Abstract: An evaluation method includes the steps of forming a dummy pattern having a patterned part with the same critical dimension as a minimum critical dimension of an actual device having a fine pattern that is so fine that a probe for a continuity test cannot be connected to both ends of the fine pattern, in forming the fine pattern, while connecting both ends of the dummy pattern to a pair of pads to which the probe is connectible, performing the continuity test of the dummy pattern using the probe and the pads, and evaluating an insulating characteristic of the fine pattern based on a result of the continuity test.

Abstract: The method of making the magnetic resistance element comprises the steps of: forming a first magnetizable layer, a non-magnetizable layer and a second magnetizable layer, in this order, on an insulating layer; providing a resist layer for forming a main part of the magnetic resistance element on the second magnetizable layer; etching side faces of the first magnetizable layer, the non-magnetizable layer and the second magnetizable layer to form into slope faces by ion milling from the second magnetizable layer side; forming terminals on the slope faces; and removing the resist layer, wherein a part of the first magnetizable layer which is located outside of the slope faces is left on the insulating layer when the side faces of the first magnetizable layer, the non-magnetizable layer and the second magnetizable layer are etched by ion milling.

Abstract: The method of making the magnetic resistance element comprises the steps of: forming a first magnetizable layer, a non-magnetizable layer and a second magnetizable layer, in this order, on an insulating layer; providing a resist layer for forming a main part of the magnetic resistance element on the second magnetizable layer; etching side faces of the first magnetizable layer, the non-magnetizable layer and the second magnetizable layer to form into slope faces by ion milling from the second magnetizable layer side; forming terminals on the slope faces; and removing the resist layer, wherein a part of the first megnetizable layer which is located outside of the slope faces is left on the insulating layer when the side faces of the first magnetizable layer, the non-magnetizable layer and the second magnetizable layer are etched by ion milling.

Abstract: The method of making the magnetic resistance element comprises the steps of: forming a first magnetizable layer, a non-magnetizable layer and a second magnetizable layer, in this order, on an insulating layer; providing a resist layer for forming a main part of the magnetic resistance element on the second magnetizable layer; etching side faces of the first magnetizable layer, the non-magnetizable layer and the second magnetizable layer to form into slope faces by ion milling from the second magnetizable layer side; forming terminals on the slope faces; and removing the resist layer, wherein a part of the first magnetizable layer which is located outside of the slope faces is left on the insulating layer when the side faces of the first magnetizable layer, the non-magnetizable layer and the second magnetizable layer are etched by ion milling.

Abstract: According to a method of manufacturing a thin film magnetic head, a magnetoresistive device and an alumina layer are formed on a substrate, then the alumina layer is covered with a covering layer made of metal such as Ti having a thickness of more than 10 nm, then a photoresist film is formed on the covering layer, and then an opening is formed by exposing and developing the photoresist film. In turn, a magnetic metal film is formed on an allover surface, then the photoresist film and the magnetic metal film thereon are removed. The thin film magnetic head structured as above may provide a good magnetic characteristic since it has the covering layer on the alumina layer to prevent the alumina layer from being corroded by liquid developer. In addition, a magnetic recording unit employing the thin film magnetic head may reproduce data recorded with high density.