Patents by Inventor Takanari Sasaya

Takanari Sasaya has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11387794
    Abstract: In each E-class inverter, an internal voltage detection circuit detects an internal voltage of a resonant type power supply circuit or a matching circuit and adjusts a phase of a driving signal of a MOSFET based on a detected voltage. It is thus possible to match a phase of a current voltage of a sine waveform of each inverter and combine power highly efficiently. Since power combining is performed highly efficiently without using a variable capacitor and variable inductor, it is possible to suppress upsizing of elements and achieve downsizing of a power amplifier circuit.
    Type: Grant
    Filed: December 30, 2019
    Date of Patent: July 12, 2022
    Assignees: DENSO CORPORATION, National University Corporation Toyohashi University of Technology
    Inventors: Takanari Sasaya, Tetsuo Hirano, Takashi Ohira, Naoki Sakai, Takaaki Masaki
  • Publication number: 20200266776
    Abstract: In each E-class inverter, an internal voltage detection circuit detects an internal voltage of a resonant type power supply circuit or a matching circuit and adjusts a phase of a driving signal of a MOSFET based on a detected voltage. It is thus possible to match a phase of a current voltage of a sine waveform of each inverter and combine power highly efficiently. Since power combining is performed highly efficiently without using a variable capacitor and variable inductor, it is possible to suppress upsizing of elements and achieve downsizing of a power amplifier circuit.
    Type: Application
    Filed: December 30, 2019
    Publication date: August 20, 2020
    Inventors: TAKANARI SASAYA, TETSUO HIRANO, TAKASHI OHIRA, NAOKI SAKAI, TAKAAKI MASAKI
  • Patent number: 9203399
    Abstract: A driving circuit for a switching element includes a main current wiring and a substrate. The main current wiring has a flat surface and carries a main current. The substrate has a flat surface mounted on the flat surface of the main current wiring and includes a coil disposed inside. The coil is disposed so as to interlink with a magnetic flux generated depending on the main current of the switching element and is electrically connected such that the coil receives the pulse signal of the signal source and transmits the pulse signal to a control terminal of the switching element.
    Type: Grant
    Filed: October 24, 2012
    Date of Patent: December 1, 2015
    Assignee: DENSO CORPORATION
    Inventors: Akihiro Yamaguchi, Takanari Sasaya
  • Publication number: 20140306739
    Abstract: A driving circuit for a switching element includes a main current wiring and a substrate. The main current wiring has a flat surface and carries a main current. The substrate has a flat surface mounted on the flat surface of the main current wiring and includes a coil disposed inside. The coil is disposed so as to interlink with a magnetic flux generated depending on the main current of the switching element and is electrically connected such that the coil receives the pulse signal of the signal source and transmits the pulse signal to a control terminal of the switching element.
    Type: Application
    Filed: October 24, 2012
    Publication date: October 16, 2014
    Applicant: DENSO CORPORATION
    Inventors: Akihiro Yamaguchi, Takanari Sasaya
  • Patent number: 7778054
    Abstract: In a power switching circuit, a second commutation member has a second commutation path electrically connected in parallel to a first commutation path and a second diode provided in the second commutation path and electrically connected antiparallel to a semiconductor switching element. While the semiconductor switching element is off, the second commutation path allows a second current based on the inductive load to flow therethrough in a forward direction of the second diode within a commutation period. The second diode has a second reverse recovery time shorter than a first reverse recovery time of the first diode. A second inductance of the second commutation path is higher than a first inductance of the first commutation path.
    Type: Grant
    Filed: February 17, 2009
    Date of Patent: August 17, 2010
    Assignee: Denso Corporation
    Inventors: Takanari Sasaya, Takeshi Inoue, Tomonori Kimura
  • Patent number: 7714624
    Abstract: A method for controlling a vertical type MOSFET in a bridge circuit is provided to reduce diode power loss and improve a reverse recovery characteristic. The method includes controlling a forward voltage of a built-in diode of the vertical type MOSFET to be a first forward voltage by setting a gate voltage of the vertical MOSFET to a first gate voltage, so that the vertical type MOSFET is switched into a first off mode; and controlling the forward voltage of the built-in diode of the vertical type MOSFET to be a second forward voltage by setting the gate voltage of the vertical MOSFET to a second gate voltage, so that the vertical type MOSFET is switched into a second off mode.
