Abstract: A composition for forming an anti-reflection film for use in forming an anti-reflection film on a resist film is provided, the composition for forming an anti-reflection film being easily handled, and capable of forming an anti-reflection film having superior optical characteristics similarly to anti-reflection films formed using PFOS. A composition for forming an anti-reflection film to be provided on a resist film which includes a certain fluorine compound. This composition for forming an anti-reflection film can form an anti-reflection film having superior optical characteristics since the certain fluorine compound contributes to improvement of the optical characteristics of the anti-reflection film.

Abstract: The present invention provides a positive resist composition and a resist pattern forming method that are capable of forming a resist pattern with a reduced level of roughness. The positive resist composition includes the compound represented by the general formula (I) below. The present invention also provides the resist pattern forming method using the positive resist composition above. [wherein, in formula (I), R11 and R12 each represents, independently, an alkyl group of 1 to 10 carbon atoms or an aromatic hydrocarbon group, and may include a hetero atom in the structure thereof; R21 to R24 each represents, independently, a hydrogen atom or an acid dissociable, dissolution inhibiting group, and two of the R21 to R24 represents a hydrogen atom and the others represents an acid dissociable, dissolution inhibiting group; X is a group represented by general formulas (Ia) or (Ib) below].

Abstract: The anti-reflection film forming material according to the present invention includes (a) a water soluble resin having a vinyl acetate constituent unit, and (b) a compound having a constituent unit represented by the following general formula. Wherein, R1 and R2 represent a direct bond or a methylene chain; R3 and R4 represent a hydrogen atom, an alkyl group having 1 to 10 carbon atoms, or a group represented by —(CH2)n—O—R5—R6; and at least one of R3 and R4 is a group represented by —(CH2)n—O—R5—R6, wherein: R5 represents a direct bond or an alkylene chain having 1 to 10 carbon atoms which may be interrupted with —O—; R6 represents an alkyl group having 1 to 10 carbon atoms in which a portion or all hydrogen atoms are substituted with a fluorine atom; and n represents an integer of 0 to 10. Wherein, the total number of carbon atoms present in R1 and R2 is 1 or 2.

Abstract: A positive resist composition includes a base material component (A) which exhibits increased alkali solubility under an action of an acid, and an acid generator component (B) which generates an acid upon exposure, wherein the base material component (A) contains a compound (A1) in which phenolic hydroxyl groups in a polyhydric phenol compound (a) containing two or more phenolic hydroxyl groups and having a molecular weight of 300 to 2,500 are protected with acid dissociable, dissolution inhibiting groups, and the compound (A1) exhibits a standard deviation (sn) of the number of protective groups per molecule of less than 1, or exhibits a standard deviation (sp) of a protection ratio (mol %) per molecule of less than 16.7.

Abstract: A composition for forming an anti-reflection film on a resist film is provided, which is superior in handling characteristics, and is not accompanied by generation of deposits and the like after forming the film. A composition for forming an anti-reflection film to be provided on a resist film is provided, which includes at least a certain fluorochemical surfactant, and a certain water soluble film forming component. The composition for forming an anti-reflection film can be easily handled, has no adverse effect on health or the environment, and also avoids the generation of deposits and the like even after forming an anti-reflection film.

Abstract: A positive resist composition having excellent size controllability, and a resist pattern forming method are provided. This positive resist composition contains a resin component (A) comprising an alkali soluble constituent unit (a1) which comprises a constituent unit (a11) derived from (?-methyl)hydroxystyrene, and a constituent unit (a2) which has an acid dissociable dissolution inhibiting group including an acid dissociable dissolution inhibiting group (II) represented by the following general formula (II) and/or a specific chain acid dissociable dissolution inhibiting group (III); an acid generator component (B) which generates an acid upon exposure; and preferably contains an aromatic amine (C).

