Abstract: A substrate processing method includes processing a first surface of a substrate by a chemical liquid supplied to the first surface from a chemical liquid supply; and heating the substrate by starting a supply of a heated fluid to a second surface of the substrate prior to a start of a supply of the chemical liquid to the first surface of the substrate. A temperature of at least one of the chemical liquid to be supplied to the first surface or the heated fluid to be supplied to the second surface is adjusted based on a chemical liquid discharge standby time during which a discharge of the chemical liquid from the chemical liquid supply is not performed continuously.

Abstract: An apparatus includes: a substrate holder including a base member and configured to hold a substrate so as to be spaced apart upward from the base member; a rotary driver configured to rotationally drive the substrate holder; a processing liquid nozzle configured to supply a processing liquid to the substrate; a liquid receiving cup configured to receive the processing liquid scattered from the substrate; a cup exhaust passage configured to suction an atmosphere in the liquid receiving cup; a purge gas nozzle configured to discharge a purge gas into a space formed between the substrate and the base member; a purge gas flow rate controller configured to control a flow rate of the purge gas discharged from the purge gas nozzle; and a controller configured to control at least an operation of the purge gas flow rate controller.

Abstract: An apparatus includes: a tank storing a processing liquid; a circulation line; a branch line; a processing part for supplying the processing liquid to a substrate at the branch line; a discharge part for reducing a storage amount of the processing liquid; a supply part for supplying a new processing liquid to the tank; and a controller including: a first determination part for determining whether the storage amount is less than a lower limit value; a first replenishment controller for replenishing the processing liquid to the tank when the storage amount is less than the lower limit value; a calculation part for calculating a replenishment amount of the processing liquid; and a second replenishment controller for reducing the storage amount and replenishing the processing liquid to the tank when a calculation value of the replenishment amount is less than a set value.

Abstract: An apparatus includes: a substrate holder including a base member and configured to hold a substrate so as to be spaced apart upward from the base member; a rotary driver configured to rotationally drive the substrate holder; a processing liquid nozzle configured to supply a processing liquid to the substrate; a liquid receiving cup configured to receive the processing liquid scattered from the substrate; a cup exhaust passage configured to suction an atmosphere in the liquid receiving cup; a purge gas nozzle configured to discharge a purge gas into a space formed between the substrate and the base member; a purge gas flow rate controller configured to control a flow rate of the purge gas discharged from the purge gas nozzle; and a controller configured to control at least an operation of the purge gas flow rate controller.