Patents by Inventor Takamasa Kawakami

Takamasa Kawakami has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5382333
    Abstract: A process for producing a copper-clad laminate using a copper foil obtained by subjecting the surface of the copper foil to chemical oxidation thereby to form, on the surface, a fine roughness constituted by a copper oxide of a brown to black color and then reducing the copper oxide constituting the fine roughness in an atmosphere in which a reducing gas is present.
    Type: Grant
    Filed: September 24, 1992
    Date of Patent: January 17, 1995
    Assignee: Mitsubishi Gas Chemical Company, Inc.
    Inventors: Kazuhiro Ando, Takamasa Kawakami, Yasuhiro Shouji, Yasuo Tanaka, Takeo Kanaoka, Norio Sayama
  • Patent number: 5378428
    Abstract: A method of preserving an article which includes enclosing the article and an oxygen absorbent parcel in a container having gas-barrier properties and sealing the container. The parcel is formed by packing an oxygen absorbent composition with a gas permeable packing material, the oxygen absorbent composition containing an linear hydrocarbon polymer having one or more unsaturated groups or a mixture of the polymer with an unsaturated fatty acid compound, an oxidation promoter, a basic substance and an adsorption substance.
    Type: Grant
    Filed: November 19, 1993
    Date of Patent: January 3, 1995
    Assignee: Mitsubishi Gas Chemical Company, Inc.
    Inventors: Yoshiaki Inoue, Shigeru Murabayashi, Kazuo Fujinami, Isamu Yoshino, Takamasa Kawakami, Satoru Makinose, Akira Naito
  • Patent number: 5252355
    Abstract: A process for producing a multilayered printed circuit board which comprises using, as an intermediate layer, an inner-layer board obtained by chemically oxidizing the surface of a copper foil constituting an outermost layer of an inner-layer board having a printed circuit formed in the copper foil, thereby to form on the surface a finely roughened layer constituted by a copper oxide of a brown to black color, and then reducing the copper oxide constituting the finely roughened layer in an atmosphere in which a reducing gas is present.
    Type: Grant
    Filed: July 30, 1991
    Date of Patent: October 12, 1993
    Assignee: Mitsubishi Gas Chemical Co., Inc.
    Inventors: Kazuhiro Ando, Takamasa Kawakami, Yasuhiro Shouji, Yasuo Tanaka, Takeo Kanaoka, Norio Sayama
  • Patent number: 5250101
    Abstract: A process for the production of a fine powder suitable for use in the fields of electronic materials, catalysts, powder metallurgy, pigments and adsorbens. The powder has a primary particle diameter of not more than 0.5 .mu.m, an average secondary aggregate particle diameter of not more than 10 .mu.m and a secondary aggregate particle specific surface area of 2 to 250 m.sup.2 /g, and is produced by a process comprising heating an organic acid metal salt in the presence of palladium, which lowers the thermal decomposition temperature of the salt, at a temperature elevation rate of 0.5.degree. to 20.degree.C./minute and thermally decomposing the organic acid metal salt in the presence of the palladium in the temperature range of not higher than 400.degree.C.
    Type: Grant
    Filed: April 2, 1992
    Date of Patent: October 5, 1993
    Assignee: Mitsubishi Gas Chemical Company, Inc.
    Inventors: Toshio Hidaka, Takamasa Kawakami, Satoru Makinose
  • Patent number: 5244621
    Abstract: There are disclosed in process for shaping ceramic composites which comprises shaping a sintered silicon nitride-silicon carbide composite material having a microstructure formed predominantly of equiaxed grains with an average grain size of 2 .mu.m or below and a silicon carbide content of 10-50% by volume, obtained by liquid-phase sintering, at least 40% by volume of the silicon nitride in the material being in the .beta.-phase, by superplastically deforming said material at a strain rate of 10.sup.-6 sec.sup.-1 to 10.sup.-1 sec.sup.-1 under application of tensile stress or compressive stress in a superplastic temperature region of 1400.degree.-1700.degree. C., and a process for shaping ceramic composites which comprises shaping said sintered composite material by superplastic deformation as described above and then heat-treating the shaped article obtained in a non-oxidizing atmosphere under normal or applied pressure at 1000.degree.-2300.degree. C.
