Abstract: A method of manufacturing a flat type heat pipe, having an inside of which partitioned into a plurality of cells, that is capable of flexibly setting a concentration of working fluid in each cell is provided. The method includes processes of preparing a flat container, pouring, and closing. In the preparing, the flat container having the inside of which two-dimensionally partitioned into the plurality of cells is prepared. The flat container has connecting holes through which adjacent cells communicate and an inlet hole for the working fluid to be poured from outside. In the pouring, the working fluid is poured into respective cells through the inlet hole and the connecting holes. In the closing, the inlet hole and the connecting holes are closed. In one method, after sealing a specified cell, following processes of heating, removing air, pouring, evaporating, and closing are repeated for other cells.

Abstract: A circuit device includes a ceramic substrate, an Al wiring layer provided on the ceramic substrate, and a semiconductor device and a bus bar which are electrically connected to the wiring layer. On part of the wiring layer, a Ni layer is plated. Thus a coated region in which the wiring layer is coated with nickel having solder wetability superior to aluminum and an exposing region in which the wiring layer is exposed as viewed from above the ceramic substrate are provided. The semiconductor device is connected onto the Ni layer within the coated region through solder. The bus bar is ultrasonically bonded to the wiring layer within the exposing region as viewed from above the ceramic substrate. Thus, the circuit device including the semiconductor device and the bus bar that are bonded to the ceramic substrate by sufficient bonding strength and its manufacturing method are provided.

Abstract: A circuit device includes a ceramic substrate, an Al wiring layer provided on the ceramic substrate, and a semiconductor device and a bus bar which are electrically connected to the wiring layer. On part of the wiring layer, a Ni layer is plated. Thus a coated region in which the wiring layer is coated with nickel having solder wetability superior to aluminum and an exposing region in which the wiring layer is exposed as viewed from above the ceramic substrate are provided. The semiconductor device is connected onto the Ni layer within the coated region through solder. The bus bar is ultrasonically bonded to the wiring layer within the exposing region as viewed from above the ceramic substrate. Thus, the circuit device including the semiconductor device and the bus bar that are bonded to the ceramic substrate by sufficient bonding strength and its manufacturing method are provided.