Abstract: There are provided a resist composition capable of forming a resist pattern with high sensitivity and high resolution, and a method of forming such a resist pattern. The negative resist composition includes an alkali soluble base component (A), an acid generator component (B) that generates acid by exposure, and a cross-linking agent component (C), wherein the base component (A) includes a polyhydric phenol compound (A1) containing two or more phenolic hydroxyl groups represented by the following general formula (I), with a molecular weight of 300 to 2500.

Abstract: A positive resist composition of the present invention includes a resin component (A) which displays increased alkali solubility under the action of an acid, and an acid generator component (B) which generates an acid upon exposure, wherein the resin component (A) includes a structural unit (a0) containing a carboxyl group, and at least one structural unit (a1) selected from the group consisting of a structural unit represented by a general formula (a1-2) and a structural unit represented by a general formula (a1-4) shown below: (in the formula, Y represents an aliphatic cyclic group or a lower alkyl group; n represents an integer from 0 to 3; m represents 0 or 1; R represents a hydrogen atom, a halogen atom, a lower alkyl group, or a halogenated lower alkyl group; and R1? and R2? each independently represents a hydrogen atom or a lower alkyl group of 1 to 5 carbon atoms.).

Abstract: A composition for forming an anti-reflection film on a resist film is provided, which is superior in handling characteristics, and is not accompanied by generation of deposits and the like after forming the film. A composition for forming an anti-reflection film to be provided on a resist film is provided, which includes at least a certain fluorochemical surfactant, and a certain water soluble film forming component. The composition for forming an anti-reflection film can be easily handled, has no adverse effect on health or the environment, and also avoids the generation of deposits and the like even after forming an anti-reflection film.

Abstract: A composition for forming an anti-reflection film for use in forming an anti-reflection film on a resist film is provided, the composition for forming an anti-reflection film being easily handled, and capable of forming an anti-reflection film having superior optical characteristics similarly to anti-reflection films formed using PFOS. A composition for forming an anti-reflection film to be provided on a resist film which includes a certain fluorine compound. This composition for forming an anti-reflection film can form an anti-reflection film having superior optical characteristics since the certain fluorine compound contributes to improvement of the optical characteristics of the anti-reflection film.

Abstract: There are provided a resist composition capable of forming a resist pattern with high sensitivity and high resolution, and a method of forming such a resist pattern. The negative resist composition includes an alkali soluble base component (A), an acid generator component (B) that generates acid by exposure, and a cross-linking agent component (C), wherein the base component (A) includes a polyhydric phenol compound (A1) containing two or more phenolic hydroxyl groups represented by the following general formula (I), with a molecular weight of 300 to 2500.

Abstract: The anti-reflection film forming material according to the present invention includes (a) a water soluble resin having a vinyl acetate constituent unit, and (b) a compound having a constituent unit represented by the following general formula. Wherein, R1 and R2 represent a direct bond or a methylene chain; R3 and R4 represent a hydrogen atom, an alkyl group having 1 to 10 carbon atoms, or a group represented by —(CH2)n—O—R5—R6; and at least one of R3 and R4 is a group represented by —(CH2)n—O—R5—R6, wherein: R5 represents a direct bond or an alkylene chain having 1 to 10 carbon atoms which may be interrupted with —O—; R6 represents an alkyl group having 1 to 10 carbon atoms in which a portion or all hydrogen atoms are substituted with a fluorine atom; and n represents an integer of 0 to 10. Wherein, the total number of carbon atoms present in R1 and R2 is 1 or 2.

Abstract: A positive resist composition of the present invention includes a resin component (A) which displays increased alkali solubility under the action of an acid, and an acid generator component (B) which generates an acid upon exposure, wherein the resin component (A) includes a structural unit (a0) containing a carboxyl group, and at least one structural unit (a1) selected from the group consisting of a structural unit represented by a general formula (a1-2) and a structural unit represented by a general formula (a1-4) shown below: (in the formula, Y represents an aliphatic cyclic group or a lower alkyl group; n represents an integer from 0 to 3; m represents 0 or 1; R represents a hydrogen atom, a halogen atom, a lower alkyl group, or a halogenated lower alkyl group; and R1? and R2? each independently represents a hydrogen atom or a lower alkyl group of 1 to 5 carbon atoms.).

