Patents by Inventor Takanobu Ambo

Takanobu Ambo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7893727
    Abstract: For a semiconductor integrated circuit device such as AFE including a CDS amplifier, in case of excessive signal input to the CDS amplifier, a technique capable of preventing the response characteristic of the CDS amplifier from deteriorating is provided. In the AFE including the CDS amplifier, the CDS amplifier is prevented from becoming saturated by detecting an excessive signal input and triggering the reset of the CDS amplifier. Thereby, no abnormality occurs in the transient response of the CDS amplifier. Specifically, comparison of input signals to the CDS amplifier is performed by a comparator and the CDS amplifier is reset by a reset circuit (by fixing the input terminals of the CDS amplifier to a constant voltage) in case of excessive signal input, so that the CDS amplifier will not amplify excessive signal inputs.
    Type: Grant
    Filed: March 10, 2009
    Date of Patent: February 22, 2011
    Assignee: Renesas Electronics Corporation
    Inventors: Takanobu Ambo, Hirokazu Shimizu
  • Patent number: 7714264
    Abstract: Disclosed herein is a semiconductor integrated circuit device such as a for-camera preprocessing LSI suitable for a semiconductor integrated circuit and having improved responsiveness. In a D/A converter circuit for generating a feedback signal for compensating for black level variation in a for-camera preprocessing LSI, first-conductivity-type MOSFETs as first current sources produce currents corresponding to digital signals. The digital signals are supplied to first-conductivity-type first differential MOSFETs and second-conductivity-type second differential MOSFETs, with the gates and drains of the first differential MOSFETs and the gates and drains of the second differential MOSFETs being connected together respectively.
    Type: Grant
    Filed: December 14, 2008
    Date of Patent: May 11, 2010
    Assignee: Renesas Technology Corp.
    Inventors: Toshio Mochizuki, Takanobu Ambo
  • Publication number: 20090267653
    Abstract: For a semiconductor integrated circuit device such as AFE including a CDS amplifier, in case of excessive signal input to the CDS amplifier, a technique capable of preventing the response characteristic of the CDS amplifier from deteriorating is provided. In the AFE including the CDS amplifier, the CDS amplifier is prevented from becoming saturated by detecting an excessive signal input and triggering the reset of the CDS amplifier. Thereby, no abnormality occurs in the transient response of the CDS amplifier. Specifically, comparison of input signals to the CDS amplifier is performed by a comparator and the CDS amplifier is reset by a reset circuit (by fixing the input terminals of the CDS amplifier to a constant voltage) in case of excessive signal input, so that the CDS amplifier will not amplify excessive signal inputs.
    Type: Application
    Filed: March 10, 2009
    Publication date: October 29, 2009
    Inventors: Takanobu Ambo, Hirokazu Shimizu
  • Publication number: 20090095884
    Abstract: Disclosed herein is a semiconductor integrated circuit device such as a for-camera preprocessing LSI suitable for a semiconductor integrated circuit and having improved responsiveness. In a D/A converter circuit for generating a feedback signal for compensating for black level variation in a for-camera preprocessing LSI, first-conductivity-type MOSFETs as first current sources produce currents corresponding to digital signals. The digital signals are supplied to first-conductivity-type first differential MOSFETs and second-conductivity-type second differential MOSFETs, with the gates and drains of the first differential MOSFETs and the gates and drains of the second differential MOSFETs being connected together respectively.
    Type: Application
    Filed: December 14, 2008
    Publication date: April 16, 2009
    Inventors: Toshio MOCHIZUKI, Takanobu AMBO
  • Patent number: 7488927
    Abstract: Disclosed herein is a semiconductor integrated circuit device such as a for-camera preprocessing LSI suitable for a semiconductor integrated circuit and having improved responsiveness. In a D/A converter circuit for generating a feedback signal for compensating for black level variation in a for-camera preprocessing LSI, first-conductivity-type MOSFETs as first current sources produce currents corresponding to digital signals. The digital signals are supplied to first-conductivity-type first differential MOSFETs and second-conductivity-type second differential MOSFETs, with the gates and drains of the first differential MOSFETs and the gates and drains of the second differential MOSFETs being connected together respectively.
    Type: Grant
    Filed: January 26, 2007
    Date of Patent: February 10, 2009
    Assignee: Renesas Technology Corp.
    Inventors: Toshio Mochizuki, Takanobu Ambo
  • Patent number: 7295143
    Abstract: There is a need for providing a variable amplifier circuit suited for a semiconductor integrated circuit and a high-performance camera preprocessing LSI using the variable amplifier circuit. At first timing, a first input capacitor acquires a first signal. An amplifier circuit amplifies a second signal acquired to the second input capacitor according to a gain corresponding to a capacity ratio between the second input capacitor and a feedback capacitor composed of a variable capacitor device. At second timing, the second input capacitor acquires a second signal. The amplifier circuit amplifies the first signal according to a gain corresponding to a capacity ratio between the first input capacitor and the feedback capacitor. A variable gain amplifier circuit interleavingly amplifies the first signal and the second signal in synchronization with the first timing and the second timing.
    Type: Grant
    Filed: July 28, 2006
    Date of Patent: November 13, 2007
    Assignee: Renesas Technology Corp.
    Inventors: Takanobu Ambo, Eiki Imaizumi, Satoshi Jimbo
  • Publication number: 20070229677
    Abstract: Disclosed herein is a semiconductor integrated circuit device such as a for-camera preprocessing LSI suitable for a semiconductor integrated circuit and having improved responsiveness. In a D/A converter circuit for generating a feedback signal for compensating for black level variation in a for-camera preprocessing LSI, first-conductivity-type MOSFETs as first current sources produce currents corresponding to digital signals. The digital signals are supplied to first-conductivity-type first differential MOSFETs and second-conductivity-type second differential MOSFETs, with the gates and drains of the first differential MOSFETs and the gates and drains of the second differential MOSFETs being connected together respectively.
    Type: Application
    Filed: January 26, 2007
    Publication date: October 4, 2007
    Inventors: Toshio Mochizuki, Takanobu Ambo
  • Publication number: 20070030262
    Abstract: There is a need for providing a variable amplifier circuit suited for a semiconductor integrated circuit and a high-performance camera preprocessing LSI using the variable amplifier circuit. At first timing, a first input capacitor acquires a first signal. An amplifier circuit amplifies a second signal acquired to the second input capacitor according to a gain corresponding to a capacity ratio between the second input capacitor and a feedback capacitor composed of a variable capacitor device. At second timing, the second input capacitor acquires a second signal. The amplifier circuit amplifies the first signal according to a gain corresponding to a capacity ratio between the first input capacitor and the feedback capacitor. A variable gain amplifier circuit interleavingly amplifies the first signal and the second signal in synchronization with the first timing and the second timing.
    Type: Application
    Filed: July 28, 2006
    Publication date: February 8, 2007
    Inventors: Takanobu Ambo, Eiki Imaizumi, Satoshi Jimbo