Abstract: An organic light-emitting device cutting off ambient light while keeping emission intensity includes a pair of first and second electrodes opposed to each other; and a plurality of organic semiconductor layers layered and disposed between the first and second electrodes, wherein the organic semiconductor layers include an organic light-emitting layer, the organic semiconductor device further comprising a light-scattering layer layered and disposed between the organic light-emitting layer and at least one of the first and second electrodes. The light-scattering layer includes: organic materials having carrier injection and transport characteristics of transporting electrons and/or holes; and plural particles dispersed among the organic materials so that light emitted from the organic light-emitting layer is passed therethrough.

Abstract: Organic semiconductor layers include between a first electrode and a photoelectric converting layer a light extraction improving layer that contains at least silver or gold in part as a component, partially reflects light, and has transparency. The light extraction improving layer is in contact with or is inserted into a functional layer containing, for example, an organic semiconductor material, an oxide, a fluoride, or an inorganic compound having strong acceptor properties or strong donor properties with an ionization potential of 5.5 eV or higher, within the organic semiconductor layers.

Abstract: Light extraction efficiency is improved as a whole light emitting element. A light emitting element (3) is provided with a transparent or semitransparent first electrode (46); a second electrode (52) paired with the first electrode (46) for reflecting light; a hole taken out from one of the first electrode (46) and the second electrode (52); and organic semiconductor layers (47, 48, 49, 50, 51) having a photoelectric conversion layer (49) which emits light by recombined with an electrode taken out from the other one of the first electrode (46) and the second electrode (52). The organic semiconductor layers (47, 48, 49, 50, 51) are provided with a light extraction improving layer (99) between the first electrode (46) and the photoelectric conversion layer (49). The light extraction improving layer contains silver or gold as at least a part of the components, partially reflects light and has light transmissive characteristics.

Abstract: An organic semiconductor device includes, between a pair of electrodes of a first metal electrode and a second electrode, at least, a light-emitting layer, a hole injection layer which removes holes from the first metal electrode, a hole transporting layer formed on the light-emitting layer on a side of the first metal electrode for transporting the holes removed by the hole injection layer to the light-emitting layer, and an electron transporting layer formed on the light-emitting layer on a side of the second electrode for removing electrons from the second electrode and transporting the electrons to the light-emitting layer, wherein the organic semiconductor device further includes a crystallinity controlling member which is a series of discontinuous clusters along the top surface of the hole injection layer that is in contact with the first metal electrode, for controlling an orientation of crystalline molecules.

Abstract: An organic semiconductor device with a vertical structure having both functions of an organic thin film transistor and light-emitting element, where the electrical characteristics as both the organic thin film transistor and light-emitting element can be controlled in the case of forming a gate electrode with an organic conductive film, and a manufacturing method thereof. The above organic semiconductor device has such a structure that organic semiconductor films are sandwiched between a pair of electrodes functioning as a source electrode and drain electrode of an organic thin film transistor and also functioning as an anode and cathode of a light-emitting element, a thin organic conductive film functioning as a gate electrode is sandwiched between the organic semiconductor films, and a part of the organic conductive film is electrically connected to an auxiliary electrode, thereby the electrical characteristics as both the organic thin film transistor and light-emitting element can be controlled.

Abstract: An organic electroluminescent device including an organic electroluminescent layer that is stacked between a plurality of electrodes and emits light by an electric field generated between the plurality of electrodes and, and a power generating semiconductor part that is arranged on the periphery of this organic electroluminescent layer and utilizes from the light emitted by the organic electroluminescent layer an internal light L that has not been emitted from the transparent or semi-transparent electrode to the outside and remains inside in order to generate power by a photoelectric conversion function is provided.

Abstract: An organic semiconductor device includes organic semiconductor layers (3, 4) and an electron injecting electrode (5) which is composed of MgAu alloy and injects electrons into the organic semiconductor layers (3, 4). The MgAu alloy forming the electron injecting electrode (5) may contain not more than 85 atom % of Au. The organic semiconductor device may further include a hole injecting electrode (2) for injecting holes into the organic semiconductor layers (3, 4). The electron injecting electrode and the hole injecting electrode are arranged apart from each other in such a manner that they fit to each other. The organic semiconductor device may further include a gate electrode which is arranged opposite, via an insulating film, to the region between the electron injecting electrode and the hole injecting electrode.

Abstract: To provide an organic solar cell in which a light is preferably introduced from a side opposite to a substrate and the light thus introduced can be efficiently used. The organic solar cell including a substrate; a first electrode; an organic solid layer; and a second electrode, laminated in this order, wherein the second electrode is made from an alloy containing magnesium and has a thickness of 1 to 20 nm.

Abstract: The object is to provide a light-emitting transistor material which is high in both luminescent property and mobility when used as a light-emitting transistor device. A light-emitting transistor device is provided in which light emission of a specific pyrene-based organic compound is used for a light-emitting layer of a transistor device.

Abstract: An organic semiconductor device with a vertical structure having both functions of an organic thin film transistor and light-emitting element, where the electrical characteristics as both the organic thin film transistor and light-emitting element can be controlled in the case of forming a gate electrode with an organic conductive film, and a manufacturing method thereof. The above organic semiconductor device has such a structure that organic semiconductor films are sandwiched between a pair of electrodes functioning as a source electrode and drain electrode of an organic thin film transistor and also functioning as an anode and cathode of a light-emitting element, a thin organic conductive film functioning as a gate electrode is sandwiched between the organic semiconductor films, and a part of the organic conductive film is electrically connected to an auxiliary electrode, thereby the electrical characteristics as both the organic thin film transistor and light-emitting element can be controlled.

