Abstract: The method of the present invention is a method of forming a pattern by using a photomask having both a minute aperture where the main component of a transmitted light is an evanescent light and an aperture where the main component of a transmitted light is a propagating light, comprising the steps of forming a photoresist with a film thickness equal to or smaller than a width of the minute aperture on a substrate to be processed, and exposing the photoresist by an incident light for exposure.

Abstract: A method of forming a pattern by using a photomask having both a minute aperture where a main component of transmitted light is evanescent light and an aperture where a main component of transmitted light is propagating light. The method includes the steps of forming a photoresist having a film thickness at most equal to a width of the minute aperture on a substrate to be processed, exposing the photoresist by incident light for exposure, and adjusting the film thickness of the photoresist and the conditions of the exposure so as to prevent a photoresist pattern made by the propagating light from extending to an adjacent pattern made by the evanescent light.

Abstract: Disclosed herein is a light modulating apparatus comprising first and second two periodic structures each having a period smaller than the wavelength of light emitted from a light source, and a moving means for relatively moving the two periodic structures, wherein the surface of the first periodic structure is brought near to the surface of the second periodic structure to a space not longer than the wavelength to arrange them in a state opposed to each other, the light incident on the first periodic structure is converted into near-field light by the first periodic structure, the converted near-field light is transmitted through the second periodic structure and converted into propagation light by scattering the near-field light on the back surface of the second periodic structure, and the intensity of the propagation light is modulated by relatively moving the two periodic structures by the moving means.

Abstract: A sensor device is formed from a metal film having a plurality of openings, a sensor material positioned within each of the openings, a light source that emits light having a first wavelength, and a light detector that detects light emitted from the light source and transmitted through or reflected from the openings. The plurality of openings are arranged periodically in a first direction in the metal film, and both a size of each of the plurality of openings and an interval thereof in the first direction are equal to or less than the wavelength of the light.

Abstract: Disclosed herein is a light modulating apparatus comprising first and second two periodic structures each having a period smaller than the wavelength of light emitted from a light source, and a moving means for relatively moving the two periodic structures, wherein the surface of the first periodic structure is brought near to the surface of the second periodic structure to a space not longer than the wavelength to arrange them in a state opposed to each other, the light incident on the first periodic structure is converted into near-field light by the first periodic structure, the converted near-field light is transmitted through the second periodic structure and converted into propagation light by scattering the near-field light on the back surface of the second periodic structure, and the intensity of the propagation light is modulated by relatively moving the two periodic structures by the moving means.

Abstract: A pattern forming apparatus for forming a pattern on a substrate includes a first exposure section capable of conducting pattern exposure for a predetermined line width, a second exposure section for conducting pattern exposure for a line width greater than the predetermined linewidth of the first exposure section, and a device for detecting the relative positional relationship between the first exposure section and the second exposure section. Pattern exposure is conducted by using the first exposure section and the second exposure section on the basis of the detected positional relationship.

Abstract: There is provided a positive photoresist for near-field exposure excellent in light utilization efficiency even with small layer thickness of the photoresist layer for image formation, and allowing for reduced pattern edge roughness, and a photolithography method including a step of exposing by the near-field exposure the photoresist layer for image formation made thereof. In a positive photoresist containing an alkali-soluble novolak resin and a quinone diazide compound, the film thickness of the photoresist at the time of exposure is not larger than 100 nm, and the absorption coefficient of the photoresist &agr; (&mgr;m−1) for the exposure light is such that 0.5≦&agr;≦7.

Abstract: A near field light probe is capable of emanating a near field light having a sufficient intensity while allowing reduction of aperture size to improve resolution. The near field light probe can be incorporated in a near-field optical microscope, a near field light lithography apparatus, and a near field light storage apparatus. A near field light probe has a configuration in which a light-blocking film is formed with an aperture having slits surrounding the major opening. Light emitted from a light source is coupled into the probe from one side of the light-blocking film, the light being polarized in a predetermined direction with respect to the slits so that a near field light emanates from the major opening.

Abstract: An object of the invention is to improve the position, shape, and size of a bump in order to realize highly reliable flip-chip mounting. In the case of the semiconductor device of this embodiment, a stacked bump 14 is provided on electrode pad 12 created on the main surface of semiconductor chip 10. That is, said bump 14 comprises columnar pedestal part 14a and columnar tail part 14b having a smaller diameter than that of pedestal part 14a. Peak plane of tail part 14b (peak plane of the bump) and the top surface of pedestal part 14a are both flat. Said bump 14 is created through gold plating, for example, using a resist (photolithography) technology and a plating technology.

Abstract: A near-field optical probe comprises a micro-aperture for irradiating and/or detecting evanescent light through the front end of the probe, an elastically deformable cantilever supporting the micro-aperture at the free end thereof, and a surface plasmon polariton waveguide arranged on the cantilever to guide light from a light source to the micro-aperture and/or to guide light from a light source introduced through the micro-aperture.

Abstract: A pattern forming apparatus for forming a pattern on a substrate comprising a first exposure section capable of pattern exposure for a predetermined line width, a second exposure section for conducting pattern exposure for a line width greater than the predetermined line width of the first exposure section, and a means for detecting the relative positional relationship between the first exposure section and the second exposure section, wherein pattern exposure is conducted by using the first exposure section and the second exposure section on the basis of the detected positional relationship.

Abstract: The method of the present invention is a method of forming a pattern by using a photomask having both a minute aperture where the main component of a transmitted light is an evanescent light and an aperture where the main component of a transmitted light is a propagating light, comprising the steps of forming a photoresist with a film thickness equal to or smaller than a width of the minute aperture on a substrate to be processed, and exposing the photoresist by an incident light for exposure.

Abstract: A photolithography method using near-field light comprises a step of controlling the position of an exposure mask and an object to be processed so as to make the object to be located in a region where near-field light is present, and a step of exposing the object to near-field light while controlling the intensity of such light as a function of the aperture density of the exposure mask. The intensity of near-field light is controlled by modifying the aperture width or modifying the transmittivity of the exposure mask depending on the aperture density.