Abstract: A method for reducing metal contamination performed after dry cleaning of a process chamber used for a film deposition process and before starting the film deposition process is provided. In the method, a temperature in the process chamber is changed from a first temperature during the dry cleaning to a film deposition temperature. Hydrogen and oxygen are activated in the vacuum chamber while supplying hydrogen and oxygen into the process chamber. An inside of the process chamber is coated by performing the film deposition process without a substrate in the process chamber after the step of activating hydrogen and oxygen.

Abstract: A method for manufacturing a semiconductor device is provided. In the method, impurities contained in a first layer formed on a substrate are removed by heating the first layer. On the first layer, a second layer is formed containing a component that forms a substance that is able to vaporize by reacting with the impurities.

Abstract: There is provision of a method of cleaning an exhaust pipe of a film forming apparatus for removing a component adhering to the exhaust pipe which is generated from a source gas for forming film supplied from a gas supply part to a processing chamber of the film forming apparatus. The method includes a step of supplying a cleaning gas from the gas supply part to the exhaust pipe via the processing chamber while the film forming apparatus is operating but a film forming process is not performed in the processing chamber, in order to remove the component by causing the component to vaporize upon reacting with the cleaning gas. The cleaning gas to be supplied is capable of causing the component adhering to the exhaust pipe to change into an evaporable substance by chemical reaction in an atmosphere inside the exhaust pipe.

Abstract: There is provision of a method of cleaning an exhaust pipe of a film forming apparatus for removing a component adhering to the exhaust pipe which is generated from a source gas for forming film supplied from a gas supply part to a processing chamber of the film forming apparatus. The method includes a step of supplying a cleaning gas directly, from a cleaning gas supply part disposed near a joint between the processing chamber and the exhaust pipe, to the exhaust pipe without passing through the processing chamber, in order to remove the component by causing the component to vaporize upon reacting with the cleaning gas. The cleaning gas to be supplied is capable of causing the component adhering to the exhaust pipe to change into an evaporable substance by chemical reaction in an atmosphere inside the exhaust pipe.

Abstract: A method performed by a film deposition apparatus including a process chamber and a rotary table that is disposed in the process chamber and includes a substrate-mounting surface on which a substrate is placeable. The method includes a first cleaning process of supplying a cleaning gas from above the substrate-mounting surface of the rotary table while rotating the rotary table in a first cleaning position, and a second cleaning process of supplying the cleaning gas from above the substrate-mounting surface of the rotary table while rotating the rotary table in a second cleaning position that is lower than the first cleaning position.

Abstract: There is provided a film forming apparatus including a raw material gas nozzle provided with gas discharge holes for discharging a mixed gas of a raw material gas and a carrier gas; a flow regulating plate portion extended along the longitudinal direction of the raw material gas nozzle; a central region configured to supply a separating gas from a center side within a vacuum container toward a substrate loading surface of a rotary table; a protuberance portion protruded from the flow regulating plate portion toward the rotary table at a position shifted toward a center side of the rotary table from the gas discharge holes; and a protuberance portion configured to restrain the separating gas from flowing between the flow regulating plate portion and the rotary table; and an exhaust port configured to vacuum exhaust the interior of the vacuum container.

Abstract: A method for manufacturing a semiconductor device is provided. In the method, impurities contained in a first layer formed on a substrate are removed by heating the first layer. On the first layer, a second layer is formed containing a component that forms a substance that is able to vaporize by reacting with the impurities.

Abstract: An etching method for etching a film in a recessed pattern formed on a surface of a substrate in a process chamber to form a V-shaped sectional shape includes setting two or more parameters of the process chamber to such conditions that an etching rate of the surface of the substrate becomes higher than that of an inside of the recessed pattern; and supplying an etching gas to the surface of the substrate under the condition.

Abstract: There is provision of a method of cleaning an exhaust pipe of a film forming apparatus for removing a component adhering to the exhaust pipe which is generated from a source gas for forming film supplied from a gas supply part to a processing chamber of the film forming apparatus. The method includes a step of supplying a cleaning gas directly, from a cleaning gas supply part disposed near a joint between the processing chamber and the exhaust pipe, to the exhaust pipe without passing through the processing chamber, in order to remove the component by causing the component to vaporize upon reacting with the cleaning gas. The cleaning gas to be supplied is capable of causing the component adhering to the exhaust pipe to change into an evaporable substance by chemical reaction in an atmosphere inside the exhaust pipe.

Abstract: A film deposition apparatus includes a vacuum chamber and a turntable provided in the vacuum chamber. A concave portion is formed in a surface of the turntable to accommodate a substrate therein, and a pedestal portion is provided to support a location inside a periphery of the substrate in the concave portion. At least one communication passage is formed in a wall portion of the concave portion to cause a first space around the pedestal portion in the concave portion to be in communication with a second space outside the turntable provided in an end area of the concave portion located opposite to a first center of the turntable when seen from a second center of the concave portion. An exhaust opening is provided to evacuate the vacuum chamber.

Abstract: A method for reducing metal contamination performed after dry cleaning of a process chamber used for a film deposition process and before starting the film deposition process is provided. In the method, a temperature in the process chamber is changed from a first temperature during the dry cleaning to a film deposition temperature. Hydrogen and oxygen are activated in the vacuum chamber while supplying hydrogen and oxygen into the process chamber. An inside of the process chamber is coated by performing the film deposition process without a substrate in the process chamber after the step of activating hydrogen and oxygen.

