Abstract: A measurement device includes a first light source configured to generate first light; a first beam splitter configured to split the first light into second light and third light; and a detector configured to receive signal light generated from a subject through irradiating the subject with the second light and the third light. The first light has a wavelength transmittable through a substrate. The second light is vertically incident on a surface of a first film formed on the subject. The third light is vertically incident on a rear surface of the substrate to be coaxial with the second light. A phase of transmitted light through the substrate is opposite to a phase of reflected light. An intensity of the transmitted light is equal to an intensity of the reflected light.

Abstract: According to one embodiment, a method for manufacturing a semiconductor device includes: preparing a substrate, the substrate including: a workpiece film; and a mask pattern formed on the workpiece film, the mask pattern including a light shielding layer that shields light; and etching the workpiece film exposed from the mask pattern, in which the etching of the workpiece film includes: irradiating a back surface of the substrate with light before the etching; observing first interference light generated by interference between first reflected light reflected by the back surface of the substrate and second reflected light transmitted through the substrate and reflected by a bottom surface of the workpiece film; observing second interference light generated by interference between the first reflected light and third reflected light transmitted through the substrate and the workpiece film and reflected without being transmitted through an upper surface of the workpiece film; calculating a thickness of the workp

Abstract: An apparatus includes a stage supporting a substrate with a material film on a first face from a second face side of the substrate. A light source generates a light beam. An optical system radiates the light beam to the substrate from the second face side. A detector detects a reflected light beam reflected from the substrate or the material film. A storage part stores therein reference spectrum waveforms generated in advance for shape parameters of the substrate or the material film with regard to the reflected light beam. An operation part compares a measured spectrum waveform obtained from an interference spectrum of the reflected light beam measured by the detector when the light beam is radiated with each of the reference spectrum waveforms to obtain a similar reference spectrum waveform that is one of the reference spectrum waveforms which is similar to the measured spectrum waveform.

Abstract: A measurement device includes: an X-ray irradiation section; an X-ray detection section configured to detect scattered X-rays generated from an object; and an analysis section configured to analyze diffraction images obtained through photoelectric conversion of the scattered X-rays and estimate a three-dimensional shape of the object. A recessed portion is formed in a first film from an opening portion in a second film formed on the first film. The analysis section estimates a three-dimensional shape of the object on the basis of the diffraction images acquired while an irradiation angle of the X-rays with respect to the object is changed and shape data obtained by measuring the object in advance. The shape data include a film thickness of the second film, a neck diameter, and a bottom diameter.

Abstract: According to one embodiment, there is provided an inspection device including a measurement unit and a controller. The measurement unit measures a physical quantity in accordance with a predetermined pattern for a sample with the predetermined pattern, and generates a first spectral pattern in accordance with a measurement result. The controller predicts a processed cross-sectional shape by applying a parameter to a shape function indicating an ion flux amount in accordance with an etching depth in a case where the predetermined pattern is processed in dry etching processing, determines a second spectral pattern in accordance with the processed cross-sectional shape that has been predicted, adjusts the parameter while comparing the first spectral pattern with the second spectral pattern, and reconstructs the processed cross-sectional shape of the sample in accordance with an adjustment result.

Abstract: A measurement device includes an analyzer configured to analyze a diffraction image of X-rays scattered from a subject; estimate a surface contour shape of a measurement area of the subject; extract feature data from shape information, and determine shape parameters for representing the surface contour shape; calculate a theoretical scattering intensity of each of the scattered X-rays when values of the shape parameters are changed; calculate a difference between a measured scattering intensity of each scattered X-ray and the corresponding theoretical scattering intensity, and generate a regression model of a relationship between a corresponding value of the shape parameter and the difference for each shape parameter; extract one shape parameter candidate value reducing the difference from the regression model, and calculate a theoretical scattering intensity of the shape parameter candidate value; and estimate the value of the shape parameter minimizing the difference while repeatedly changing the shape para

Abstract: A measurement apparatus is provided which includes a wafer stage having an upper surface on which a wafer to be measured is placed; a light source capable of illuminating the upper surface with predetermined light; a light detection portion configured to take an image of the wafer illuminated with the predetermined light by the light source; a polarization element provided between the light source and the wafer stage, or between the wafer stage and the light detection portion; and a controller. The controller takes a difference value between two signals that are obtained based on corresponding types of polarization states, in each of which a first and second element of a Stokes Vector are same, and thus measures an asymmetric structure within the wafer, based on the difference value.

Abstract: According to one embodiment, a value of a film thickness of a processing object disposed above a substrate is obtained. Then, a wavelength that provides a highest degree of intensity of signal light reflected when the signal light is incident onto the processing object having the value of the film thickness, based on wavelength selection reference information is selected. Then, a first instruction performing an alignment process to the substrate by use of signal light having a wavelength thus selected is generated. The wavelength selection reference information is information that includes a correlation between values of the film thickness of the processing object and degrees of intensity of the signal light, with respect to a plurality of wavelengths.

Abstract: A manufacturing method of a photomask according to the embodiment sets an exposure condition applied when a resist is formed into a three-dimensional target shape by using a photomask including a plurality of light-shielding areas. Subsequently, the method sets a hypothetical target shape obtained by correcting a target shape based on a development characteristic of the resist for the exposure condition. Subsequently, the method creates a pattern of the photomask corresponding to the hypothetical target shape. Subsequently, the method simulates a prediction shape of the resist when the pattern is used. Subsequently, the method calculates a cost function related to an error between the prediction shape and the hypothetical target shape. Subsequently, the method adjusts the pattern based on a result of the calculation of the cost function.

