Abstract: A method for depositing a film on a substrate disposed in a processing chamber includes repeating a cycle. The cycle includes a precursor step and a reactant step, and may include purge steps. A reductant step is performed during at least a portion of the cycle. The precursor step includes exposing the substrate to a precursor gas to form an intermediate film from the precursor gas at the substrate. The precursor gas may be a metal halide gas, such as titanium tetrachloride gas. The reactant step includes exposing the substrate to a reactant gas to chemically react with the intermediate film to form the film. The reactant gas may be a hydronitrogen gas having at least two nitrogen atoms, such as hydrazine gas. The reductant step includes exposing the substrate to a reductant gas, such as a gas containing hydrogen, like hydrogen gas.

Abstract: A film forming method of forming a metallic titanium film on a substrate, includes: a process of forming the metallic titanium film by an atomic layer deposition (plasma enhanced ALD) method that alternately performs an adsorption operation of adsorbing a raw material gas onto a surface of the substrate by supplying the raw material gas into a processing container in which the substrate is accommodated, and a reaction operation of supplying a reactive gas into the processing container to plasmarize the reactive gas and causing the plasmarized reactive gas to react with the raw material gas adsorbed onto the surface of the substrate, wherein, in the reaction operation, the reactive gas is plasmarized with radio frequency power having a frequency of 38 MHz or more and 60 MHz or less.

Abstract: A film forming method includes: supplying a liquid to a concave portion of a substrate whose surface includes the concave portion and a convex portion which are adjacent to each other; and selectively forming a film on a top surface of the convex portion of the surface of the substrate by supplying a processing gas, which chemically changes the liquid, to the surface of the substrate, and moving the liquid from the concave portion to the top surface of the convex portion by a reaction between the processing gas and the liquid.

Abstract: A film forming apparatus includes a vacuum-evacuable processing chamber, a lower electrode for mounting thereon a target substrate, an upper electrode disposed to face the lower electrode, a gas supply unit, a voltage application unit and a switching unit. The gas supply unit supplies a film forming source gas to be formed into plasma to a processing space between the upper and the lower electrode. The voltage application unit applies to the upper electrode a voltage outputted from at least one of a high frequency power supply and a DC power supply included therein. The switching unit selectively switches the voltage to be applied to the upper electrode among a high frequency voltage outputted from the high frequency power supply, a DC voltage outputted from the DC power supply, and a superimposed voltage in which the DC voltage is superimposed with the high frequency voltage.

Abstract: A plasma processing method according to an embodiment is performed in a state in which a substrate is placed on a support stage in an internal space of a chamber body. In the plasma processing method, a plasma treatment is performed on the substrate. Subsequently, a phase of a voltage of a lower electrode is relatively adjusted with respect to a phase of a voltage of an upper electrode by a phase adjustment circuit, such that a thickness of a sheath between the support stage and plasma without extinguishing the plasma generated in order to perform the plasma treatment. Thereafter, in a state in which supply of a high-frequency power is stopped, gases and particles in the internal space of the chamber body are discharged using an exhaust device.

Abstract: A plasma processing apparatus is provided to perform plasma processing on a substrate. The plasma processing apparatus includes a processing chamber, a substrate support disposed in the processing chamber to place thereon the substrate, a grounded lower electrode provided in the substrate support, an upper electrode disposed to face the lower electrode, a gas supply unit to supply a processing gas to a space between the upper electrode and the substrate support, and a radio frequency power supply to apply RF power to the upper electrode to generate plasma of the processing gas. The plasma processing apparatus further includes a voltage waveform shaping unit provided between the RF power supply and the upper electrode to shape a voltage waveform of the RF power supply to suppress a positive voltage of the RF voltage applied to the upper electrode.

Abstract: A plasma processing method according to an embodiment is performed in a state in which a substrate is placed on a support stage in an internal space of a chamber body. In the plasma processing method, a plasma treatment is performed on the substrate. Subsequently, a phase of a voltage of a lower electrode is relatively adjusted with respect to a phase of a voltage of an upper electrode by a phase adjustment circuit, such that a thickness of a sheath between the support stage and plasma without extinguishing the plasma generated in order to perform the plasma treatment. Thereafter, in a state in which supply of a high-frequency power is stopped, gases and particles in the internal space of the chamber body are discharged using an exhaust device.

Abstract: Disclosed is a film forming method including forming a metal oxide film on a base film by alternately supplying a metal-containing gas and a plasmatized oxidizing gas. The metal-containing gas is changed from a first metal-containing gas having no halogen to a second metal-containing gas different from the first metal-containing gas during the film forming of the metal oxide film.

Abstract: There is provided a method of performing a surface treatment with respect to a metal mounting table for mounting a substrate to be plasma-processed, the mounting table functioning as a lower electrode configured to generate a plasma by a high frequency power applied between an upper electrode and the lower electrode. The method includes: performing a first surface treatment by spraying a non-sublimation blast material as a non-sublimation material onto a mounting surface of the metal mounting table on which the substrate is mounted, followed by a second surface treatment by spraying a sublimation blast material as a sublimation material onto the mounting surface.

Abstract: A method of forming a RuSi film includes performing a process a plurality of times, the process including alternately repeating: supplying a Ru(DMBD)(CO)3 gas into a processing container accommodating a substrate; and supplying a hydrogenated silicon gas into the processing container.