Abstract: A method performed by a film deposition apparatus including a process chamber and a rotary table that is disposed in the process chamber and includes a substrate-mounting surface on which a substrate is placeable. The method includes a first cleaning process of supplying a cleaning gas from above the substrate-mounting surface of the rotary table while rotating the rotary table in a first cleaning position, and a second cleaning process of supplying the cleaning gas from above the substrate-mounting surface of the rotary table while rotating the rotary table in a second cleaning position that is lower than the first cleaning position.

Abstract: A film forming apparatus for forming films on substrates mounted on a rotary table by rotating the rotary table and causing the substrates to sequentially pass through areas to which process gases are supplied, including: recess portions formed in one surface of the rotary table along a circumferential direction and configured to accommodate the substrates; mounting portions disposed with the recess portions and configured to support regions of the substrates closer to centers than peripheral edge portions thereof; groove portions formed within the recess portions so as to surround the mounting portions; communication paths formed so as to extend from regions of the groove portions existing at a side of a rotational center of the rotary table toward an external area of the recess portions; and an exhaust port through which an interior of a vacuum container is vacuum-exhausted.

Abstract: A method for processing a substrate using a substrate processing apparatus is provided. The substrate processing apparatus includes a process chamber and a rotatable turntable having a substrate receiving part provided in the process chamber. In the method, a substrate is placed on a substrate receiving part, and the substrate is processed by supplying process gases into the process chamber. At least a water vapor is supplied into the chamber when the substrate is placed on the substrate receiving part. After that, the substrate is carried out of the process chamber.

Abstract: A film deposition apparatus includes a vacuum chamber and a turntable provided in the vacuum chamber. A concave portion is formed in a surface of the turntable to accommodate a substrate therein, and a pedestal portion is provided to support a location inside a periphery of the substrate in the concave portion. At least one communication passage is formed in a wall portion of the concave portion to cause a first space around the pedestal portion in the concave portion to be in communication with a second space outside the turntable provided in an end area of the concave portion located opposite to a first center of the turntable when seen from a second center of the concave portion. An exhaust opening is provided to evacuate the vacuum chamber.

Abstract: There is provided a film forming apparatus including a raw material gas nozzle provided with gas discharge holes for discharging a mixed gas of a raw material gas and a carrier gas; a flow regulating plate portion extended along the longitudinal direction of the raw material gas nozzle; a central region configured to supply a separating gas from a center side within a vacuum container toward a substrate loading surface of a rotary table; a protuberance portion protruded from the flow regulating plate portion toward the rotary table at a position shifted toward a center side of the rotary table from the gas discharge holes; and a protuberance portion configured to restrain the separating gas from flowing between the flow regulating plate portion and the rotary table; and an exhaust port configured to vacuum exhaust the interior of the vacuum container.

Abstract: A method for processing a substrate using a substrate processing apparatus is provided. The substrate processing apparatus includes a process chamber and a rotatable turntable having a substrate receiving part provided in the process chamber. In the method, a substrate is placed on a substrate receiving part, and the substrate is processed by supplying process gases into the process chamber. At least a water vapor is supplied into the chamber when the substrate is placed on the substrate receiving part. After that, the substrate is carried out of the process chamber.

Abstract: A vapor-phase growing unit of this invention includes: a reaction container in which a substrate is arranged, a first gas-introducing part having a first gas-introducing tube in which a gas-spouting port opening in the reaction container is formed, the first gas-introducing part serving to supply into the reaction container a first gas consisting of an organic-metal including gas, and a second gas-introducing part having a second gas-introducing tube in which a gas-spouting port opening in the reaction container is formed, the second gas-introducing part serving to supply into the reaction container a second gas which reacts with the organic-metal including gas and whose density is smaller than that of the organic-metal including gas. The gas-spouting port of the first gas-introducing tube and the gas-spouting port of the second gas-introducing tube are arranged along an outside periphery of the substrate arranged in the reaction container.

Abstract: A film-formation method for a semiconductor process includes seed film formation and main film formation. In the seed film formation, a metal-containing raw material gas and a first assist gas to react therewith are supplied into a process container, which accommodates a target substrate having an underlying layer, thereby forming a seed film on the underlying layer by CVD. In the main film formation, the raw material gas and a second assist gas to react therewith are supplied into the process container, thereby forming a main film on the seed film by CVD. The seed film formation includes first and second periods performed alternately and continuously. In each first period, the raw material gas is supplied into the process container while the first assist gas is stopped. In each second period, the first assist gas is supplied into the process container while the raw material gas is stopped.

Abstract: A vapor-phase growing unit of this invention includes: a reaction container in which a substrate is arranged, a first gas-introducing part having a first gas-introducing tube in which a gas-spouting port opening in the reaction container is formed, the first gas-introducing part serving to supply into the reaction container a first gas consisting of an organic-metal including gas, and a second gas-introducing part having a second gas-introducing tube in which a gas-spouting port opening in the reaction container is formed, the second gas-introducing part serving to supply into the reaction container a second gas which reacts with the organic-metal including gas and whose density is smaller than that of the organic-metal including gas. The gas-spouting port of the first gas-introducing tube and the gas-spouting port of the second gas-introducing tube are arranged along an outside periphery of the substrate arranged in the reaction container.