Abstract: One semiconductor device includes a capacitor having a lower electrode which is arranged on a semiconductor substrate, a second protective film, a dielectric film which has a defect that extends in the film thickness direction from an upper surface that faces the second protective film, a third protective film which has at least a defect filling film that is formed of an insulating body filling the defect, a first protective film which covers the dielectric film and the third protective film, and an upper electrode which covers the first protective film.