    Type: Grant
    Filed: April 24, 2008
    Date of Patent: May 11, 2010
    Assignee: Denso Corporation
    Inventors: Hisashi Takasu, Takeshi Inoue, Tomonori Kimura, Takanari Sasaya
  • Publication number: 20090206812
    Abstract: In a power switching circuit, a second commutation member has a second commutation path electrically connected in parallel to a first commutation path and a second diode provided in the second commutation path and electrically connected antiparallel to a semiconductor switching element. While the semiconductor switching element is off, the second commutation path allows a second current based on the inductive load to flow therethrough in a forward direction of the second diode within a commutation period. The second diode has a second reverse recovery time shorter than a first reverse recovery time of the first diode. A second inductance of the second commutation path is higher than a first inductance of the first commutation path.
    Type: Application
    Filed: February 17, 2009
    Publication date: August 20, 2009
    Applicant: DENSO CORPORATION
    Inventors: Takanari Sasaya, Takeshi Inoue, Tomonori Kimura
  • Publication number: 20080265975
    Abstract: A method for controlling a vertical type MOSFET in a bridge circuit is provided to reduce diode power loss and improve a reverse recovery characteristic. The method includes controlling a forward voltage of a built-in diode of the vertical type MOSFET to be a first forward voltage by setting a gate voltage of the vertical MOSFET to a first gate voltage, so that the vertical type MOSFET is switched into a first off mode; and controlling the forward voltage of the built-in diode of the vertical type MOSFET to be a second forward voltage by setting the gate voltage of the vertical MOSFET to a second gate voltage, so that the vertical type MOSFET is switched into a second off mode.
    Type: Application
    Filed: April 24, 2008
    Publication date: October 30, 2008
    Applicant: DENSO CORPORATION
    Inventors: Hisashi Takasu, Takeshi Inoue, Tomonori Kimura, Takanari Sasaya
  • Patent number: 7122982
    Abstract: A rotation information detection device detects rotation information of a DC motor based on a surge component waveform superimposed on a voltage waveform between the terminals of the DC motor or a current waveform of the DC motor, a circuit is provided which supplies a current of a current value Ipwm 45% during motor forward rotation or Ipwm 55% during reverse motor rotation to the motor over the period from when the motor starts braking operation to when it stops.
    Type: Grant
    Filed: May 26, 2005
    Date of Patent: October 17, 2006
    Assignee: Denso Corporation
    Inventors: Takanari Sasaya, Michiru Takahashi
  • Publication number: 20060017412
    Abstract: A rotation information detection device detects rotation information of a DC motor based on a surge component waveform superimposed on a voltage waveform between the terminals of the DC motor or a current waveform of the DC motor, a circuit is provided which supplies a current of a current value Ipwm 45% during motor forward rotation or Ipwm 55% during reverse motor rotation to the motor over the period from when the motor starts braking operation to when it stops.
    Type: Application
    Filed: May 26, 2005
    Publication date: January 26, 2006
    Inventors: Takanari Sasaya, Michiru Takahashi
  • Patent number: 6191007
    Abstract: Methods for manufacturing semiconductor substrates in which a semiconductor layer for forming semiconductor device therein is formed on a supporting substrate with an insulating film interposed between, with which in forming the semiconductor layer on a substrate on which a buried pattern structure has been formed it is possible to greatly increase the film thickness uniformity of the semiconductor layer and the film thickness controllability, particularly when the semiconductor layer is being formed as an extremely thin film. As a result, it is possible to achieve improved quality and characteristics of the semiconductor substrates and make possible the deployment of such semiconductor substrates to various uses.
    Type: Grant
    Filed: April 28, 1998
    Date of Patent: February 20, 2001
    Assignee: Denso Corporation
    Inventors: Masaki Matsui, Shoichi Yamauchi, Hisayoshi Ohshima, Kunihiro Onoda, Akiyoshi Asai, Takanari Sasaya, Takeshi Enya, Jun Sakakibara
  • Patent number: 6188526
    Abstract: A variable focus lens device having a temperature compensation function whose construction is simple and which can be inexpensively manufactured. The device has a lens member including a lens container having a transparent elastic film, a transparent sealing member forming an internal volume, and a transparent liquid filling the internal volume, a stack-type piezoelectric actuator for varying the focus of the lens member by deforming the transparent elastic film by fluctuating the pressure inside the internal volume, and a tank connected to the internal volume by narrow passages. The tank and the narrow passages absorb temperature fluctuation components of the transparent liquid, which varies due to thermal expansion and contraction. The tank and the passages thereby form a temperature compensator, that, because the passages are narrow, does not react to sudden oscillating pressure components caused by the stack-type piezoelectric actuator.
    Type: Grant
    Filed: June 25, 1999
    Date of Patent: February 13, 2001
    Assignee: Denso Corporation
    Inventors: Takanari Sasaya, Takashi Kaneko, Nobuaki Kawahara