Abstract: According to one embodiment, there is provided an inspection device including a measurement unit and a controller. The measurement unit measures a physical quantity in accordance with a predetermined pattern for a sample with the predetermined pattern, and generates a first spectral pattern in accordance with a measurement result. The controller predicts a processed cross-sectional shape by applying a parameter to a shape function indicating an ion flux amount in accordance with an etching depth in a case where the predetermined pattern is processed in dry etching processing, determines a second spectral pattern in accordance with the processed cross-sectional shape that has been predicted, adjusts the parameter while comparing the first spectral pattern with the second spectral pattern, and reconstructs the processed cross-sectional shape of the sample in accordance with an adjustment result.

Abstract: A measurement device includes an analyzer configured to analyze a diffraction image of X-rays scattered from a subject; estimate a surface contour shape of a measurement area of the subject; extract feature data from shape information, and determine shape parameters for representing the surface contour shape; calculate a theoretical scattering intensity of each of the scattered X-rays when values of the shape parameters are changed; calculate a difference between a measured scattering intensity of each scattered X-ray and the corresponding theoretical scattering intensity, and generate a regression model of a relationship between a corresponding value of the shape parameter and the difference for each shape parameter; extract one shape parameter candidate value reducing the difference from the regression model, and calculate a theoretical scattering intensity of the shape parameter candidate value; and estimate the value of the shape parameter minimizing the difference while repeatedly changing the shape para

Abstract: A measurement apparatus is provided which includes a wafer stage having an upper surface on which a wafer to be measured is placed; a light source capable of illuminating the upper surface with predetermined light; a light detection portion configured to take an image of the wafer illuminated with the predetermined light by the light source; a polarization element provided between the light source and the wafer stage, or between the wafer stage and the light detection portion; and a controller. The controller takes a difference value between two signals that are obtained based on corresponding types of polarization states, in each of which a first and second element of a Stokes Vector are same, and thus measures an asymmetric structure within the wafer, based on the difference value.

Abstract: According to one embodiment, a value of a film thickness of a processing object disposed above a substrate is obtained. Then, a wavelength that provides a highest degree of intensity of signal light reflected when the signal light is incident onto the processing object having the value of the film thickness, based on wavelength selection reference information is selected. Then, a first instruction performing an alignment process to the substrate by use of signal light having a wavelength thus selected is generated. The wavelength selection reference information is information that includes a correlation between values of the film thickness of the processing object and degrees of intensity of the signal light, with respect to a plurality of wavelengths.

Abstract: A manufacturing method of a photomask according to the embodiment sets an exposure condition applied when a resist is formed into a three-dimensional target shape by using a photomask including a plurality of light-shielding areas. Subsequently, the method sets a hypothetical target shape obtained by correcting a target shape based on a development characteristic of the resist for the exposure condition. Subsequently, the method creates a pattern of the photomask corresponding to the hypothetical target shape. Subsequently, the method simulates a prediction shape of the resist when the pattern is used. Subsequently, the method calculates a cost function related to an error between the prediction shape and the hypothetical target shape. Subsequently, the method adjusts the pattern based on a result of the calculation of the cost function.

Abstract: According to one embodiment, a layout region of a mask pattern is divided into N (N is an integer of 2 or larger) units, a main pattern resolved by exposure light is arranged and sub patterns not resolved by the exposure light are arranged outside the main pattern such that distributions of attenuation amount of the exposure light in the divided layout regions are different.

Abstract: A manufacturing method of a photomask according to the embodiment sets an exposure condition applied when a resist is formed into a three-dimensional target shape by using a photomask including a plurality of light-shielding areas. Subsequently, the method sets a hypothetical target shape obtained by correcting a target shape based on a development characteristic of the resist for the exposure condition. Subsequently, the method creates a pattern of the photomask corresponding to the hypothetical target shape. Subsequently, the method simulates a prediction shape of the resist when the pattern is used. Subsequently, the method calculates a cost function related to an error between the prediction shape and the hypothetical target shape. Subsequently, the method adjusts the pattern based on a result of the calculation of the cost function.

Abstract: According to one embodiment, in a measurement apparatus, a controller acquires a first signal waveform, a second signal waveform, and a third signal waveform. Among mth diffraction light and ±nth diffraction light, the first signal waveform is related to spatial distribution of light intensity about first interference light by interference of the ±nth diffraction light. The second signal waveform is related to spatial distribution of light intensity about second interference light by interference of the mth diffraction light and the +nth diffraction light. The third signal waveform is related to spatial distribution of light intensity about third interference light by interference of the mth diffraction light and the ?nth diffraction light. The controller calculates a measurement error component based on a phase difference between the second signal waveform and the third signal waveform. The controller corrects the first signal waveform with using the calculated measurement error component.

Abstract: According to one embodiment, a layout region of a mask pattern is divided into N (N is an integer of 2 or larger) units, a main pattern resolved by exposure light is arranged and sub patterns not resolved by the exposure light are arranged outside the main pattern such that distributions of attenuation amount of the exposure light in the divided layout regions are different.

