Abstract: A semiconductor device includes a first switching element, a second switching element, an optical coupling element, a plurality of leads and an outer resin member. The first switching element includes a first semiconductor chip and a first inner resin member sealing the first semiconductor chip. The second switching element includes a second semiconductor chip and a second inner resin member sealing the second semiconductor chip. The optical coupling element includes a light-emitting element, a light-receiving element and a third inner resin member sealing the light-emitting element and the light-receiving element. The first and second switching element and the optical coupling element are provided with terminals projecting from the first to third inner resin member, and the plurality of leads are electrically connected to the terminals. The outer resin member seals the first and second switching elements, the optical coupling element, and the plurality of leads.

Abstract: An optical coupling device of an embodiment includes: a first lead frame; a light emitting element provided on the first lead frame; a second lead frame; a light receiving element provided on the second lead frame and facing the light emitting element; a polyimide resin covering a light emitting surface of the light emitting element; a transparent resin portion provided between the light emitting element and the light receiving element; and a light-shielding resin molded body accommodating the light emitting element and the light receiving element.

Abstract: A semiconductor device includes a first switching element, a second switching element, an optical coupling element, a plurality of leads and an outer resin member. The first switching element includes a first semiconductor chip and a first inner resin member sealing the first semiconductor chip. The second switching element includes a second semiconductor chip and a second inner resin member sealing the second semiconductor chip. The optical coupling element includes a light-emitting element, a light-receiving element and a third inner resin member sealing the light-emitting element and the light-receiving element. The first and second switching element and the optical coupling element are provided with terminals projecting from the first to third inner resin member, and the plurality of leads are electrically connected to the terminals. The outer resin member seals the first and second switching elements, the optical coupling element, and the plurality of leads.

Abstract: An optical coupling device of an embodiment includes: a first lead frame; a light emitting element provided on the first lead frame; a second lead frame; a light receiving element provided on the second lead frame and facing the light emitting element; a polyimide resin covering a light emitting surface of the light emitting element; a transparent resin portion provided between the light emitting element and the light receiving element; and a light-shielding resin molded body accommodating the light emitting element and the light receiving element.

Abstract: The suppression of resin leakage is combined with the suppression of damage to the functional wiring area of a wiring board in forming an encapsulation resin. A method for manufacturing a semiconductor device includes the step of clamping a wiring board with a first mold and a second mold. The second mold includes: a flat portion contacting a wiring board; a recessed portion forming a cavity to form an encapsulation resin; and a projecting portion formed at a location spaced apart from the recessed portion on the flat portion, the projecting portion projecting on the first mold side, and extending along the first edge of the wiring board.

Abstract: The suppression of resin leakage is combined with the suppression of damage to the functional wiring area of a wiring board in forming an encapsulation resin. A method for manufacturing a semiconductor device includes the step of clamping a wiring board with a first mold and a second mold. The second mold includes: a flat portion contacting a wiring board; a recessed portion forming a cavity to form an encapsulation resin; and a projecting portion formed at a location spaced apart from the recessed portion on the flat portion, the projecting portion projecting on the first mold side, and extending along the first edge of the wiring board.

Abstract: The suppression of resin leakage is combined with the suppression of damage to the functional wiring area of a wiring board in forming an encapsulation resin. A method for manufacturing a semiconductor device includes the step of clamping a wiring board with a first mold and a second mold. The second mold includes: a flat portion contacting a wiring board; a recessed portion forming a cavity to form an encapsulation resin; and a projecting portion formed at a location spaced apart from the recessed portion on the flat portion, the projecting portion projecting on the first mold side, and extending along the first edge of the wiring board.

Abstract: In a method of manufacturing a semiconductor device, a first groove and a second groove each having a width less than that of a scribe line are formed along the scribe line in a first protective film provided below a second protective film which protects element forming regions when a wafer is divided into parts by a laser dicing, and the first groove and the second groove are filled with the second protective film. Then, the laser dicing is performed on a region between the first groove and the second groove along the scribe line from the surface where the second protective film is formed to form a cutting groove that reaches at least a predetermined depth of the multi-layer interconnect.