    Type: Grant
    Filed: April 8, 1992
    Date of Patent: September 14, 1993
    Assignees: Mitsubishi Gas Chemical Company, Inc., Director-General of the Agency of Industrial Science and Technology
    Inventors: Fumihiro Wakai, Yasuharu Kodama, Kansei Izaki, Takamasa Kawakami
  • Patent number: 5134097
    Abstract: A sintered silicon nitride-silicon carbide composite material is provided comprising a matrix phase of silicon nitride and silicon carbide where silicon carbide grains having an average diameter of not more than 1 .mu.m are present at grain boundaries of silicon nitride grains and silicon carbide grains having a diameter of several nanometers to several hundred nanometers, typically not more than about 0.5 micrometers, are dispersed within the silicon nitride grains and a dispersion phase where (a) silicon carbide grains having an average diameter of 2 to 50 .mu.m and/or (b) silicon carbide whiskers having a short axis of 0.05 to 10 .mu.m and an aspect ratio of 5 to 300 are dispersed in the matrix phase. A process for the production of the composite material is also provided.
    Type: Grant
    Filed: November 4, 1991
    Date of Patent: July 28, 1992
    Assignee: Mitsubishi Gas Chemical Co., Inc.
    Inventors: Koichi Niihara, Kansei Izaki, Takamasa Kawakami
  • Patent number: 5106462
    Abstract: Process for producing a copper plated resin article by forming a uniform copper coating having excellent adhesive strength on a fiber-reinforced or unreinforced thermoplastic or thermosetting resin article having a heat deformation temperature higher than 165.degree. C. The resin article is heated along with a source of copper formate under a reduced pressure or in a non-oxidative atmosphere to a temperature in the range above 165.degree. C. but lower than the heat deformation temperature of the resin article. The process makes it possible to produce a resin article having formed thereon a copper layer having an excellent adhesive strength by a very simple manner, and the resin article thus obtained can be used in various industrial fields.
    Type: Grant
    Filed: November 7, 1989
    Date of Patent: April 21, 1992
    Assignee: Mitsubishi Gas Chemical Co., Inc.
    Inventors: Takamasa Kawakami, Rieko Nakano, Kazuhiro Ando, Ryuji Fujiura
  • Patent number: 5094686
    Abstract: A process for producing a copper fine powder, which comprises thermally decomposing anhydrous copper formate in a solid phase in a non-oxidizing atmosphere at a temperature in the range of from 150.degree. to 300.degree. C., thereby yielding a copper fine powder having a primary particle diameter of from 0.2 to 1 .mu.m, a specific surface area of from 5 to 0.5 m.sup.2 /g and small agglomerating properties, said anhydrous copper formate being an anhydrous copper formate powder 90 wt % or more of which undergoes thermal decomposition within a temperature range of from 160.degree. to 200.degree. C. when the anhydrous copper formate powder is heated in a nitrogen or hydrogen gas atmosphere at a heating rate of 3.degree. C./min.
    Type: Grant
    Filed: September 11, 1990
    Date of Patent: March 10, 1992
    Assignee: Mitsubishi Gas Chemical Co., Inc.
    Inventors: Takamasa Kawakami, Satoru Makinose, Kazuhiro Ando, Rieko Nakano
  • Patent number: 5093510
    Abstract: A process for producing copper formate, which comprises subjecting methyl formate to a liquid-phase hydrolysis reaction at a temperature from 60 to 85.degree. C. in the presence of copper carbonate.
    Type: Grant
    Filed: December 5, 1990
    Date of Patent: March 3, 1992
    Assignee: Mitsubishi Gas Chemical Co., Ltd.
    Inventors: Takamasa Kawakami, Ryuji Fujiura, Kazuhiro Ando, Rieko Nakano
  • Patent number: 4913938
    Abstract: A method for producing a copper film-formed molding is disclosed, comprising a coating a mixed solution containing at least one copper compound selected from copper hydroxide and organic acid copper salts and a polyhydric alcohol as essential components on the desired area of an article having a heat deflection temperature of at least 165.degree. C., and heating to a temperature of from 165.degree. C. to the heat deflection temperature of the article and maintaining at this temperature in a non-oxidizing atmosphere.
    Type: Grant
    Filed: December 23, 1988
    Date of Patent: April 3, 1990
    Assignee: Mitsubishi Gas Chemical Company, Inc.
