration of 8×1017 cm−3. Thereby, the half-value width of the light-emitting spectrum is 25 nm or more, which is wider than in the case of no doping. Thus, temperature dependence of an optical output is reduced.

Abstract: A semiconductor light emitting device of the present invention at least includes: a GaAs substrate whose principal plane is inclined from a (100) plane in a [011] orientation; a first buffer layer of AlxGa1−xAs (0≦x≦1) provided on the principal plane of the GaAs substrate; a second buffer layer of AlyGaxIn1−y−zP (0≦y≦1 and 0≦z≦1) provided on the first buffer layer; a first cladding layer of AlaGatIn1−a−tP (0≦s≦1 and 0≦t≦1) provided on the second buffer layer; an active layer provided on the first cladding layer; and a second cladding layer provided on the active layer, wherein an Al content s of the first cladding layer is larger than an Al content y of the second buffer layer.

Abstract: On an n-GaP substrate transparent against a radiation light of an InAlGaP based semiconductor element, a lattice distortion relaxation layer, a clad layer 13, an active layer, and a clad layer are created with InAlGaP. On top of the layers, there is formed an InxGa1−xP current diffusion layer with In composition ratio x equal to (0<X<1). Through these steps, uneven depth on the crystal surface is decreased and crystal defect concentration is lowered. In addition, the energy gap of the current diffusion layer is made larger than the energy gap of the active layer, so that the GaP substrate and the uppermost InGaP current diffusion layer become transparent against a radiation light from the active layer, resulting in increased light emitting efficiency. Further, simple formation of layers from the lattice distortion relaxation layer to the current diffusion layer in sequence enables reduction of the production costs.

Abstract: A light emitting diode includes a substrate, a light emitting layer, a first cladding layer having a first conductivity type and an energy gap greater than an energy gap of the light emitting layer, a second cladding layer having a second conductivity type and an energy gap greater than an energy gap of the light emitting layer, and an intermediate barrier layer having the same conductivity type as the conductivity type of the light emitting layer but different from the conductivity type of the first or second cladding layer, and having an energy gap less than the energy gap of the first or second cladding layer but greater than the energy gap of the light emitting layer. The light emitting diode has a double heterostructure such that the light emitting layer is interposed between the first and second cladding layer. The intermediate barrier layer is disposed between the light emitting layer and the first cladding layer and/or between the light emitting layer and the second cladding layer.