Abstract: A semiconductor device including a substrate, a semiconductor chip mounted on the substrate, and an encapsulation resin encapsulating the semiconductor chip, wherein the encapsulation resin contains a first resin region composed of a first resin composition, a second resin region composed of a second resin composition, and a mixed layer formed between the first resin region and the second resin region so as to have the first resin composition and the second resin composition mixed therein is provided.

Abstract: In a method of manufacturing a semiconductor device, a first groove and a second groove each having a width less than that of a scribe line are formed along the scribe line in a first protective film provided below a second protective film which protects element forming regions when a wafer is divided into parts by a laser dicing, and the first groove and the second groove are filled with the second protective film. Then, the laser dicing is performed on a region between the first groove and the second groove along the scribe line from the surface where the second protective film is formed to form a cutting groove that reaches at least a predetermined depth of the multi-layer interconnect.

Abstract: A semiconductor wafer 1 has first scribe lines 31 in two mutually perpendicular directions which have a first width and divide the semiconductor wafer 1 into a plurality of areas; second scribe lines 32 which have a second width smaller than the first width and divide the area into a plurality of semiconductor chip areas 2; an electrode pad 5 formed along the edge of the semiconductor chip area 2; and a metal-containing accessory pattern 4 disposed in the scribe lines. In the second scribe lines 32, the accessory pattern 4 is absent in at least the outermost surface in an area adjacent to the edge having the electrode pad 5 in the chip area 2.

Abstract: Differences in contraction forces of a sealing resin can be alleviated and strain on a package can be reduced even when electronic components are unevenly positioned on a substrate. An electronic device (100) includes a substrate 102, electronic components (104, 108) mounted on one face of the substrate 102, and a sealing resin 118 formed on the one face of the substrate 102 and which seals the electronic components. The sealing resin 118 includes a first resin region 120 made up of a first resin composition and a second resin region 122 made up of a second resin composition, and is formed so as to have, as seen in planar view, a region in which only the first resin region 120 exists and a region in which only the second resin region 122 exists.

Abstract: A semiconductor device including a substrate, a semiconductor chip mounted on the substrate, and an encapsulation resin encapsulating the semiconductor chip, wherein the encapsulation resin contains a first resin region composed of a first resin composition, a second resin region composed of a second resin composition, and a mixed layer formed between the first resin region and the second resin region so as to have the first resin composition and the second resin composition mixed therein is provided.

Abstract: A semiconductor wafer 1 has first scribe lines 31 in two mutually perpendicular directions which have a first width and divide the semiconductor wafer 1 into a plurality of areas; second scribe lines 32 which have a second width smaller than the first width and divide the area into a plurality of semiconductor chip areas 2; an electrode pad 5 formed along the edge of the semiconductor chip area 2; and a metal-containing accessory pattern 4 disposed in the scribe lines. In the second scribe lines 32, the accessory pattern 4 is absent in at least the outermost surface in an area adjacent to the edge having the electrode pad 5 in the chip area 2.

Abstract: A semiconductor wafer 1 has first scribe lines 31 in two mutually perpendicular directions which have a first width and divide the semiconductor wafer 1 into a plurality of areas; second scribe lines 32 which have a second width smaller than the first width and divide the area into a plurality of semiconductor chip areas 2; an electrode pad 5 formed along the edge of the semiconductor chip area 2; and a metal-containing accessory pattern 4 disposed in the scribe lines. In the second scribe lines 32, the accessory pattern 4 is absent in at least the outermost surface in an area adjacent to the edge having the electrode pad 5 in the chip area 2.

Abstract: A semiconductor wafer 1 has first scribe lines 31 in two mutually perpendicular directions which have a first width and divide the semiconductor wafer 1 into a plurality of areas; second scribe lines 32 which have a second width smaller than the first width and divide the area into a plurality of semiconductor chip areas 2; an electrode pad 5 formed along the edge of the semiconductor chip area 2; and a metal-containing accessory pattern 4 disposed in the scribe lines. In the second scribe lines 32, the accessory pattern 4 is absent in at least the outermost surface in an area adjacent to the edge having the electrode pad 5 in the chip area 2.