    Inventors: Takamasa Kawakami, Kazuhiro Ando, Ryuji Fujira
  • Patent number: 4800182
    Abstract: The invention relates to a sintered silicon nitride-silicon carbide composite material excellent in toughness and strength and to a process for producing the same. The present sintered composite material is substantially formed of silicon nitride predominantly in .beta.-phase and about 5 to 35% by weight of silicon carbide predominantly in .beta.-phase, which is characterized by the microstructure such that the silicon nitride is in the form of fine grains comprising elongated grains, 0.2 to 1.0 .mu.m in length of minor axis and 1 to 10 .mu.m in length of major axis, and equiaxed grains, 1 .mu.m or below in average size, and the silicon carbide is in the form of equiaxed grains, 1 .mu.m or below in average size, said silicon carbide grains being uniformly dispersed. Having a three-point flexural strength of at least 95 kg/mm.sup.2 and a fracture toughness (K.sub.IC) of at least 54 MN/m.sup.3/2, the present sintered material is excellent in toughness and strength.
    Type: Grant
    Filed: January 20, 1987
    Date of Patent: January 24, 1989
    Assignee: Mitsubishi Gas Chemical Company, Inc.
    Inventors: Kansei Izaki, Takamasa Kawakami, Kouichi Hakkei, Kazuhiro Ando
  • Patent number: 4613490
    Abstract: Fine silicon nitride powders, fine silicon carbide powders, or fine powdery mixture of silicon nitride and silicon carbide are prepared by vapor phase reaction of an aminosilane compound, a cyanosilane compound, a silazane compound, an alkoxysilane compound or a siloxane compound and heat treatment of the resulting fine powders in a non-oxidizing gas atmosphere.
    Type: Grant
    Filed: May 2, 1985
    Date of Patent: September 23, 1986
    Assignee: Mitsubishi Gas Chemical Company, Inc.
    Inventors: Takashi Suzuki, Takamasa Kawakami, Rieko Nakano, Takeshi Koyama, Kansei Izaki, Akira Mori, Masami Orisaku
  • Patent number: 4594330
    Abstract: Fine spherical amorphous powder represented by the general formula:SiCxNyHzwherein 0.1<x<2.0, 0.1<y<1.5 and 0<z<4, is prepared by vapor phase oxidation of organosilicon compound substantially free from halogen atoms and oxygen atoms. An ultimately crystalline, uniform and fine powder of silicon nitride and silicon carbide is prepared by heat treatment of the fine spherical amorphous powder. The powder and the crystalline uniform, and fine powder are used as raw materials for composite ceramics and as functional materials for solar cell.
    Type: Grant
    Filed: March 15, 1985
    Date of Patent: June 10, 1986
    Assignee: Mitsubishi Gas Chemical Company, Inc.
    Inventors: Takashi Suzuki, Takamasa Kawakami, Takeshi Koyama, Masami Orisaku, Kansei Izaki, Rieko Nakano, Akira Mori
  • Patent number: 4298545
    Abstract: Phthalonitrile is produced in a good yield by contacting a xylylenediamine condensate with an oxide catalyst of silica or alumina system in the presence of a molecular oxygen-containing gas or a mixture of a molecular oxygen-containing gas and ammonia.
    Type: Grant
    Filed: April 3, 1980
    Date of Patent: November 3, 1981
    Assignee: Mitsubishi Gas Chemical Company, Inc.
    Inventors: Masao Saito, Motoyuki Hosokawa, Takamasa Kawakami, Yuko Murayama
  • Patent number: 4082786
    Abstract: Aromatic nitriles can be produced at a high conversion and at a high selectivity by filling cylindrical wire netting into a fluidized bed reactor when the aromatic nitriles are produced by subjecting a mixture of an aromatic hydrocarbon, ammonia and molecular oxygen to fluid catalytic reaction in the presence of a fluid catalyst.
    Type: Grant
    Filed: November 11, 1976
    Date of Patent: April 4, 1978
    Assignee: Mitsubishi Gas Chemical Company, Inc.
    Inventors: Masao Saito, Mamoru Onozawa, Kaoru Sasagawa, Takamasa Kawakami
  • Patent number: 3959339
    Abstract: Aromatic nitriles are produced in good yield from a gas mixture comprising alkyl-substituted aromatic compound, ammonia and molecular oxygen by ammoxidation by passing the gas mixture over a catalyst comprising vanadium oxide, chromium oxide, boron oxide and phosphorus oxide, deposited on a silica carrier, in an atomic ratio of V : Cr : B : P of 1 : 0.5 - 2.0 : 0.1 - 1.2 : 0.01 - 0.3 and a catalyst concentration of 20 to 80 % by weight at a reaction temperature of 300.degree. to 500.degree.C for a contact time of 0.5 to 30 seconds.
    Type: Grant
    Filed: June 4, 1974
    Date of Patent: May 25, 1976
    Assignee: Mitsubishi Gas Chemical Company, Inc.
    Inventors: Masao Saito, Mamoru Onozawa, Takamasa Kawakami