Patents by Inventor Takamitsu Matsuo

Takamitsu Matsuo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device and method for producing the same
    Patent number: 10600896
    Abstract: In an active region, a gate electrode is disposed in a trench. Spaced apart from the gate electrode, an emitter electrode is disposed in the trench. A source diffusion layer and a base diffusion layer are formed in the active region. The base diffusion layer has a base bottom portion inclined in such a manner that a portion of the base bottom portion adjacent to the emitter electrode is positionally deeper than a portion of the base bottom portion adjacent to the gate electrode. A contact portion has a contact bottom portion inclined in such a manner that a portion of the contact bottom portion in contact with the emitter electrode is positionally deeper than a portion of the contact bottom portion in contact with the base diffusion layer.
    Type: Grant
    Filed: September 11, 2017
    Date of Patent: March 24, 2020
    Assignee: Renesas Electronics Corporation
    Inventors: Takamitsu Matsuo, Hitoshi Matsuura, Yasuyuki Saito, Yoshinori Hoshino
  • SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING THE SAME
    Publication number: 20180076308
    Abstract: In an active region, a gate electrode is disposed in a trench. Spaced apart from the gate electrode, an emitter electrode is disposed in the trench. A source diffusion layer and a base diffusion layer are formed in the active region. The base diffusion layer has a base bottom portion inclined in such a manner that a portion of the base bottom portion adjacent to the emitter electrode is positionally deeper than a portion of the base bottom portion adjacent to the gate electrode. A contact portion has a contact bottom portion inclined in such a manner that a portion of the contact bottom portion in contact with the emitter electrode is positionally deeper than a portion of the contact bottom portion in contact with the base diffusion layer.
    Type: Application
    Filed: September 11, 2017
    Publication date: March 15, 2018
    Inventors: Takamitsu Matsuo, Hitoshi Matsuura, Yasuyuki Saito, Yoshinori Hoshino