Abstract: An imaging device includes a plurality of pixels and a voltage supply circuit. Each of the plurality of pixels includes: a pixel electrode; a counter electrode; a photoelectric conversion layer located between the pixel electrode and the counter electrode; and a charge blocking layer located between the pixel electrode and the photoelectric conversion layer. The charge blocking layer contains an impurity and has a first surface facing the photoelectric conversion layer and a second surface facing the pixel electrode. The concentration of the impurity on the first surface is higher than the concentration of the impurity on the second surface. The voltage supply circuit supplies a first voltage between the counter electrode and the pixel electrode in a first period and supplies a second voltage different from the first voltage between the counter electrode and the pixel electrode in a second period.

Abstract: An imaging apparatus includes a first electrode, a second electrode, a photoelectric conversion layer, a charge injection layer, and a charge accumulation region. The second electrode opposes the first electrode. The photoelectric conversion layer is located between the first electrode and the second electrode, contains a donor semiconductor material and an acceptor semiconductor material, and generates a pair of an electron and a hole. The charge injection layer is located between the first electrode and the photoelectric conversion layer. The charge accumulation region is electrically coupled to the second electrode and accumulates the hole. An ionization potential of the charge injection layer is less than or equal to an ionization potential of the acceptor semiconductor material. Electron affinity of the charge injection layer is less than or equal to electron affinity of the acceptor semiconductor material. Light transmittance of the charge injection layer is greater than or equal to 70%.

Abstract: An imaging device includes a pixel electrode, a counter electrode facing the pixel electrode, and a photoelectric conversion layer located between the pixel electrode and the counter electrode. The counter electrode includes a first transparent electrode, a second transparent electrode, and an intermediate layer located between the first transparent electrode and the second transparent electrode. A material of the intermediate layer is different from a material of the first transparent electrode and different from a material of the second transparent electrode. The photoelectric conversion layer, the first transparent electrode, the intermediate layer, and the second transparent electrode are arranged in this order. The intermediate layer contains an insulating material as a major ingredient.

Abstract: An imaging device includes a plurality of pixels and a voltage supply circuit. Each of the plurality of pixels includes: a pixel electrode; a counter electrode; a photoelectric conversion layer located between the pixel electrode and the counter electrode; and a charge blocking layer located between the pixel electrode and the photoelectric conversion layer. The charge blocking layer contains an impurity and has a first surface facing the photoelectric conversion layer and a second surface facing the pixel electrode. The concentration of the impurity on the first surface is higher than the concentration of the impurity on the second surface. The voltage supply circuit supplies a first voltage between the counter electrode and the pixel electrode in a first period and supplies a second voltage different from the first voltage between the counter electrode and the pixel electrode in a second period.

Abstract: A method for producing a semiconductor layer containing a metal oxide, which comprises: coating an ink containing a specific metal salt of unsaturated carboxylic acid on a base material; and conducting a heat treatment after the coating.

Abstract: There is provides a photoelectric conversion device material which can be used as an electrode buffer material for a solar cell or the like and can improve durability while maintaining the interaction with an electrode and mobility; a photoelectric conversion device using the photoelectric conversion device material; and a solar cell using the photoelectric conversion device. A photoelectric conversion device containing a buffer layer and an active layer, wherein the buffer layer contains a compound represented by the following general formula (I), the active layer contains an n-type semiconductor, and the n-type semiconductor is a compound having a solubility in toluene of 0.5% by weight or more at 25° C. and having an electron mobility of 1.0×10?6 cm2/Vs or more.