Abstract: Provided is a semiconductor device manufacturing method including a process of annealing a semiconductor wafer in a state in which a supported portion on a lower surface of the semiconductor wafer is supported by using a supporting portion, wherein the supported portion includes one or a plurality of supporting portions and the supporting portion includes one or a plurality of supporting portions, the method comprising: forming impurity regions including a first impurity in a region which is overlapped with the supported portion in a top view and which is apart from an edge of the semiconductor wafer; annealing the semiconductor wafer in a state in which the lower surface of the semiconductor wafer is supported by the supporting portion; and removing the impurity regions by removing a region including the lower surface of the semiconductor wafer.