Abstract: According to one embodiment, a layout region of a mask pattern is divided into N (N is an integer of 2 or larger) units, a main pattern resolved by exposure light is arranged and sub patterns not resolved by the exposure light are arranged outside the main pattern such that distributions of attenuation amount of the exposure light in the divided layout regions are different.

Abstract: A manufacturing method of a photomask according to the embodiment sets an exposure condition applied when a resist is formed into a three-dimensional target shape by using a photomask including a plurality of light-shielding areas. Subsequently, the method sets a hypothetical target shape obtained by correcting a target shape based on a development characteristic of the resist for the exposure condition. Subsequently, the method creates a pattern of the photomask corresponding to the hypothetical target shape. Subsequently, the method simulates a prediction shape of the resist when the pattern is used. Subsequently, the method calculates a cost function related to an error between the prediction shape and the hypothetical target shape. Subsequently, the method adjusts the pattern based on a result of the calculation of the cost function.

Abstract: According to one embodiment, in a measurement apparatus, a controller acquires a first signal waveform, a second signal waveform, and a third signal waveform. Among mth diffraction light and ±nth diffraction light, the first signal waveform is related to spatial distribution of light intensity about first interference light by interference of the ±nth diffraction light. The second signal waveform is related to spatial distribution of light intensity about second interference light by interference of the mth diffraction light and the +nth diffraction light. The third signal waveform is related to spatial distribution of light intensity about third interference light by interference of the mth diffraction light and the ?nth diffraction light. The controller calculates a measurement error component based on a phase difference between the second signal waveform and the third signal waveform. The controller corrects the first signal waveform with using the calculated measurement error component.

Abstract: According to one embodiment, a layout region of a mask pattern is divided into N (N is an integer of 2 or larger) units, a main pattern resolved by exposure light is arranged and sub patterns not resolved by the exposure light are arranged outside the main pattern such that distributions of attenuation amount of the exposure light in the divided layout regions are different.

Abstract: According to one embodiment, a value of a film thickness of a processing object disposed above a substrate is obtained. Then, a wavelength that provides a highest degree of intensity of signal light reflected when the signal light is incident onto the processing object having the value of the film thickness, based on wavelength selection reference information is selected. Then, a first instruction performing an alignment process to the substrate by use of signal light having a wavelength thus selected is generated. The wavelength selection reference information is information that includes a correlation between values of the film thickness of the processing object and degrees of intensity of the signal light, with respect to a plurality of wavelengths.

Abstract: According to one embodiment, there is provided a mask set including a first mask and a second mask. The first mask includes a first device pattern and a first mark pattern. The first mark pattern is used for an inspection of a position of the first device pattern on a surface of the first mask. The second mask is used to perform multiple exposure on a substrate together with the first mask. The second mask includes a second device pattern and a second mark pattern. The second mark pattern is used for an inspection of a position of the second device pattern on a surface of the second mask. The second mark pattern includes a pattern corresponding to a pattern obtained by inverting the first mark pattern.

Abstract: A microstructure body according to an embodiment includes a stacked body. The stacked body includes a plurality of unit structure bodies stacked periodically along a first direction. A configuration of an end portion of the stacked body in a second direction is a stairstep configuration including terraces formed every unit structure body. The second direction intersects the first direction. A first distance in a third direction between end edges of two of the unit structure bodies facing the third direction is shorter than a second distance in the second direction between end edges of the two of the unit structure bodies facing the second direction. The third direction intersects both the first direction and the second direction.

Abstract: According to one embodiment, in a measurement apparatus, a controller acquires a first signal waveform, a second signal waveform, and a third signal waveform. Among mth diffraction light and ±nth diffraction light, the first signal waveform is related to spatial distribution of light intensity about first interference light by interference of the ±nth diffraction light. The second signal waveform is related to spatial distribution of light intensity about second interference light by interference of the mth diffraction light and the +nth diffraction light. The third signal waveform is related to spatial distribution of light intensity about third interference light by interference of the mth diffraction light and the ?nth diffraction light. The controller calculates a measurement error component based on a phase difference between the second signal waveform and the third signal waveform. The controller corrects the first signal waveform with using the calculated measurement error component.

Abstract: A microstructure body according to an embodiment includes a stacked body. The stacked body includes a plurality of unit structure bodies stacked periodically along a first direction. A configuration of an end portion of the stacked body in a second direction is a stairstep configuration including terraces formed every unit structure body. The second direction intersects the first direction. A first distance in a third direction between end edges of two of the unit structure bodies facing the third direction is shorter than a second distance in the second direction between end edges of the two of the unit structure bodies facing the second direction. The third direction intersects both the first direction and the second direction.

Abstract: According to one embodiment, there is provided a mask set including a first mask and a second mask. The first mask includes a first device pattern and a first mark pattern. The first mark pattern is used for an inspection of a position of the first device pattern on a surface of the first mask. The second mask is used to perform multiple exposure on a substrate together with the first mask. The second mask includes a second device pattern and a second mark pattern. The second mark pattern is used for an inspection of a position of the second device pattern on a surface of the second mask. The second mark pattern includes a pattern corresponding to a pattern obtained by inverting the first mark pattern.

Abstract: According to one embodiment, a method for producing a mask layout of an exposure mask for forming wiring of an integrated circuit device, includes estimating shape of the wiring formed based on an edge of a pattern included in an initial layout of the exposure mask. The method includes modifying shape of the edge if the estimated shape of the wiring does not satisfy a requirement.