Abstract: A terminal apparatus includes a receiver configured to receive a PDCCH including a DCI format indicating transmission of a PUCCH, and a transmitter configured to transmit the PUCCH. The number of slots NrepeatPUCCH is configured by a higher layer parameter NrofSlots, the PUCCH is repeated in the NrepeatPUCCH slots, a first PRB is configured by a higher layer parameter StartingPRB, a second PRB is configured by a higher layer parameter SecondHopPRB, one hopping pattern is determined based on the DCI format, and whether repetition of the PUCCH in each of the NrepeatPUCCH slots is allocated at least in the first PRB or at least in the second PRB is determined based on the one hopping pattern.

Abstract: A terminal device is described. The terminal device includes transmission circuitry configured to transmit a PRACH of a first subcarrier spacing; and reception circuitry configured to receive a DCI format with CRC scrambled by a RA-RNTI in response to the PRACH transmission; wherein the RA-RNTI is calculated at least based on a predetermined second subcarrier spacing.

Abstract: A terminal device comprising: transmission circuitry configured to transmit multiple instances numbered from 0 to Krep?1 for a repetition of a PUSCH, and higher layer processing circuitry configured to perform processes of a RRC layer, wherein a redundancy version for the nth instance is determined by mod(n,Ns) where Ns is a length of the redundancy version sequence, the multiple instances are determined based on a slot configuration provided through the RRC layer and the Krep, and the multiple instances are mapped on Krep slots which don't include a slot where a set of OFDM symbols allocated for an instance in a slot overlap with a downlink region for the slot configuration.

Abstract: A user equipment (UE) is described. The UE may comprise high-layer processing circuitry configured to acquire a RRC parameter and transmission circuitry configured to transmit a PUSCH in multiple slots. The RRC parameter may indicate that the multiple slots are determined according to slots which are available for transmission(s) of the PUSCH. If the RRC parameter is not provided, processing time for canceling a transmission of the PUSCH may be required to be shorter than or equal to a first length. If the RRC parameter is provided, the processing time for canceling a transmission of the PUSCH may be required to be shorter than or equal to a second length. The second length is longer than the first length.

Abstract: A terminal apparatus includes a reception circuitry that receives a PDCCH including a DCI format; and a transmission circuitry that transmits a PUCCH. The DCI format indicates transmission of the PUCCH. In a case that a first higher layer parameter NrofSlots indicating the number of repetitions is configured for a PUCCH format corresponding to the transmission of the PUCCH, the number of repetitions of the transmission of the PUCCH is determined based on the first higher layer parameter. In a case that the number of repetitions per transmission of the PUCCH is indicated to be valid for the transmission of the PUCCH based on a second higher layer parameter, the number of repetitions of the transmission of the PUCCH is determined based on a value set in a PUCCH-RepetitionFactor field for the transmission of the PUCCH, included in the DCI format.

Abstract: A terminal apparatus includes a reception circuitry that receives a PDCCH where a DCI format is mapped; and a transmission circuitry that transmits a PUCCH corresponding to a PUCCH resource indicated based on the DCI format. A first higher layer parameter is configured for a PUCCH format corresponding to the PUCCH. In a case that a second higher layer parameter is configured for the PUCCH resource, the number of repetitions of the PUCCH is a value of the second higher layer parameter, and in a case that the second higher layer parameter is not configured, the number of repetitions of the PUCCH is a value of the first higher layer parameter.

Abstract: A terminal device includes encoding circuitry configured to encode a code block and output coded bits for the code block, and rate-matching circuitry configured to perform bit-selection procedure for the coded bits, wherein the rate-matching circuitry is configured to determine a starting coded bit index for the bit-selection procedure based on a rate-matching sequence length or an index of an instance of a PUSCH in which the coded bits are mapped.

Abstract: Terminal device attempts to initiate a COT-u after the channel is sensed to be idle and transmit a configured grant PUSCH. A start of a time domain resource of the configured grant PUSCH is aligned with the start of the FFP-u. In a case that the FFP-u does not overlap with an IP-g of an FFP-g, the COT-u is initiated and the configured grant PUSCH is transmitted.

Abstract: Terminal device attempts to transmit a PUSCH scheduled by a DCI format after the channel is sensed to be idle. When the start of the PUSCH is not aligned with an FFP-u, in a case that the channel access mode is configured to as semi-static, the terminal device does not initiate a COT, regardless of indication by a ChannelAccess-CPext field in the DCI format.

Abstract: A terminal device includes configuration circuitry configured to determine multiple resources for configured repetitions for a PUSCH based on information indicating a starting OFDM symbol index in a slot, a length of a PUSCH in a slot and the number of repetitions, and baseband circuitry configured to generate one or more instances each of which includes one or more resources from the multiple resources, wherein the baseband circuitry is configured to determine the each of the one or more instances such that the each of the one or more instances has no gap in time domain, or the baseband circuitry is configured to determine each of the one or more instances such that the each of the one or more instances has no gap for downlink reception in time domain.

Abstract: An alkali etching liquid for a silicon wafer that includes an aqueous solution of potassium hydroxide, and from 0.1 g/L to 0.5 g/L of diethylene triamine pentaacetic acid. Furthermore, the Fe concentration of the aqueous solution of potassium hydroxide is no more than 50 ppb. An etching method that including a step of etching a silicon wafer with a resistivity of no more than 1 ?·cm using the etching liquid.

Abstract: An alkali etching liquid for a silicon wafer that includes an aqueous solution of potassium hydroxide, and from 0.1 g/L to 0.5 g/L of diethylene triamine pentaacetic acid. Furthermore, the Fe concentration of the aqueous solution of potassium hydroxide is no more than 50 ppb. An etching method that including a step of etching a silicon wafer with a resistivity of no more than 1 ?·cm using the etching liquid.

Abstract: An alkali etching liquid for a silicon wafer that includes an aqueous solution of potassium hydroxide, and from 0.1 g/L to 0.5 g/L of diethylene triamine pentaacetic acid. Furthermore, the Fe concentration of the aqueous solution of potassium hydroxide is no more than 50 ppb. An etching method that including a step of etching a silicon wafer with a resistivity of no more than 1?·cm using the etching liquid.

Abstract: A wire saw slurry containing, in a dispersing medium, 0.01-1 wt % of a metal film forming substance or a chelating agent that forms a film over copper in the dispersing medium. Entry of copper into a wafer bulk is prevented by the metal film forming substance or the chelating agent capturing the copper leaching out from brass plating of wires.

Abstract: An alkali etching liquid for a silicon wafer that includes an aqueous solution of potassium hydroxide, and from 0.1 g/L to 0.5 g/L of diethylene triamine pentaacetic acid. Furthermore, the Fe concentration of the aqueous solution of potassium hydroxide is no more than 50 ppb. An etching method that including a step of etching a silicon wafer with a resistivity of no more than 1?·cm using the etching liquid.