Abstract: An organic semiconductor device with a vertical structure having both functions of an organic thin film transistor and light-emitting element, where the electrical characteristics as both the organic thin film transistor and light-emitting element can be controlled in the case of forming a gate electrode with an organic conductive film, and a manufacturing method thereof. The above organic semiconductor device has such a structure that organic semiconductor films are sandwiched between a pair of electrodes functioning as a source electrode and drain electrode of an organic thin film transistor and also functioning as an anode and cathode of a light-emitting element, a thin organic conductive film functioning as a gate electrode is sandwiched between the organic semiconductor films, and a part of the organic conductive film is electrically connected to an auxiliary electrode, thereby the electrical characteristics as both the organic thin film transistor and light-emitting element can be controlled.

Abstract: An organic semiconductor light-emitting device having the form of a field-effect transistor and a display using this device is provided. In the device, electrons and holes can be transported. The device comprises an organic semiconductor light-emitting layer capable of emitting light by recombination of holes and electrons, a hole injection electrode for injecting holes into the organic semiconductor light-emitting layer, an electron injection electrode for injecting electrons into the organic semiconductor light-emitting layer, and a gate electrode so disposed as to be opposed to the organic semiconductor light-emitting layer between the electrodes. When a control voltage is applied to the gate electrode, the carrier distribution in the organic semiconductor light-emitting layer is controlled. Thus, the light emission can be turned on/off and the emission intensity can be modulated.

Abstract: An object is to provide a pyrene based compound that is good in both properties of light emission and mobility when the compound is used as a light emitting transistor element; and a light emitting transistor element wherein this specific pyrene based compound is used. A pyrene based compound represented by the following chemical formula (1) is used as a main component of a light emitting layer in a light emitting transistor element: (wherein R1 represents a group selected from a heteroaryl group which may have a substituent, an aryl group which may have a substituent except a phenyl group which does not have any substituent, an alkyl group which may have a substituent and has a main chain having 1 to 20 carbon atoms, an alkenyl group which may have a substituent, an alkynyl group which may have a substituent, a silyl group which may have a substituent, and a halogen atom.

Abstract: It is an object to provide an organic fluorescent substance which can be used in a light emitting transistor element and an organic EL element. The invention provides a light emitting transistor element or an organic electroluminescence element wherein a specific asymmetric pyrene based compound is used in a light emitting layer in the light emitting transistor element, or in a light emitting layer, a hole transporting layer or an electron transporting layer in the organic EL element.

Abstract: An organic semiconductor device includes organic semiconductor layers (3, 4) and an electron injecting electrode (5) which is composed of MgAu alloy and injects electrons into the organic semiconductor layers (3, 4). The MgAu alloy forming the electron injecting electrode (5) may contain not more than 85 atom % of Au. The organic semiconductor device may further include a hole injecting electrode (2) for injecting holes into the organic semiconductor layers (3, 4). The electron injecting electrode and the hole injecting electrode are arranged apart from each other in such a manner that they fit to each other. The organic semiconductor device may further include a gate electrode which is arranged opposite, via an insulating film, to the region between the electron injecting electrode and the hole injecting electrode.

Abstract: An organic semiconductor device with a vertical structure having both functions of an organic thin film transistor and light-emitting element, where the electrical characteristics as both the organic thin film transistor and light-emitting element can be controlled in the case of forming a gate electrode with an organic conductive film, and a manufacturing method thereof. The above organic semiconductor device has such a structure that organic semiconductor films are sandwiched between a pair of electrodes functioning as a source electrode and drain electrode of an organic thin film transistor and also functioning as an anode and cathode of a light-emitting element, a thin organic conductive film functioning as a gate electrode is sandwiched between the organic semiconductor films, and a part of the organic conductive film is electrically connected to an auxiliary electrode, thereby the electrical characteristics as both the organic thin film transistor and light-emitting element can be controlled.

Abstract: The switching element has a switching layer between a first electrode layer and a second electrode layer. The switching layer includes a charge transfer complex containing an electron donor and an electron acceptor. An insulating layer is provided between the first electrode layer and the switching layer, and contacts the switching layer. The switching layer switches from a high-resistance state to a low-resistance state upon application of a voltage greater than a first threshold value in a first bias direction. Thereafter, the switching layer maintains the low-resistance state when the applied voltage decreases beyond the first threshold value. When the applied voltage becomes not smaller than a second threshold value in a second bias direction or a reverse direction to the first bias direction, the switching layer switches from the low-resistance state to the high-resistance state.

Abstract: The switching element has a switching layer between a first electrode layer and a second electrode layer. The switching layer includes a charge transfer complex containing an electron donor and an electron acceptor. An insulating layer is provided between the first electrode layer and the switching layer, and contacts the switching layer. The switching layer switches from a high-resistance state to a low-resistance state upon application of a voltage greater than a first threshold value in a first bias direction. Thereafter, the switching layer maintains the low-resistance state when the applied voltage decreases beyond the first threshold value. When the applied voltage becomes not smaller than a second threshold value in a second bias direction or a reverse direction to the first bias direction, the switching layer switches from the low-resistance state to the high-resistance state.