Abstract: RC-IGBT chips and RC-IGBT chips correspond to a pair of adjacent RC-IGBT chips in an X direction between the RC-IGBT chips. The RC-IGBT chips satisfy a first arrangement condition in which the chips are separately arranged without a bonding point region and a bonding point region overlapping each other in a Y direction, and a second arrangement condition in which, in the Y direction, the chips are arranged to partially overlap so that a part of emitter electrodes excluding the bonding point region and the bonding point region overlap. The RC-IGBT chips also satisfy the first and second arrangement conditions described above.

Abstract: A semiconductor device includes: a switching device including a main portion and a current sensing portion for detecting a current value of the main portion; a control IC including a gate drive unit that drives the switching device; a sensing resistor connected between an emitter of the main portion and an emitter of the current sensing portion and formed inside the control IC; a comparator comparing a sense voltage applied to the sensing resistor with a reference voltage; and a shut-down circuit shutting down an energization of the switching device when the sense voltage exceeds the reference voltage, wherein the sense voltage is more than or equal to 1 V when the energization of the switching device is shut down.

Abstract: A semiconductor apparatus includes: an insulating substrate; a plurality of power semiconductor devices arranged in line on the insulating substrate; and a plurality of control semiconductor devices arranged in line on the insulating substrate so as to face the plurality of power semiconductor devices respectively and driving the plurality of power semiconductor devices, wherein the control semiconductor devices at both ends of the plurality of control semiconductor devices arranged in line are arranged closer to the corresponding power semiconductor devices than the control semiconductor devices which are other than the control semiconductor devices at both ends.

Abstract: A semiconductor device includes: a switching device including a main portion and a current sensing portion for detecting a current value of the main portion; a control IC including a gate drive unit that drives the switching device; a sensing resistor connected between an emitter of the main portion and an emitter of the current sensing portion and formed inside the control IC; a comparator comparing a sense voltage applied to the sensing resistor with a reference voltage; and a shut-down circuit shutting down an energization of the switching device when the sense voltage exceeds the reference voltage, wherein the sense voltage is more than or equal to 1 V when the energization of the switching device is shut down.

Abstract: RC-IGBT chips and RC-IGBT chips correspond to a pair of adjacent RC-IGBT chips in an X direction between the RC-IGBT chips. The RC-IGBT chips satisfy a first arrangement condition in which the chips are separately arranged without a bonding point region and a bonding point region overlapping each other in a Y direction, and a second arrangement condition in which, in the Y direction, the chips are arranged to partially overlap so that a part of emitter electrodes excluding the bonding point region and the bonding point region overlap. The RC-IGBT chips also satisfy the first and second arrangement conditions described above.

Abstract: The inventive concept relates to a cobalt precursor, a method for manufacturing a cobalt-containing layer using the same, and a method for manufacturing a semiconductor device using the same. More particularly, the cobalt precursor of the inventive concept includes at least one compound selected from the group consisting of a compound of Formula 1 and a compound of Formula 2.

Abstract: The inventive concept relates to a cobalt precursor, a method for manufacturing a cobalt-containing layer using the same, and a method for manufacturing a semiconductor device using the same. More particularly, the cobalt precursor of the inventive concept includes at least one compound selected from the group consisting of a compound of Formula 1 and a compound of Formula 2.

Abstract: A method manufactures diethyl carbonate by reaction distillation where transesterification and distillation are simultaneously performed in a multistage reaction distillation column provided with a catalyst introduction port and a raw material introduction port located below the catalyst introduction port, wherein: (a) the reaction is performed in a countercurrent flow format in which contact is brought about between a transesterification catalyst, dimethyl carbonate, and ethanol; (e) 1 to 250 mmol of catalyst is used per mole of dimethyl carbonate; (f) the ratio of the volume of air in the catalyst introduction port and the raw material introduction port regarding the volume of air in the reaction distillation part is 0.1 to 0.9; (g) the recirculation ratio in the reaction distillation column is 0.5 to 10; and (h) the temperature of the top part of the column and the reaction distillation part is 60 to 100° C.

Abstract: A method manufactures diethyl carbonate by reaction distillation where transesterification and distillation are simultaneously performed in a multistage reaction distillation column provided with a catalyst introduction port and a raw material introduction port located below the catalyst introduction port, wherein: (a) the reaction is performed in a countercurrent flow format in which contact is brought about between a transesterification catalyst, dimethyl carbonate, and ethanol; (e) 1 to 250 mmol of catalyst is used per mole of dimethyl carbonate; (f) the ratio of the volume of air in the catalyst introduction port and the raw material introduction port regarding the volume of air in the reaction distillation part is 0.1 to 0.9; (g) the recirculation ratio in the reaction distillation column is 0.5 to 10; and (h) the temperature of the top part of the column and the reaction distillation part is 60 to 100° C.