Abstract: A magnetic sensor includes: a substrate; and first and second magnetoresistive devices on one surface of the substrate. Each of the first and second magnetoresistive devices includes: a fixed layer having an easy magnetization axis perpendicular to the one surface and having a fixed magnetization direction; a free layer having a variable magnetization direction; and an intermediate layer made of a non-magnetic material and arranged between the fixed layer and the free layer. The fixed layer includes a first ferromagnetic layer, a second ferromagnetic layer, and a non-magnetic layer arranged between the first ferromagnetic layer and the second ferromagnetic layer.

Abstract: A magnetic sensor includes: a substrate; and first and second magnetoresistive devices on one surface of the substrate. Each of the first and second magnetoresistive devices includes: a fixed layer having an easy magnetization axis perpendicular to the one surface and having a fixed magnetization direction; a free layer having a variable magnetization direction; and an intermediate layer made of a non-magnetic material and arranged between the fixed layer and the free layer. The fixed layer includes a first ferromagnetic layer, a second ferromagnetic layer, and a non-magnetic layer arranged between the first ferromagnetic layer and the second ferromagnetic layer.

Abstract: A magnetic sensor includes a substrate that has a main surface, a free layer that has a magnetic easy axis in an in-plane direction parallel to the main surface, an intermediate layer that is disposed between the substrate and the free layer, and a fixed layer that is disposed between the substrate and the intermediate layer. The fixed layer includes: a first ferromagnetic layer a magnetization direction of which is fixed in a first direction that is nonparallel to the main surface; a second ferromagnetic layer a magnetization direction of which is fixed in a second direction in which a component of a direction parallel to a normal line of the main surface is opposite to the first direction; and a nonmagnetic layer that is disposed between the first ferromagnetic layer and the second ferromagnetic layer.

Abstract: In a magnetic sensor, a pinned layer covers a wiring layer on a side opposite to a substrate with respect to the wiring layer and includes a bent portion having a bent shape in cross section. Free layers are arranged on a side opposite to the substrate with respect to the pinned layer. The size of the free layers in a planar direction is set to a size smaller than the size of the pinned layer in the planar direction. A magnetic field leaking from the pinned layer may form a closed loop adjacent to the substrate, that is, on a side opposite to the free layers with respect to the substrate. Therefore, influence of the magnetic field leaking from the pinned layer on the free layers can be restricted.

Abstract: A magnetic sensor includes a magnetization fixed layer, a magnetic field detecting layer, and an intermediate layer. The magnetization fixed layer is formed into a thin-film shape, and a magnetization direction of the magnetization fixed layer is fixed in a direction parallel to an in-plane direction. A magnetization direction of the magnetic field detecting layer changes depending on an external magnetic field. The intermediate layer is disposed between the magnetization fixed layer and the magnetic field detecting layer, and a resistance value of the intermediate layer changes depending on an angle between the magnetization direction of the magnetization fixed layer and the magnetization direction of the magnetic field detecting layer. A magnetization amount per unit area of the magnetic field detecting layer is less than 0.2 [memu/cm2].

Abstract: A TMR element and a corrective AMR element are series-connected between a power supply and a ground. The resistance value of the corrective AMR element is set so as to offset an output error in the rotation angle of an external magnetic field, which is included in the resistance value of the TMR element. The resistance value of the corrective AMR element is smaller than that of the TMR element. An increased voltage can be applied from the power supply to the TMR element. It is possible to increase, in the resistance value of the TMR element, the amount of change that depends on the rotation angle of the external magnetic field. This makes it possible to increase, in the output of a magnetic sensor, the amount of change that depends on the rotation angle of the external magnetic field. The sensitivity of the magnetic sensor can be increased.

Abstract: A magnetic sensor includes a magnetization fixed layer, a magnetic field detecting layer, and an intermediate layer. The magnetization fixed layer is formed into a thin-film shape, and a magnetization direction of the magnetization fixed layer is fixed in a direction parallel to an in-plane direction. A magnetization direction of the magnetic field detecting layer changes depending on an external magnetic field. The intermediate layer is disposed between the magnetization fixed layer and the magnetic field detecting layer, and a resistance value of the intermediate layer changes depending on an angle between the magnetization direction of the magnetization fixed layer and the magnetization direction of the magnetic field detecting layer. A magnetization amount per unit area of the magnetic field detecting layer is less than 0.2 [memu/cm2].

Abstract: In a magnetic sensor, a pinned layer covers a wiring layer on a side opposite to a substrate with respect to the wiring layer and includes a bent portion having a bent shape in cross section. Free layers are arranged on a side opposite to the substrate with respect to the pinned layer. The size of the free layers in a planar direction is set to a size smaller than the size of the pinned layer in the planar direction. A magnetic field leaking from the pinned layer may form a closed loop adjacent to the substrate, that is, on a side opposite to the free layers with respect to the substrate. Therefore, influence of the magnetic field leaking from the pinned layer on the free layers can be restricted.

Abstract: A magnetic sensor is provided, including: a substrate; a plurality of magneto resistance element portions, disposed above the substrate, each including: a free magnetic layer having a magnetization direction changeable by an external magnetic field; and a pin magnetic layer having a fixed magnetization direction; and a plurality of heater portions corresponding to the magneto resistance element portions, respectively, and configured to heat a corresponding pin magnetic layer, wherein the magnetization direction of the pin magnetic layer of one magneto resistance element portion is different from the magnetization direction of the pin magnetic layer of another magneto resistance element portion on a plane parallel to a surface of the substrate, when the external magnetic field is applied to each of the magneto resistance element portions, the magnetic sensor detects a physical amount based on a change in a resistance of each of the magneto resistance element portions.

Abstract: A TMR element and a corrective AMR element are series-connected between a power supply and a ground. The resistance value of the corrective AMR element is set so as to offset an output error in the rotation angle of an external magnetic field, which is included in the resistance value of the TMR element. The resistance value of the corrective AMR element is smaller than that of the TMR element. An increased voltage can be applied from the power supply to the TMR element. It is possible to increase, in the resistance value of the TMR element, the amount of change that depends on the rotation angle of the external magnetic field. This makes it possible to increase, in the output of a magnetic sensor, the amount of change that depends on the rotation angle of the external magnetic field. The sensitivity of the magnetic sensor can be increased.

Abstract: A manufacturing method of a magnetic sensor, detecting a physical amount based on a resistance change in each MRE while applying an external magnetic field to MREs, includes: preparing a substrate; forming MREs, including a free magnetic layer having a changeable magnetization direction and a pin magnetic layer having a fixed magnetization direction, above the substrate; forming heaters corresponding to MREs; arranging the substrate in the external magnetic field having a magnetic field direction in a first direction parallel to the substrate; and heating with one portion of the heater portions and magnetizing one portion of the pin magnetic layers in the first direction; and arranging the substrate in another external magnetic field having another magnetic field direction in a second direction different from the first direction; and heating with another portion of the heater portions and magnetizing another portion of the pin magnetic layers in the second direction.