Abstract: Provided is a mechanism capable of further reducing the number of residues remaining on a surface of a polished object to be polished after CMP. A post-chemical mechanical polishing cleaning composition containing the following components (A) and (B), and having a pH of more than 7.0 and 10.0 or less is provided: Component (A): a nonionic polymer Component (B): at least one compound selected from the group consisting of a compound having an amino group and a hydroxyl group, a compound represented by formula (1): H2N[(CH2)xNR1]yR2, and hexamethylenetetramine.

Abstract: To provide a thick film resistor paste for a resistor having no abnormalities of cracks in appearance and sufficient surge resistance, especially for low resistance, while using lead borosilicate glass, a thick film resistor using the thick film resistor paste, and an electronic component provided with the thick film resistor. A thick film resistor paste comprises a ruthenium-oxide-containing glass powder and an organic vehicle, the ruthenium-oxide-containing glass powder comprises 10 to 60 mass % of ruthenium oxide, a glass composition of the ruthenium-oxide-containing glass powder comprises 60 mass % or less of silicon oxide, 30 to 90 mass % of lead oxide, 5 to 50 mass % of boron oxide relative to 100 mass % of glass components, and, a combined amount of silicon oxide, lead oxide and boron oxide by mass % is 50 mass % or more relative to 100 mass % of the glass components.

Abstract: Provided is a means for allowing residues remaining on the surface of a polished object to be further reduced. Provided is a composition for surface treatment containing components (A) to (C) below and having pH of more than 7.0: the component (A): a piperazine-based compound represented by a formula (a) below and having two or more amino groups having pKa larger than the pH of the composition for surface treatment, the component (B): an anionic polymer, and the component (C): a buffer represented by a formula: A-COO—NH4+ (A is an alkyl group having 1 or more and 10 or less carbon atoms or a phenyl group).

Abstract: The thick film resistor paste for a resistor has no abnormalities of cracks in appearance and sufficient surge resistance, especially for low resistance, while using lead borosilicate glass. The thick film resistor paste comprises a silver powder or a palladium powder, or a mixture of both of the silver powder and the palladium powder, a ruthenium-oxide-containing glass powder and an organic vehicle, the ruthenium-oxide-containing glass powder comprises 10 to 60 mass % of ruthenium oxide, a glass composition of the ruthenium-oxide-containing glass powder comprises 3 to 60 mass % of silicon oxide, 30 to 90 mass % of lead oxide, 5 to 50 mass % of boron oxide relative to 100 mass % of glass components, and, a combined amount of silicon oxide, lead oxide and boron oxide by mass % is 50 mass % or more relative to 100 mass % of the glass components.

Abstract: The present invention provides a means that may achieve a markedly high selectivity ratio and a markedly high effect of reducing the level difference between dissimilar materials while achieving a high polishing speed for a specific material. The present invention relates to a polishing composition containing silica on the surface of which an organic acid is immobilized, and a polyalkylene glycol, wherein the molecular weight distribution of the polyalkylene glycol in terms of polyethylene glycol by gel permeation chromatography (GPC) has two or more peaks within a predetermined molecular weight range, at least one of the peaks is derived from polyethylene glycol, and a pH of the polishing composition is 3 or more and 6 or less.

Abstract: A light emitter is formed from nanoparticles including a compound semiconductor containing an Ag component, In component, and Se component. The peak wavelength of the emission intensity falls within the range of 700 to 1400 nm, and the half-value width ?H for the peak wavelength is 100 nm or less. The light emitted is configured to emit strong light in the near-infrared region, and which is capable of detecting biological information, and is preferred for bioimaging.

Abstract: A light emitter is formed from nanoparticles including a compound semiconductor containing an Ag component, In component, and Se component. The peak wavelength of the emission intensity falls within the range of 700 to 1400 nm, and the half-value width ?H for the peak wavelength is 100 nm or less. The light emitted is configured to emit strong light in the near-infrared region, and which is capable of detecting biological information, and is preferred for bioimaging.

Abstract: By using a coating method, which is a simple method of manufacturing a transparent conductive film at low cost, a transparent conductive film formed with heating at a low temperature, in particular, lower than 300° C. with both of excellent transparency and conductivity and also with excellent film strength and a method of manufacturing this transparent conductive film are provided.

Abstract: By using a coating method, which is a method of manufacturing a transparent conductive film, with low-temperature heating lower than 300° C., a transparent conductive film with excellent transparency, conductivity, film strength, and resistance stability and a method of manufacturing this film are provided. In the method of manufacturing a transparent conductive film, a heat energy ray irradiating step is a step of irradiating with the energy rays while heating under an oxygen-containing atmosphere to a heating temperature lower than 300° C. to form the inorganic film, and the plasma processing step is a step of performing the plasma processing on the inorganic film under a non-oxidizing gas atmosphere at a substrate temperature lower than 300° C. to promote mineralization or crystallization of the film, thereby forming a conductive oxide fine-particle layer densely packed with conductive oxide fine particles having a metal oxide as a main component.

Abstract: Provided is a method of manufacturing a metal oxide film to be formed through the following processes: a coating process of forming a coating film on a substrate by using a coating liquid for forming metal oxide film containing any of various organometallic compounds; a drying process of making the coating film into a dried coating film; and a heating process of forming an inorganic film from the dried coating film under an oxygen-containing atmosphere having a dew-point temperature equal to or lower than ?10° C.

Abstract: Provided is a method of manufacturing a metal oxide film to be formed through the following processes: a coating process of forming a coating film on a substrate by using a coating liquid for forming metal oxide film containing any of various organometallic compounds; a drying process of making the coating film into a dried coating film; and a heating process of forming an inorganic film from the dried coating film under an oxygen-containing atmosphere having a dew-point temperature equal to or lower than ?10° C.

Abstract: By using a coating method, which is a simple method of manufacturing a transparent conductive film at low cost, a transparent conductive film formed with heating at a low temperature, in particular, lower than 300° C. with both of excellent transparency and conductivity and also with excellent film strength and a method of manufacturing this transparent conductive film are provided.

Abstract: By using a coating method, which is a method of manufacturing a transparent conductive film, with low-temperature heating lower than 300° C., a transparent conductive film with excellent transparency, conductivity, film strength, and resistance stability and a method of manufacturing this film are provided. In the method of manufacturing a transparent conductive film, a heat energy ray irradiating step is a step of irradiating with the energy rays while heating under an oxygen-containing atmosphere to a heating temperature lower than 300° C. to form the inorganic film, and the plasma processing step is a step of performing the plasma processing on the inorganic film under a non-oxidizing gas atmosphere at a substrate temperature lower than 300° C. to promote mineralization or crystallization of the film, thereby forming a conductive oxide fine-particle layer densely packed with conductive oxide fine particles having a metal oxide as a main component.