Abstract: A drive control device is provided that drives an ultrasonic motor element including a vibrating body and piezoelectric elements provided on the vibrating body. The drive control device includes a speed detector that detects a driving speed of the ultrasonic motor element, a controller that sets drive conditions of the ultrasonic motor element, and a drive circuit unit that applies a drive voltage to the piezoelectric elements based on the drive conditions set by the controller. Moreover, the controller sets the drive conditions of the ultrasonic motor element based on the accumulated operation time for each driving speed of the ultrasonic motor element.

Abstract: The present disclosure provides a light-emitting device that is able to output light with a shorter pulse. A light-emitting device according to the present disclosure includes a capacitor, one or more solid-state light-emitting elements that emit light when electric power is supplied from the capacitor, and a semiconductor switch that controls electric power supply from the capacitor to the solid-state light-emitting element. Furthermore, the solid-state light-emitting element is placed on an outer face of the capacitor, the semiconductor switch is placed on the outer face of the capacitor or provided inside the capacitor, and the capacitor includes a connecting electrode between outer electrodes, the connecting electrode allowing the solid-state light-emitting element and the semiconductor switch to be connected in series.

Abstract: A drive control device is provided that vibrates a vibrating body by applying signals having mutually different phases to a plurality of electrodes provided at a piezoelectric element on the vibrating body. The drive control device includes a signal application unit that selectively applies a signal to an electrode of the plurality of electrodes; an amplitude detection unit that receives a feedback signal from an electrode different from the electrode to which the signal application unit has performed selective application; and a signal condition control unit that controls a condition of a signal to be applied by the signal application unit based on the feedback signal.

Abstract: The present disclosure provides a light-emitting device that is able to output light with a shorter pulse. A light-emitting device according to the present disclosure includes a capacitor, one or more solid-state light-emitting elements that emit light when electric power is supplied from the capacitor, and a semiconductor switch that controls electric power supply from the capacitor to the solid-state light-emitting element. Furthermore, the solid-state light-emitting element is placed on an outer face of the capacitor, the semiconductor switch is placed on the outer face of the capacitor or provided inside the capacitor, and the capacitor includes a connecting electrode between outer electrodes, the connecting electrode allowing the solid-state light-emitting element and the semiconductor switch to be connected in series.

Abstract: A challenge in outputting a voltage near the midpoint potential in a semiconductor switch which operates based on a low voltage power supply is to avoid a decrease in operation speed and a deterioration in accuracy of the output voltage which would be caused due to an increase in ON-resistance or occurrence of current leakage. Thus, a structure including a gray level generation circuit, an analog switch circuit and a backgate voltage control circuit is provided wherein the backgate voltage of each of an N-channel MOS transistor and a P-channel MOS transistor of the analog switch circuit to which the voltage of the gray level generation circuit is input is supplied from the backgate voltage control circuit which has an equal structure as that of the gray level generation circuit.

Abstract: A challenge in outputting a voltage near the midpoint potential in a semiconductor switch which operates based on a low voltage power supply is to avoid a decrease in operation speed and a deterioration in accuracy of the output voltage which would be caused due to an increase in ON-resistance or occurrence of current leakage. Thus, a structure including a gray level generation circuit, an analog switch circuit and a backgate voltage control circuit is provided wherein the backgate voltage of each of an N-channel MOS transistor and a P-channel MOS transistor of the analog switch circuit to which the voltage of the gray level generation circuit is input is supplied from the backgate voltage control circuit which has an equal structure as that of the gray level generation circuit.

Abstract: A challenge in outputting a voltage near the midpoint potential in a semiconductor switch which operates based on a low voltage power supply is to avoid a decrease in operation speed and a deterioration in accuracy of the output voltage which would be caused due to an increase in ON-resistance or occurrence of current leakage. Thus, a structure including a gray level generation circuit, an analog switch circuit and a backgate voltage control circuit is provided wherein the backgate voltage of each of an N-channel MOS transistor and a P-channel MOS transistor of the analog switch circuit to which the voltage of the gray level generation circuit is input is supplied from the backgate voltage control circuit which has an equal structure as that of the gray level generation circuit.

Abstract: A regulator for generating, from a first power supply voltage exceeding the breakdown voltage of a low voltage transistor block, a second power supply voltage lower than or equal to the breakdown voltage of the low voltage transistor block, includes an operational amplifier including low voltage transistors and high voltage transistors. An operational amplifier including only low voltage transistors can be employed.

Abstract: An object of the invention is to provide a reference voltage generation circuit relatively unaffected by ambient temperature, capable of supplying reference voltage equal to or less than the bandgap voltage of silicon. The reference voltage generation circuit includes: a current generation circuit which generates current; and a current-voltage conversion circuit which converts the current generated by said current generation circuit into voltage to generate reference voltage. The current generation circuit generates current which varies in value according to ambient temperature of the current generation circuit. The current-voltage conversion circuit includes two resistors, in which the current generated by the said current generation circuit flows, and which perform voltage conversion. One of the resistors has a positive temperature coefficient and the other has a negative temperature coefficient.

