Abstract: A ferroelectric film containing a perovskite type oxide represented by Formula (P) is formed on a substrate, which stands facing a target, by a sputtering technique under conditions of a height of a shield, which surrounds an outer periphery of the target on the substrate side in a non-contact state and comprises shielding layers superposed one upon another at intervals, such that a difference between a plasma potential and a floating potential is at most 35V, and under conditions such that a temperature of the substrate is at least 400° C.: (Pb1?x+?Mx) (ZryTi1?y)O???(P) wherein M represents at least one kind of element selected from Bi and lanthanide elements, 0.05?x?0.4, and 0<y?0.7, the standard composition being such that ?=0, and z=3.