Abstract: The present invention provides a positive resist composition and a resist pattern forming method that are capable of forming a resist pattern with a reduced level of roughness. The positive resist composition includes the compound represented by the general formula (I) below. The present invention also provides the resist pattern forming method using the positive resist composition above. [wherein, in formula (I), R11 and R12 each represents, independently, an alkyl group of 1 to 10 carbon atoms or an aromatic hydrocarbon group, and may include a hetero atom in the structure thereof; R21 to R24 each represents, independently, a hydrogen atom or an acid dissociable, dissolution inhibiting group, and two of the R21 to R24 represents a hydrogen atom and the others represents an acid dissociable, dissolution inhibiting group; X is a group represented by general formulas (Ia) or (Ib) below].

Abstract: A positive resist composition includes a base material component (A) which exhibits increased alkali solubility under an action of an acid, and an acid generator component (B) which generates an acid upon exposure, wherein the base material component (A) contains a compound (A1) in which phenolic hydroxyl groups in a polyhydric phenol compound (a) containing two or more phenolic hydroxyl groups and having a molecular weight of 300 to 2,500 are protected with acid dissociable, dissolution inhibiting groups, and the compound (A1) exhibits a standard deviation (sn) of the number of protective groups per molecule of less than 1, or exhibits a standard deviation (sp) of a protection ratio (mol %) per molecule of less than 16.7.

Abstract: A positive resist composition having excellent size controllability, and a resist pattern forming method are provided. This positive resist composition contains a resin component (A) comprising an alkali soluble constituent unit (a1) which comprises a constituent unit (a11) derived from (?-methyl)hydroxystyrene, and a constituent unit (a2) which has an acid dissociable dissolution inhibiting group including an acid dissociable dissolution inhibiting group (II) represented by the following general formula (II) and/or a specific chain acid dissociable dissolution inhibiting group (III); an acid generator component (B) which generates an acid upon exposure; and preferably contains an aromatic amine (C).

Abstract: Disclosed is a positive resist composition which can provide a positive resist composition and a resist pattern forming method, capable of forming a high resolution pattern with reduce LER, the positive resist composition comprising a resin component (A) which has acid dissociable, dissolution inhibiting groups and exhibits increased alkali solubility under the action of an acid, and an acid generator component (B) which generates an acid under exposure, wherein the resin component (A) contains a polymer compound (A1) having a structural unit (a1) derived from hydroxystyrene and a structural unit (a2) derived from an acrylate ester having acid dissociable, dissolution inhibiting groups, a fluorine atom or a fluorinated lower alkyl group being bonded at the ?-position.

Abstract: In a resist composition for supercritical development process, a development process is carried out by supercritical development process without alkali development process, and includes a base resin which is not removed by said supercritical developer in the presence of acid (A) and an acid generator which generates an acid upon activation by light or electromagnetic waves (B).

Abstract: The photoresist composition is formed by including the fullerene derivative (A) having two or more malonic ester residues. Preferably, the malonic ester residue is, a group is preferably expressed by the general formula (1) below. In the formula (1), R1 and R2 independently represent an alkyl group, which may be identical or different from each other. The alkyl group is a normal or branched chain, or cyclic alkyl group having 1 to 10 carbons, and n is an integer from 2 to 10.

Abstract: There is provided a negative photoresist composition, which is used in a method of forming a pattern in which an underlayer film is provided on a substrate, a photoresist film formed from the negative photoresist composition is provided on top of the underlayer film, the photoresist film is selectively exposed, and the underlayer film and the photoresist film are then simultaneously subjected to a developing treatment, and which enables favorable resolution to be achieved. This composition includes (A) an alkali-soluble resin, (B) an acid generator that generates acid on irradiation, and (C) a cross-linking agent, and the acid generator (B) includes an onium salt containing a cation with no hydrophilic groups.