Patents by Inventor Takakazu Seki

Takakazu Seki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5466355
    Abstract: A mosaic target comprising a plurality of target block pieces of different kinds of materials selected from the group consisting of Ta, Mo, Ti, W, Zr, Nb and Si, and their alloys and compounds, said target block pieces being combined in a stripe pattern or in a radial pattern characterized in that said target block pieces have their abutting interfaces solid-phase bonded at a temperature no more than the melting points of the target block piece materials. A typical example is a Ta-Mo mosaic target. The solid-phase bonded mosaic target blank is machined to a target which is bonded to a backing plate. The solid-phase bonding produces a mosaic target of a unitary construction, eliminating gaps among the target block pieces without sacrificing the properties of the individual block pieces. Abnormal discharge owing to gaps or contamination of the resulting film by concurrent sputtering of the solder or the backing plate is avoided.
    Type: Grant
    Filed: February 22, 1995
    Date of Patent: November 14, 1995
    Assignee: Japan Energy Corporation
    Inventors: Tateo Ohhashi, Koichi Nakashima, Hideaki Fukuyo, Takakazu Seki
  • Patent number: 5415829
    Abstract: A method of manufacturing metal silicide targets or alloy targets for sputtering use comprises the steps of (a) mechanically alloying silicon and a metal to provide a metal silicide powder or mechanically alloying silicon and a plurality of metal powders to provide an alloy powder, (b) and then pressing the metal silicide powder or alloy powder. The invention also relates to the metal silicide targets or alloy targets so manufactured. In the mechanical alloying step, rapid and fine division and agglomeration of the mixed powder is repeated until the particles of the material powders are finely divided to a submicron level. They form aggregates tens of microns in diameter. The aggregates gradually take an equi-axed shape. Homogenization of the material powder mixture progresses to mixing on the atomic level, until alloying takes place.
    Type: Grant
    Filed: December 22, 1993
    Date of Patent: May 16, 1995
    Assignee: Nikko Kyodo Co., Ltd.
    Inventors: Tateo Ohhashi, Takakazu Seki, Takeo Okabe, Koichi Yasui, Hideaki Fukuyo
  • Patent number: 5135629
    Abstract: In a system for thin film deposition by vapor growth, the contamination of devices and the formation of particles in the deposited thin film inside the system are prevented by the provision therein of an anti-contamination means which is chosen from among (1) an electrolytic cop-per foil having a fine-grained thin layer of copper or/and copper oxide formed by copper plating on the matte surface of the copper foil, (2) an electrolytic copper foil having a fine-grained thin layer of copper or/and copper oxide formed by copper plating on the matte surface of the foil and coated with a material which is the same as or is harmless and similar to the material to be deposited as a thin film by vapor growth onto the substrate, (3) a corrugated metal foil, and (4) a metal foil formed with a plurality of irregularities by embossing.
    Type: Grant
    Filed: June 8, 1990
    Date of Patent: August 4, 1992
    Assignee: Nippon Mining Co., Ltd.
    Inventors: Susumi Sawada, Osamu Kanou, Hironori Wada, Junichi Anan, Takakazu Seki