Abstract: According to one embodiment, a value of a film thickness of a processing object disposed above a substrate is obtained. Then, a wavelength that provides a highest degree of intensity of signal light reflected when the signal light is incident onto the processing object having the value of the film thickness, based on wavelength selection reference information is selected. Then, a first instruction performing an alignment process to the substrate by use of signal light having a wavelength thus selected is generated. The wavelength selection reference information is information that includes a correlation between values of the film thickness of the processing object and degrees of intensity of the signal light, with respect to a plurality of wavelengths.

Abstract: According to one embodiment, there is provided a mask set including a first mask and a second mask. The first mask includes a first device pattern and a first mark pattern. The first mark pattern is used for an inspection of a position of the first device pattern on a surface of the first mask. The second mask is used to perform multiple exposure on a substrate together with the first mask. The second mask includes a second device pattern and a second mark pattern. The second mark pattern is used for an inspection of a position of the second device pattern on a surface of the second mask. The second mark pattern includes a pattern corresponding to a pattern obtained by inverting the first mark pattern.

Abstract: A microstructure body according to an embodiment includes a stacked body. The stacked body includes a plurality of unit structure bodies stacked periodically along a first direction. A configuration of an end portion of the stacked body in a second direction is a stairstep configuration including terraces formed every unit structure body. The second direction intersects the first direction. A first distance in a third direction between end edges of two of the unit structure bodies facing the third direction is shorter than a second distance in the second direction between end edges of the two of the unit structure bodies facing the second direction. The third direction intersects both the first direction and the second direction.

Abstract: According to one embodiment, in a measurement apparatus, a controller acquires a first signal waveform, a second signal waveform, and a third signal waveform. Among mth diffraction light and ±nth diffraction light, the first signal waveform is related to spatial distribution of light intensity about first interference light by interference of the ±nth diffraction light. The second signal waveform is related to spatial distribution of light intensity about second interference light by interference of the mth diffraction light and the +nth diffraction light. The third signal waveform is related to spatial distribution of light intensity about third interference light by interference of the mth diffraction light and the ?nth diffraction light. The controller calculates a measurement error component based on a phase difference between the second signal waveform and the third signal waveform. The controller corrects the first signal waveform with using the calculated measurement error component.

Abstract: According to one embodiment, there is provided a mask set including a first mask and a second mask. The first mask includes a first device pattern and a first mark pattern. The first mark pattern is used for an inspection of a position of the first device pattern on a surface of the first mask. The second mask is used to perform multiple exposure on a substrate together with the first mask. The second mask includes a second device pattern and a second mark pattern. The second mark pattern is used for an inspection of a position of the second device pattern on a surface of the second mask. The second mark pattern includes a pattern corresponding to a pattern obtained by inverting the first mark pattern.

Abstract: A microstructure body according to an embodiment includes a stacked body. The stacked body includes a plurality of unit structure bodies stacked periodically along a first direction. A configuration of an end portion of the stacked body in a second direction is a stairstep configuration including terraces formed every unit structure body. The second direction intersects the first direction. A first distance in a third direction between end edges of two of the unit structure bodies facing the third direction is shorter than a second distance in the second direction between end edges of the two of the unit structure bodies facing the second direction. The third direction intersects both the first direction and the second direction.

Abstract: According to one embodiment, a method for producing a mask layout of an exposure mask for forming wiring of an integrated circuit device, includes estimating shape of the wiring formed based on an edge of a pattern included in an initial layout of the exposure mask. The method includes modifying shape of the edge if the estimated shape of the wiring does not satisfy a requirement.

Abstract: In general, according to one embodiment, a pattern generating method evaluates an amount of flare generated through a mask during an EUV exposure; calculates optimal coverage of a mask pattern for enhancing uniformity of the amount of flare in an exposure region by applying an optimization algorithm; and generates a dummy pattern of the mask based upon the coverage of the mask pattern.

Abstract: According to one embodiment, a semiconductor device includes a plurality of wires arranged in parallel at a predetermined pitch, a plurality of first contacts that are each connected to an odd-numbered wire among the wires and are arranged in parallel in an orthogonal direction with respect to a wiring direction of the wires, and a plurality of second contacts that are each connected to an even-numbered wire among the wires and are arranged in parallel in an orthogonal direction with respect to the wiring direction of the wires in such a way as to be offset from the first contacts in the wiring direction of the wires, in which the first contacts are offset from the second contacts by a pitch of the wires in an orthogonal direction with respect to the wiring direction of the wires.

Abstract: According to one embodiment, a semiconductor device includes a plurality of wires arranged in parallel at a predetermined pitch, a plurality at first contacts that are each connected to an odd-numbered wire among the wires and are arranged in parallel in an orthogonal direction with respect to a wiring direction of the wires, and a plurality of second contacts that are each connected to an even-numbered wire among the wires and are arranged in parallel in an orthogonal direction with respect to the wiring direction of the wires in such a way as to be offset from the first contacts in the wiring direction of the wires, in which the first contacts are offset from the second contacts by a pitch of the wires in an orthogonal direction with respect to the wiring direction of the wires.

Abstract: According to one embodiment, a method for producing a mask layout of an exposure mask for forming wiring of an integrated circuit device, includes estimating shape of the wiring formed based on an edge of a pattern included in an initial layout of the exposure mask. The method includes modifying shape of the edge if the estimated shape of the wiring does not satisfy a requirement.