Abstract: A transistor includes a first active region and a second active region separated by a semiconductor channel, a gate stack structure including a gate dielectric and a gate electrode overlying the semiconductor channel, a gate contact via structure overlying and electrically connected to the gate electrode and having a top surface located in a first horizontal plane, a first active-region contact via structure overlying and electrically connected to the first active region, and having a top surface located within a second horizontal plane that underlies the first horizontal plane, a first connection line structure contacting a top surface of the first active-region contact via structure, and a first connection via structure contacting a top surface of the first connection line structure and having a top surface within the first horizontal plane.

Abstract: A comparison system includes: a first acquisition unit which acquires a first input/output electrical power amount of a first electrical power device including a first terminal, the first input/output electrical power amount being an input/output electrical power amount more on a side of the first electrical power device than the first terminal; a second acquisition unit which acquires a second input/output electrical power amount of a second electrical power device including a second terminal attachable to the first terminal, the second input/output electrical power amount being an input/output electrical power amount more on a side of the second electrical power device than the second terminal; and a comparison unit which compares the first input/output electrical power amount and the second input/output electrical power amount when input/output of electrical power is performed between the first and second electrical power device while the first and second terminal are attached to each other.

Abstract: In a control method of a stocking apparatus, the stocking apparatus includes a plurality of housings formed separately and independently. Each of the plurality of housings includes a plurality of stockers, each of which stocks an item. The control method comprises: acquiring a demand number which is a number of at least one item being the item to be received by the stocking apparatus from a utilizer of the stocking apparatus or a number of at least one item being the item to be provided by the stocking apparatus to the utilizer of the stocking apparatus; and determining a receiving-and-providing stocker which is at least at least one of the plurality of stockers of the plurality of housings and receives the item from the utilizer or provides the item to the utilizer, based on the demand number.

Abstract: A semiconductor structure includes at least two field effect transistors. A gate strip including a plurality of gate dielectrics and a gate electrode strip can be formed over a plurality of semiconductor active regions. Source/drain implantation is conducted using the gate strip as a mask. The gate strip is divided into gate electrodes after the implantation.

Abstract: A temperature of a power device to which a power storage device is attached is estimated on the basis of a temperature detected by a temperature detector provided in a power storage device detachably held in the power device.

Abstract: An acquirer acquires an observed amount related to at least one of an operation amount of a power device or an environmental state of the power device, the power device including an electric operation unit accommodated in a housing and a wind generation unit that supports a flow of air inside and outside of the housing, a comparator compares the observed amount acquired by the acquirer with a reference amount, and a determiner determines an abnormal change in the power device on the basis of a result of comparing the observed amount with the reference amount in the comparator.

Abstract: An information acquisition device includes an attachment/detachment information acquisition unit configured to acquire, regarding a first terminal provided in a power storage device and a second terminal provided in an electrical power device and is configured to be attachable/detachable to/from the first terminal, a number of times of attachment/detachment between the first terminal and the second terminal. An estimation device includes an estimation unit configured to estimate, regarding a first terminal provided in a power storage device and a second terminal provided in an electrical power device and is configured to be attachable/detachable to/from the first terminal, a deterioration degree of at least one of the first terminal or the second terminal.

Abstract: A semiconductor structure includes at least two field effect transistors. A gate strip including a plurality of gate dielectrics and a gate electrode strip can be formed over a plurality of semiconductor active regions. Source/drain implantation is conducted using the gate strip as a mask. The gate strip is divided into gate electrodes after the implantation.

Abstract: An information processing device includes an acquirer that acquires first date and time information including information relating to a date and time at which a battery detachably installed in a moving body capable of moving by use of electric power is used and second date and time information including position information of a user's portable terminal and information relating to a date and time at which the position information is acquired; and an integrator that generates position history information of the battery on the basis of the first date and time information and the second date and time information acquired by the acquirer.

Abstract: A semiconductor structure includes at least two field effect transistors. A gate strip including a plurality of gate dielectrics and a gate electrode strip can be formed over a plurality of semiconductor active regions. Source/drain implantation is conducted using the gate strip as a mask. The gate strip is divided into gate electrodes after the implantation.

