Abstract: A fuel hose has an inner layer in a tubular shape and an outer layer provided in contact with an outer circumferential surface of the inner layer, and the inner layer is composed of a crosslinked body of a rubber composition containing the following (A) to (E), and the outer layer is composed of a crosslinked body of a rubber composition containing the following (F) to (G): (A) polyol-crosslinked fluororubber (B) polyol crosslinking agent (C) calcium hydroxide (D) triallyl isocyanurate (E) peroxide crosslinking agent (F) hydrin rubber (G) monoglyceride having an aliphatic hydrocarbon group having 10 or more and 22 or less carbon atoms.

Abstract: According to a drive control signal for controlling a semiconductor element to be turned on and off, a current output circuit supplies an output current for charging a gate when the semiconductor element is turned on. A Miller voltage detection circuit outputs a detection signal for a constant voltage period during which a temporal change rate of a gate voltage is lower than a threshold value. Based on a drive control signal and a detection signal, a signal generation circuit generates a capability change signal for controlling a current output capability of the current output circuit. The signal generation circuit generates the capability change signal such that the current output capability is increased upon detection of the constant voltage period by the Miller voltage detection circuit, after the semiconductor element is instructed to be turned on by a level change of the drive control signal.

Abstract: According to a drive control signal for controlling a semiconductor element to be turned on and off, a current output circuit supplies an output current for charging a gate when the semiconductor element is turned on. A Miller voltage detection circuit outputs a detection signal for a constant voltage period during which a temporal change rate of a gate voltage is lower than a threshold value. Based on a drive control signal and a detection signal, a signal generation circuit generates a capability change signal for controlling a current output capability of the current output circuit. The signal generation circuit generates the capability change signal such that the current output capability is increased upon detection of the constant voltage period by the Miller voltage detection circuit, after the semiconductor element is instructed to be turned on by a level change of the drive control signal.

Abstract: A drive device to drive a semiconductor element includes: an identification signal generating circuit generating an identification signal depending on a type of an input error signal; a protection operation signal generating circuit generating a protection operation signal having a pulse width equal to that of one of the error signal and the identification signal having a longer pulse width; an identification signal terminal inputting and outputting the identification signal; a protection operation signal terminal inputting and outputting the protection operation signal; and a protection circuit performing an error protection operation depending on an own-phase protection operation signal generated by the protection operation signal generating circuit and an other-phase protection operation signal input through the protection operation signal terminal.

Abstract: A fixture for piping includes a fitting. The fitting includes a base, and a locking tab. The locking tab has an end fixed onto the base, and one or more folding sections. The locking tab is formed as a folding configuration folded twice or more, and is further formed so as to be inclinable by elastic deformation about the end and the one or more folding sections serving as a fulcrum, respectively, thereby being locked up with a hole in a vehicle body.

Abstract: A drive device to drive a semiconductor element includes: an identification signal generating circuit generating an identification signal depending on a type of an input error signal; a protection operation signal generating circuit generating a protection operation signal having a pulse width equal to that of one of the error signal and the identification signal having a longer pulse width; an identification signal terminal inputting and outputting the identification signal; a protection operation signal terminal inputting and outputting the protection operation signal; and a protection circuit performing an error protection operation depending on an own-phase protection operation signal generated by the protection operation signal generating circuit and an other-phase protection operation signal input through the protection operation signal terminal.

Abstract: A drive circuit of the present invention, which drives a switching device in response to a control signal, includes: a current mirror circuit including an output transistor connected to a control electrode of the switching device and a reference transistor that is connected to the output transistor in a current mirror manner and supplies a mirror current to the output transistor; and a potential change circuit that is connected to the reference transistor and changes a control potential of the output transistor from a potential during mirror operation of the current mirror circuit.

Abstract: A semiconductor driving device includes a negative surge detection circuit and a level shifter circuit. The negative surge detection circuit detects whether the negative surge occurs at a connection point between a P-side SW element and N-side SW element. The level shifter circuit maintains a driving voltage used in driving the P-side SW element upon the negative surge detection circuit detecting occurrence of the negative surge.

Abstract: A drive circuit of the present invention, which drives a switching device in response to a control signal, includes: a current mirror circuit including an output transistor connected to a control electrode of the switching device and a reference transistor that is connected to the output transistor in a current mirror manner and supplies a mirror current to the output transistor; and a potential change circuit that is connected to the reference transistor and changes a control potential of the output transistor from a potential during mirror operation of the current mirror circuit.

Abstract: A fixture for piping includes a fitting. The fitting includes a base, and a locking tab. The locking tab has an end fixed onto the base, and one or more folding sections. The locking tab is formed as a folding configuration folded twice or more, and is further formed so as to be inclinable by elastic deformation about the end and the one or more folding sections serving as a fulcrum, respectively, thereby being locked up with a hole in a vehicle body.

Abstract: A semiconductor driving device includes a negative surge detection circuit and a level shifter circuit. The negative surge detection circuit detects whether the negative surge occurs at a connection point between a P-side SW element and N-side SW element. The level shifter circuit maintains a driving voltage used in driving the P-side SW element upon the negative surge detection circuit detecting occurrence of the negative surge.

Abstract: A voltage conversion mask signal generation circuit generates a first main signal and a first mask signal by converting an output signal of the first transistor to a low-side voltage, and generating a second main signal and a second mask signal by converting an output signal of the second transistor to a low-side voltage. A mask signal generation circuit generating a third mask signal with higher sensitivity than the first and second mask signals with respect to a fluctuation in the high-side reference potential. A mask logical circuit generating a fourth mask signal by performing a AND operation between the first mask signal and the second mask signal, and masking the first and second main signals with the third and fourth mask signals; and a SR flip flop circuit generating the output signal from the masked first and second main signals.

Abstract: A voltage conversion mask signal generation circuit generates a first main signal and a first mask signal by converting an output signal of the first transistor to a low-side voltage, and generating a second main signal and a second mask signal by converting an output signal of the second transistor to a low-side voltage. A mask signal generation circuit generating a third mask signal with higher sensitivity than the first and second mask signals with respect to a fluctuation in the high-side reference potential. A mask logical circuit generating a fourth mask signal by performing a AND operation between the first mask signal and the second mask signal, and masking the first and second main signals with the third and fourth mask signals; and a SR flip flop circuit generating the output signal from the masked first and second main signals.