Patents by Inventor Takamichi Ogawa

Takamichi Ogawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11142484
    Abstract: A semiconductor production device component includes a first ceramic member including an AlN-based material, a second ceramic member including an AlN-based material, and a joint layer disposed between the first ceramic member and the second ceramic member so as to join the first ceramic member and the second ceramic member to each other. The joint layer includes a composite oxide containing Gd and Al, and Al2O3, and is free from AlN.
    Type: Grant
    Filed: July 13, 2017
    Date of Patent: October 12, 2021
    Assignee: NGK SPARK PLUG CO., LTD.
    Inventors: Kohei Mitsuya, Hideo Tange, Motoki Hotta, Takamichi Ogawa
  • Publication number: 20190304813
    Abstract: The scattering of a rare earth hydroxide is suppressed, and the loss of bond strength between a first ceramic member and a second ceramic member is reduced. A semiconductor production device component includes a first ceramic member including an AlN-based material, a second ceramic member including an AlN-based material, and a joint layer disposed between the first ceramic member and the second ceramic member so as to join the first ceramic member and the second ceramic member to each other, wherein the joint layer includes a perovskite oxide represented by ABO3 (wherein A is a rare earth element, and B is Al) and includes no rare earth single oxide containing exclusively a rare earth element and oxygen.
    Type: Application
    Filed: July 13, 2017
    Publication date: October 3, 2019
    Inventors: Kohei MITSUYA, Hideo TANGE, Motoki HOTTA, Takamichi OGAWA
  • Publication number: 20190284100
    Abstract: A first ceramic member and a second ceramic member are joined together at a lower joining temperature while reducing the loss of bond strength. A method for producing a semiconductor production device component includes a step of providing a first ceramic member including an AlN-based material, a step of providing a second ceramic member including an AlN-based material, and a step of joining the first ceramic member and the second ceramic member to each other by thermally pressing the first ceramic member and the second ceramic member to each other via a joint agent including Eu2O3, Gd2O3 and Al2O3 disposed between the first ceramic member and the second ceramic member.
    Type: Application
    Filed: July 13, 2017
    Publication date: September 19, 2019
    Inventors: Kohei MITSUYA, Hideo TANGE, Motoki HOTTA, Takamichi OGAWA
  • Publication number: 20190263724
    Abstract: A semiconductor production device component includes a first ceramic member including an AlN-based material, a second ceramic member including an AlN-based material, and a joint layer disposed between the first ceramic member and the second ceramic member so as to join the first ceramic member and the second ceramic member to each other. The joint layer includes a composite oxide containing Gd and Al, and Al2O3, and is free from AlN.
    Type: Application
    Filed: July 13, 2017
    Publication date: August 29, 2019
    Inventors: Kohei MITSUYA, Hideo TANGE, Motoki HOTTA, Takamichi OGAWA
  • Patent number: 8813353
    Abstract: A dielectric structure including a metal foil, a dielectric layer and a conductor layer provided in this order, wherein the metal foil has a thickness of from 10 to 40 ?m, the dielectric layer has a thickness of from 0.3 to 5 ?m, and the conductor layer has a thickness of from 0.3 to 10 ?m. The dielectric structure has plural vias which are separated from each other, and which penetrate through both of the dielectric layer and the conductor layer. The vias of the dielectric layer have different diameters which are in a range of from 100 to 300 ?m, a diameter of each of the vias of the conductor layer is larger than a diameter of a corresponding via of the dielectric layer by 5 to 50 ?m, and a minimum via pitch is from 100 to 350 ?m.
    Type: Grant
    Filed: May 21, 2010
    Date of Patent: August 26, 2014
    Assignee: NGK Spark Plug Co., Ltd.
    Inventors: Yasuhiko Inui, Takamichi Ogawa, Seiji Ichiyanagi, Jun Otsuka, Manabu Sato
  • Publication number: 20100242271
    Abstract: A dielectric structure including a metal foil, a dielectric layer and a conductor layer provided in this order, wherein the metal foil has a thickness of from 10 to 40 ?m, the dielectric layer has a thickness of from 0.3 to 5 ?m, and the conductor layer has a thickness of from 0.3 to 10 ?m. The dielectric structure has plural vias which are separated from each other, and which penetrate through both of the dielectric layer and the conductor layer. The vias of the dielectric layer have different diameters which are in a range of from 100 to 300 ?m, a diameter of each of the vias of the conductor layer is larger than a diameter of a corresponding via of the dielectric layer by 5 to 50 ?m, and a minimum via pitch is from 100 to 350 ?m.
    Type: Application
    Filed: May 21, 2010
    Publication date: September 30, 2010
    Applicant: NGK SPARK PLUG CO., LTD.
    Inventors: Yasuhiko Inui, Takamichi Ogawa, Seiji Ichiyanagi, Jun Otsuka, Manabu Sato
  • Patent number: 7750248
    Abstract: A dielectric structure including a metal foil, a dielectric layer and a conductor layer provided in this order, wherein the metal foil has a thickness of from 10 to 40 ?m, the dielectric layer has a thickness of from 0.3 to 5 ?m, and the conductor layer has a thickness of from 0.3 to 10 ?m. The dielectric structure has plural vias which are separated from each other, and which penetrate through both of the dielectric layer and the conductor layer. The vias of the dielectric layer have different diameters which are in a range of from 100 to 300 ?m, a diameter of each of the vias of the conductor layer is larger than a diameter of a corresponding via of the dielectric layer by 5 to 50 ?m, and a minimum via pitch is from 100 to 350 ?m.
    Type: Grant
    Filed: December 6, 2006
    Date of Patent: July 6, 2010
    Assignee: NGK Spark Plug Co., Ltd.
    Inventors: Yasuhiko Inui, Takamichi Ogawa, Seiji Ichiyanagi, Jun Otsuka, Manabu Sato
  • Publication number: 20070125575
    Abstract: A dielectric structure comprising: a metal foil; a dielectric layer; and a conductor layer provided in this order, wherein the metal foil has a thickness of from 10 to 40 ?m, the dielectric layer has a thickness of from 0.3 to 5 ?m, and the conductor layer has a thickness of from 0.3 to 10 ?m, the dielectric structure has plural vias which are separated from each other, and which penetrate through both of the dielectric layer and the conductor layer, and the vias of the dielectric layer have different diameters which are in a range of from 100 to 300 ?m, a diameter of each of the vias of the conductor layer is larger than a diameter of a corresponding via of the dielectric layer by 5 to 50 ?m, and a minimum via pitch is from 100 to 350 ?m.
    Type: Application
    Filed: December 6, 2006
    Publication date: June 7, 2007
    Inventors: Yasuhiko Inui, Takamichi Ogawa, Seiji Ichiyanagi, Jun Otsuka, Manabu Sato