Abstract: A driving voltage control device includes: a first differential amplifier circuit for receiving a first input voltage and outputting a first output voltage; a second differential amplifier circuit for receiving a second input voltage and outputting a second output voltage; a control section for selecting one of a first mode and a second mode; and an output section for supplying the first output voltage output from the first differential amplifier circuit to an output node when the first mode is selected by the control section and supplying the second output voltage output from the second differential amplifier circuit to the output node when the second mode is selected by the control section. When the first mode is selected, the control section increases a driving power of the first differential amplifier circuit.

Abstract: A challenge in outputting a voltage near the midpoint potential in a semiconductor switch which operates based on a low voltage power supply is to avoid a decrease in operation speed and a deterioration in accuracy of the output voltage which would be caused due to an increase in ON-resistance or occurrence of current leakage. Thus, a structure including a gray level generation circuit, an analog switch circuit and a backgate voltage control circuit is provided wherein the backgate voltage of each of an N-channel MOS transistor and a P-channel MOS transistor of the analog switch circuit to which the voltage of the gray level generation circuit is input is supplied from the backgate voltage control circuit which has an equal structure as that of the gray level generation circuit.

Abstract: An object of the invention is to provide a reference voltage generation circuit relatively unaffected by ambient temperature, capable of supplying reference voltage equal to or less than the bandgap voltage of silicon. The reference voltage generation circuit includes: a current generation circuit which generates current; and a current-voltage conversion circuit which converts the current generated by said current generation circuit into voltage to generate reference voltage. The current generation circuit generates current which varies in value according to ambient temperature of the current generation circuit. The current-voltage conversion circuit includes two resistors, in which the current generated by the said current generation circuit flows, and which perform voltage conversion. One of the resistors has a positive temperature coefficient and the other has a negative temperature coefficient.

Abstract: A regulator for generating, from a first power supply voltage exceeding the breakdown voltage of a low voltage transistor block, a second power supply voltage lower than or equal to the breakdown voltage of the low voltage transistor block, includes an operational amplifier including low voltage transistors and high voltage transistors. An operational amplifier including only low voltage transistors can be employed.

Abstract: A control unit performs the first-third controls. The first control controls a group of switch elements so that a step-up voltage is supplied to a voltage output terminal by a pumping action of a step-up voltage accumulating capacity element by applying the reference power source voltage to the reference power source voltage accumulating capacity element in an inverse direction, after execution of an electric charge accumulating action with the reference power source voltage in the reference power source voltage accumulating capacity element. The second control controls the group of switching elements so as to provide a dead-time period, during which the reference power source and the reference power source voltage accumulating element are disconnected, between a period of the electric charge accumulating action and a period of the pumping action and between the period of pumping action and the period of electric charge accumulating action.

Abstract: A compact-size driving voltage controller is provided which can be driven with low power. The compact-size driving voltage controller which can be driven with low power includes a High output operational amplifier and a Low output operational amplifier for supplying driving voltages VcomH, VcomL to a load such as a liquid crystal display panel, an output switch for alternating between the outputs of the operational amplifiers, a Low voltage setting operational amplifier for generating a set voltage to be supplied to the non-inverted input terminal of the Low output operational amplifier, a set voltage generator including a current mirror circuit and a clamping circuit, a bias current controller for controlling the bias current flowing in each operational amplifier with a predetermined timing, and a timing controller for controlling the changeover timing of the output switch.

Abstract: A driving voltage control device includes: a first differential amplifier circuit for receiving a first input voltage and outputting a first output voltage; a second differential amplifier circuit for receiving a second input voltage and outputting a second output voltage; a control section for selecting one of a first mode and a second mode; and an output section for supplying the first output voltage output from the first differential amplifier circuit to an output node when the first mode is selected by the control section and supplying the second output voltage output from the second differential amplifier circuit to the output node when the second mode is selected by the control section. When the first mode is selected, the control section increases a driving power of the first differential amplifier circuit.

Abstract: A first control circuit is connected to a first booster circuit 30 which is a charge pump circuit. A capacitor C1 is shared by a charging operation for generating a first power source, which is a double boosting output of Vin (=V1=V3), from an output terminal Vout1 and a charging operation for generating a second power source, which is a ?1-fold boosting output of Vin (=V1), from an output terminal Vout2, to generate the first power source and the second power source. Thereafter, the connection is switched from the first control circuit to a second control circuit, so that the first power source and the third power source, which is a triple boosting output of Vin (=V1=V3=V7) from the output terminal Vout2, are generated.

Abstract: The present invention provides a compact-size driving voltage controller which can be driven with low power. The compact-size driving voltage controller which can be driven with low power includes a High output operational amplifier and a Low output operational amplifier for supplying driving voltages VcomH, VcomL to a load such as a liquid crystal display panel, an output switch for alternating between the outputs of the operational amplifiers, a Low voltage setting operational amplifier for generating a set voltage to be supplied to the non-inverted input terminal of the Low output operational amplifier, a set voltage generator including a current mirror circuit and a clamping circuit, a bias current controller for controlling the bias current flowing in each operational amplifier with a predetermined timing, and a timing controller for controlling the changeover timing of the output switch.