Abstract: Hydrophobicity of a low dielectric constant film comprising a porous silica film is improved by applying a raw material for forming a porous silica film onto a substrate, and performing vapor-phase transport treatment to expose the substrate to an atmosphere of organic amine vapor to which no water is added. Simultaneously, reduction in a dielectric constant, reduction in leakage current, and improvement in mechanical strength are attained by controlling a pore diameter in a predetermined range.

Abstract: Hydrophobicity of a low dielectric constant film comprising a porous silica film is improved by applying a raw material for forming a porous silica film onto a substrate, and performing vapor-phase transport treatment to expose the substrate to an atmosphere of organic amine vapor to which no water is added. Simultaneously, reduction in a dielectric constant, reduction in leakage current, and improvement in mechanical strength are attained by controlling a pore diameter in a predetermined range.

Abstract: Hydrophobicity of a low dielectric constant film comprising a porous silica film is improved by applying a raw material for forming a porous silica film onto a substrate, and performing vapor-phase transport treatment to expose the substrate to an atmosphere of organic amine vapor to which no water is added. Simultaneously, reduction in a dielectric constant, reduction in leakage current, and improvement in mechanical strength are attained by controlling a pore diameter in a predetermined range.

Abstract: Hydrophobicity of a low dielectric constant film comprising a porous silica film is improved by applying a raw material for forming a porous silica film onto a substrate, and performing vapor-phase transport treatment to expose the substrate to an atmosphere of organic amine vapor to which no water is added. Simultaneously, reduction in a dielectric constant, reduction in leakage current, and improvement in mechanical strength are attained by controlling a pore diameter in a predetermined range.

Abstract: The present invention provides a semiconductor device in which, in order to prevent wiring delay, an electromagnetic wave is radiated from a transmitting dipole antenna placed on a semiconductor chip and received with a receiving antenna placed in a circuit block included in another semiconductor chip, instead of long metal wires or via-hole interconnection.

Abstract: A semiconductor device having an electrode wiring which prevents generation of hillock and has good stress migration capability is disclosed. A multi layer film including at least two Al-Si-Cu alloy films and at least two titanium nitride films formed by reactive sputtering laminated alternately with the Al-Si-Cu alloy films has a high mechanical strength against deformation and can effectively prevent generation of hillock. Ti-Al intermetallic compounds are formed in grain boundaries and in interfaces, which is effective to restrict generation of a void. Propagation of a void can be prevented by the intermediate titanium nitride film. Further, the formation of the Ti-Al compounds is restricted and an increase of resistance is negligible.

Abstract: For preventing a semiconductor device from separation of a passivation film, there is disclosed a process of wire bonding comprising the steps of: (a) preparing an intermediate structure of a semiconductor device; (b) forming an inter-level insulating layer of an organic material on the intermediate structure; (c) forming at least one bonding pad on the inter-level insulating layer; (d) growing a passivation film of an inorganic material on the inter-level insulating film in a high temperature ambient, the passivation film exposing the bonding pad; and (e) connecting a bonding wire to the bonding pad at a temperature lower than that of the high temperature ambient.

Abstract: A semiconductor device including interconnection lines for connecting element regions is disclosed. Each of interconnection lines is comprised of a first layer consisting essentially of aluminum, an alumina film formed on the first layer and a second layer containing silicon and deposited on the alumina film. Refractory metal silicide such as tungsten silicide, molybdenum silicide, titanium silicide, tantalum silicide and chrominum silicide is favorably employed as the second layer. Hillock formation and electromigration are thus prevented or suppressed.