Abstract: A method for performing a process on a target in a chamber. A gas discharge unit includes a first space having a discharge hole for discharging a first gas, a second space having a discharge hole for discharging a second gas and a third space having a discharge hole for discharging a gas generated between the first and second spaces. A distribution unit includes a first distribution pipe communicating with the first space, a second distribution pipe communicating with the second space and a third distribution pipe communicating with the third space. A valve group includes a first valve opened or closed to the first distribution pipe and a second valve opened or closed to the second distribution pipe. The method includes switching, without mixing the first gas and the second gas, the gas discharged from the discharge hole in the third space by opening or closing the valve group.

Abstract: Provided is a method of removing a silicon oxide film of a workpiece having an insulating film and the silicon oxide film exposed at a bottom portion of an opening formed in the insulating film, including: forming a protective film containing carbon on a surface of the workpiece, wherein the protective film has a first region extending along a side wall surface of the insulating film that defines the opening and a second region extending on the silicon oxide film: removing the second region of the protective film and the silicon oxide film by sputter etching with ions from plasma of a first inert gas; and removing a residue of the silicon oxide film by chemical etching. The step of forming the protective film includes executing a plurality of cycles.

Abstract: A film forming apparatus includes a vacuum-evacuable processing chamber, a lower electrode for mounting thereon a target substrate, an upper electrode disposed to face the lower electrode, a gas supply unit, a voltage application unit and a switching unit. The gas supply unit supplies a film forming source gas to be formed into plasma to a processing space between the upper and the lower electrode. The voltage application unit applies to the upper electrode a voltage outputted from at least one of a high frequency power supply and a DC power supply included therein. The switching unit selectively switches the voltage to be applied to the upper electrode among a high frequency voltage outputted from the high frequency power supply, a DC voltage outputted from the DC power supply, and a superimposed voltage in which the DC voltage is superimposed with the high frequency voltage.

Abstract: Provided is a method of removing a silicon oxide film of a workpiece having an insulating film and the silicon oxide film exposed at a bottom portion of an opening formed in the insulating film, including: forming a protective film containing carbon on a surface of the workpiece, wherein the protective film has a first region extending along a side wall surface of the insulating film that defines the opening and a second region extending on the silicon oxide film: removing the second region of the protective film and the silicon oxide film by sputter etching with ions from plasma of a first inert gas; and removing a residue of the silicon oxide film by chemical etching. The step of forming the protective film includes executing a plurality of cycles.

Abstract: A plurality of embodiments for ReRAM devices and method of making are described. According to one embodiment, the ReRAM device includes a first electrode film formed on a substrate, a metal oxide film with oxygen vacancies formed on a first electrode film, a conformal TiAlC film, oxidized by diffused oxygen atoms from the metal oxide film, formed on the metal oxide film, and a second electrode film formed on the TiAlC film. According to another embodiment, the ReRAM device includes a pair of vertical metal oxide films, a pair of vertical conformal TiAlC films formed on the pair of vertical metal oxide films, the pair of vertical conformal TiAlC films oxidized by diffused oxygen atoms from the pair of vertical metal oxide films, and an electrode film formed between the pair of vertical conformal TiAlC films.

Abstract: Disclosed is a film forming method including forming a metal oxide film on a base film by alternately supplying a metal-containing gas and a plasmatized oxidizing gas. The metal-containing gas is changed from a first metal-containing gas having no halogen to a second metal-containing gas different from the first metal-containing gas during the film forming of the metal oxide film.

Abstract: A plurality of embodiments for ReRAM devices and method of making are described. According to one embodiment, the ReRAM device includes a first electrode film formed on a substrate, a metal oxide film with oxygen vacancies formed on a first electrode film, a conformal TiAlC film, oxidized by diffused oxygen atoms from the metal oxide film, formed on the metal oxide film, and a second electrode film formed on the TiAlC film. According to another embodiment, the ReRAM device includes a pair of vertical metal oxide films, a pair of vertical conformal TiAlC films formed on the pair of vertical metal oxide films, the pair of vertical conformal TiAlC films oxidized by diffused oxygen atoms from the pair of vertical metal oxide films, and an electrode film formed between the pair of vertical conformal TiAlC films.

Abstract: Provided is a method of removing a silicon oxide film of a workpiece having an insulating film and the silicon oxide film exposed at a bottom portion of an opening formed in the insulating film, including: forming a protective film containing carbon on a surface of the workpiece, wherein the protective film has a first region extending along a side wall surface of the insulating film that defines the opening and a second region extending on the silicon oxide film: removing the second region of the protective film and the silicon oxide film by sputter etching with ions from plasma of a first inert gas; and removing a residue of the silicon oxide film by chemical etching. The step of forming the protective film includes executing a plurality of cycles.

Abstract: A method for performing a process on a target in a chamber. A gas discharge unit includes a first space having a discharge hole for discharging a first gas, a second space having a discharge hole for discharging a second gas and a third space having a discharge hole for discharging a gas generated between the first and second spaces. A distribution unit includes a first distribution pipe communicating with the first space, a second distribution pipe communicating with the second space and a third distribution pipe communicating with the third space. A valve group includes a first valve opened or closed to the first distribution pipe and a second valve opened or closed to the second distribution pipe. The method includes switching, without mixing the first gas and the second gas, the gas discharged from the discharge hole in the third space by opening or closing the valve group.

Abstract: Disclosed is a method for removing, from a target substrate having an insulating film with a predetermined pattern formed thereon, a silicon-containing oxide film formed in a silicon portion at a bottom of the pattern. The method includes: forming a carbon-based protective film on the entire surface of the insulating film including the pattern by ALD using a carbon source gas; selectively removing the carbon-based protective film on an upper surface of the insulating film and on the bottom of the pattern by an anisotropic plasma processing; removing the silicon-containing oxide film formed on the bottom of the pattern by etching; and removing a remaining portion of the carbon-based protective film.