Abstract: A semiconductor structure includes at least two field effect transistors. A gate strip including a plurality of gate dielectrics and a gate electrode strip can be formed over a plurality of semiconductor active regions. Source/drain implantation is conducted using the gate strip as a mask. The gate strip is divided into gate electrodes after the implantation.

Abstract: A semiconductor structure includes at least two field effect transistors. A gate strip including a plurality of gate dielectrics and a gate electrode strip can be formed over a plurality of semiconductor active regions. Deep source/drain regions are formed by implanting dopants into semiconductor active regions without implanting the dopants into inter-electrode regions of a shallow trench isolation structure. The gate strip is divided into gate stacks prior to or after formation of the deep source/drain regions.

Abstract: An information processing device comprises a prediction unit configured to predict a first user who uses a storage apparatus that stores a power storage device in a first time period subsequent to a current time point. The prediction unit may predict the first user based on usage information that indicates usage history of a second user who used storage apparatus in a second time period prior to the first time period. The usage information may include information related to a time frame when the second user used the storage apparatus in the second time period. The prediction unit may predict that at least some of the second users who used, in the second time period, the storage apparatus during a time frame to which the first time period belongs use the storage apparatus in the first time period.

Abstract: An information processing device includes an acquirer that acquires first date and time information including information relating to a date and time at which a battery detachably installed in a moving body capable of moving by use of electric power is used and second date and time information including position information of a user's portable terminal and information relating to a date and time at which the position information is acquired; and an integrator that generates position history information of the battery on the basis of the first date and time information and the second date and time information acquired by the acquirer.

Abstract: A semiconductor die includes alternating stacks of insulating layers and electrically conductive layers that are laterally separated from each other by first backside trenches that laterally extend along a first horizontal direction, an array of memory stack structures vertically extending through the alternating sacks, an inner edge seal structure that continuously laterally surrounds the alternating stacks, an outer edge seal structure that continuously laterally surrounds the inner edge seal structure, and additional alternating stacks of insulating layers and electrically conductive layers located between the inner edge seal structure and the outer edge seal structure.

Abstract: A semiconductor die includes alternating stacks of insulating layers and electrically conductive layers that are laterally separated from each other by first backside trenches that laterally extend along a first horizontal direction, an array of memory stack structures vertically extending through the alternating sacks, an inner edge seal structure that continuously laterally surrounds the alternating stacks, an outer edge seal structure that continuously laterally surrounds the inner edge seal structure, and additional alternating stacks of insulating layers and electrically conductive layers located between the inner edge seal structure and the outer edge seal structure.

Abstract: A heat exchange system for a vehicle includes: a first cooling circuit (L1-1, L1-2) is configured to cool an internal combustion engine a second cooling circuit (L2-1, L2-2) is configured to cool a driving electric motor outputs a driving force; a first heat exchanger (106) is configured to exchange heat between the first cooling circuit and the second cooling circuit; a first sensor (151) is configured to detect a temperature of the first cooling circuit; a second sensor (152) is configured to detect a temperature of the second cooling circuit; and a controller (155) is configured to execute control of performing heat exchange between a coolant in the first cooling circuit and a coolant in the second cooling circuit using the first heat exchanger when the temperature detected by the first sensor is lower than the temperature detected by the second sensor.

Abstract: A semiconductor structure includes a semiconductor device, an overlying silicon nitride diffusion barrier layer, and an interconnect structure extending through the silicon nitride diffusion barrier layer. The interconnect structure includes a titanium diffusion barrier structure in contact with the silicon nitride diffusion barrier layer to form a continuous hydrogen diffusion barrier structure.

Abstract: A semiconductor structure includes a semiconductor device, an overlying silicon nitride diffusion barrier layer, and an interconnect structure extending through the silicon nitride diffusion barrier layer. The interconnect structure includes a titanium diffusion barrier structure in contact with the silicon nitride diffusion barrier layer to form a continuous hydrogen diffusion barrier structure.

Abstract: A semiconductor structure includes a semiconductor device, an overlying silicon nitride diffusion barrier layer, and an interconnect structure extending through the silicon nitride diffusion barrier layer. The interconnect structure includes a titanium diffusion barrier structure in contact with the silicon nitride diffusion barrier layer to form a continuous hydrogen diffusion barrier structure.