Abstract: A control device for a vehicle headlight is a control device that controls radiation of light from the vehicle headlight, and includes a radiation controller that causes the vehicle headlight to radiate pattern light, which includes a first pattern, to a marginal portion that exceeds a portion corresponding to a vehicle width of the vehicle.

Abstract: Provided is a specific object detection apparatus capable of detecting a specific object even when a self-vehicle is positioned at a distance from the specific object during bad weather.

Abstract: The present invention provides a peptide selected from the following (i) and (ii): (i) a peptide having the amino acid sequence represented by SEQ ID NO: 1 in the Sequence Listing; and (ii) a peptide having an amino acid sequence derived from the amino acid sequence represented by SEQ ID NO: 1 in the Sequence Listing by the conservative amino acid substitution, deletion, addition, or insertion of 1 to 28 (inclusive) amino acids except at the 1st Xaa to the 11th Xaa counting from the amino terminus.

Abstract: It is intended to provide a therapeutic and/or prophylactic agent for transplant rejections, immunological diseases, allergic diseases, inflammatory diseases, thrombosis, cancers, etc., targeting human Orai1. The present invention provides, for example, a pharmaceutical composition comprising an antibody that specifically recognizes human Orai1 and has the activity of inhibiting human T cell activation.

Abstract: The present invention provides an antibody which binds to a fibroblast growth factor receptor.

Abstract: The present invention provides a peptide library comprising a plurality of mutant peptides based on the extracellular binding domain of the TACI protein. The mutant peptides of the library have the capacity to bind to target molecules other than the endogenous TACI ligands. The present invention further provides a peptide library comprising a plurality of mutant peptides each comprising an amino acid sequence of SEQ ID NO: 1 in the Sequence Listing.

Abstract: The present invention provides an antibody which binds to a fibroblast growth factor receptor.

Abstract: Provided is a pharmaceutical composition for the treatment and/or prophylaxis of abnormal bone metabolism targeting a protein encoded by a gene strongly expressed in osteoclasts. Specifically provided is a pharmaceutical composition containing an antibody which specifically recognizes human Siglec-15 and has an activity of inhibiting osteoclast formation, and the like.

Abstract: The present invention provides an antibody which binds to a fibroblast growth factor receptor.

Abstract: The present invention provides an antibody which binds to a fibroblast growth factor receptor.

Abstract: Provided is a pharmaceutical composition for the treatment and/or prophylaxis of abnormal bone metabolism targeting a protein encoded by a gene strongly expressed in osteoclasts. Specifically provided is a pharmaceutical composition containing an antibody which specifically recognizes human Siglec-15 and has an activity of inhibiting osteoclast formation, and the like.

Abstract: The present invention provides an antibody that recognizes a polypeptide comprising the amino acid sequence represented by SEQ ID NO: 15 in the Sequence Listing and has an anti-arthritic function, or a functional fragment thereof.

Abstract: The present invention provides a peptide selected from the following (i) and (ii): (i) a peptide having the amino acid sequence represented by SEQ ID NO: 1 in the Sequence Listing; and (ii) a peptide having an amino acid sequence derived from the amino acid sequence represented by SEQ ID NO: 1 in the Sequence Listing by the conservative amino acid substitution, deletion, addition, or insertion of 1 to (inclusive) amino acids except at the 1st Xaa to the 11th Xaa counting from the amino terminus.

Abstract: (Problem) To provide a method for producing silicon nitride films by vapor deposition that, while employing trisilylamine as precursor, can produce silicon nitride films that exhibit excellent film properties and can do so at relatively low temperatures and relatively high growth rates. (Solution) Method for producing silicon nitride film, said method being characterized by feeding gaseous trisilylamine and gaseous nitrogen source comprising at least two amine-type compounds selected from amine-type compounds with formula (1) NR1R2R3 (R1, R2, and R3 are each independently selected from hydrogen and C1-6 hydrocarbyl) into a reaction chamber that holds at least one substrate and forming silicon nitride film on said at least one substrate by reacting the trisilylamine and said nitrogen source.

Abstract: A method of cleaning a film-forming apparatus to remove a silicon-based material deposited on a constituent member of the film-forming apparatus after being used to form thin films includes introducing a first gas including fluorine gas and a second gas including carbon monoxide gas into the film-forming apparatus, and heating the constituent member. The constituent member includes quartz or silicon carbide and the silicon-based material includes silicon nitride, or the constituent member includes silicon carbide and the silicon-based material includes silicon oxide.

Abstract: (Problem) To provide a method for producing silicon nitride films by vapor deposition that, while employing trisilylamine as precursor, can produce silicon nitride films that exhibit excellent film properties and can do so at relatively low temperatures and relatively high growth rates. (Solution) Method for producing silicon nitride film, said method being characterized by feeding gaseous trisilylamine and gaseous nitrogen source comprising at least two amine-type compounds selected from amine-type compounds with formula (1) NR1R2R3 (R1, R2, and R3 are each independently selected from hydrogen and C1-6 hydrocarbyl) into a reaction chamber that holds at least one substrate and forming silicon nitride film on said at least one substrate by reacting the trisilylamine and said nitrogen source.

Abstract: Silicon nitride film is formed on a silicon wafer mounted in a boat in an LPCVD tool by feeding a silicon source (SiH2Cl2, SiCl4, Si2Cl6, etc.) from an injector and feeding a mixed gas of monomethylamine (CH3NH2) and ammonia (NH3) as the nitrogen source from an injector. This addition of monomethylamine to the source substances for film production makes it possible to provide an improved film quality and improved leakage characteristics even at low temperatures (450-600° C.).

Abstract: Silicon nitride film is formed on substrate (112) by feeding trisilylamine and ammonia into a CVD reaction chamber (11) that contains a substrate (112). The ammonia gas/trisilylamine gas flow rate ratio is set to a value of at least about 10 and/or the thermal CVD reaction is run at a temperature no greater than about 600° C. Silicon oxynitride is obtained by introducing an oxygen source gas into the CVD reaction chamber (11). This method avoids the production of ammonium chloride and/or the incorporation of carbonaceous contaminants which are detrimental to the quality of the deposited film.

Abstract: Silicon nitride film is formed on substrate by feeding trisilylamine and ammonia into a CVD reaction chamber that contains a substrate. The ammonia gas/trisilylamine gas flow rate ratio is set to a value of at least about 10 and/or the thermal CVD reaction is run at a temperature no greater than about 600° C. Silicon oxynitride is obtained by introducing an oxygen source gas into the CVD reaction chamber. This method avoids the production of ammonium chloride and/or the incorporation of carbonaceous contaminants which are detrimental to the quality of the deposited film.

Abstract: Methods for the production of silicon nitride films by vapor-phase growth. A hydrazine gas and at least one precursor gas are fed into a reaction chamber containing a substrate. The precursor gas is either a trisilylamine gas or a silylhydrazine gas. A silicone nitride film is formed through the reaction of the hydrazine gas and the precursor gas.