Abstract: According to one embodiment, it includes a stacked body including N-number of layers (N is an integer of 2 or more) stacked on a semiconductor substrate, opening portions penetrating the stacked body in a stacking direction, columnar bodies respectively disposed in the opening portions, and a slit dividing M-number of layers (M is an integer of 1 or more and (N?2) or less) of the stacked body in a horizontal direction from above, wherein the slit is formed with lateral surfaces respectively having a spatial periodicity in a horizontal plane.

Abstract: According to one embodiment, it includes a stacked body including N-number of layers (N is an integer of 2 or more) stacked on a semiconductor substrate, opening portions penetrating the stacked body in a stacking direction, columnar bodies respectively disposed in the opening portions, and a slit dividing M-number of layers (M is an integer of 1 or more and (N-2) or less) of the stacked body in a horizontal direction from above, wherein the slit is formed with lateral surfaces respectively having a spatial periodicity in a horizontal plane.

Abstract: According to one embodiment, it includes a stacked body including N-number of layers (N is an integer of 2 or more) stacked on a semiconductor substrate, opening portions penetrating the stacked body in a stacking direction, columnar bodies respectively disposed in the opening portions, and a slit dividing M-number of layers (M is an integer of 1 or more and (N?2) or less) of the stacked body in a horizontal direction from above, wherein the slit is formed with lateral surfaces respectively having a spatial periodicity in a horizontal plane.

Abstract: A semiconductor manufacturing method according to an embodiment includes forming a first film on a semiconductor substrate. The semiconductor manufacturing method includes forming cavities in the first film. The semiconductor manufacturing method includes forming a second film inside the cavities by a CVD method using first gas containing a component of the second film, detecting a first time point at which the second film blocks openings of the cavities in forming the second film, and ending forming of the second film at a second time point at which a predetermined time has elapsed from the first time point.

Abstract: According to one embodiment, it includes a stacked body including N-number of layers (N is an integer of 2 or more) stacked on a semiconductor substrate, opening portions penetrating the stacked body in a stacking direction, columnar bodies respectively disposed in the opening portions, and a slit dividing M-number of layers (M is an integer of 1 or more and (N-2) or less) of the stacked body in a horizontal direction from above, wherein the slit is formed with lateral surfaces respectively having a spatial periodicity in a horizontal plane.

Abstract: According to one embodiment, it includes a stacked body including N-number of layers (N is an integer of 2 or more) stacked on a semiconductor substrate, opening portions penetrating the stacked body in a stacking direction, columnar bodies respectively disposed in the opening portions, and a slit dividing M-number of layers (M is an integer of 1 or more and (N?2) or less) of the stacked body in a horizontal direction from above, wherein the slit is formed with lateral surfaces respectively having a spatial periodicity in a horizontal plane.

Abstract: A semiconductor manufacturing method according to an embodiment includes forming a first film on a semiconductor substrate. The semiconductor manufacturing method includes forming cavities in the first film. The semiconductor manufacturing method includes forming a second film inside the cavities by a CVD method using first gas containing a component of the second film, detecting a first time point at which the second film blocks openings of the cavities in forming the second film, and ending forming of the second film at a second time point at which a predetermined time has elapsed from the first time point.

Abstract: According to one embodiment, it includes a stacked body including N-number of layers (N is an integer of 2 or more) stacked on a semiconductor substrate, opening portions penetrating the stacked body in a stacking direction, columnar bodies respectively disposed in the opening portions, and a slit dividing M-number of layers (M is an integer of 1 or more and (N?2) or less) of the stacked body in a horizontal direction from above, wherein the slit is formed with lateral surfaces respectively having a spatial periodicity in a horizontal plane.

Abstract: A semiconductor manufacturing method according to an embodiment includes forming a first film on a semiconductor substrate. The semiconductor manufacturing method includes forming cavities in the first film. The semiconductor manufacturing method includes forming a second film inside the cavities by a CVD method using first gas containing a component of the second film, detecting a first time point at which the second film blocks openings of the cavities in forming the second film, and ending forming of the second film at a second time point at which a predetermined time has elapsed from the first time point.

Abstract: According to an embodiment, a semiconductor memory device comprises a plurality of control gate electrodes, a semiconductor layer, a charge accumulation layer, and a contact. The plurality of control gate electrodes are stacked on a substrate. The semiconductor layer has one end thereof connected to the substrate, has as its longitudinal direction a direction perpendicular to the substrate, and faces the plurality of control gate electrodes. The charge accumulation layer is positioned between the control gate electrode and the semiconductor layer. The contact has its lower end connected to the substrate, and has its lower end and its upper end configured from a metal silicide.

Abstract: A coating composition that can be applied to a lens, a method of making the coating composition, and a coated lens comprising a cured coating composition of the invention are disclosed. The coating composition is produced by providing a mixture comprising metal oxide colloid particles and an organosilicon compound, and adding an acetylacetonate metal salt and an aliphatic amine to the mixture.

Abstract: A coating composition that can be applied to a lens, a method of making the coating composition, and a coated lens comprising a cured coating composition of the invention are disclosed. The coating composition is produced by providing a mixture comprising metal oxide colloid particles and an organosilicon compound, and adding an acetylacetonate metal salt and an aliphatic amine to the mixture.

Abstract: An optical element having, on an optical substrate, a cured film formed of a coating agent containing (A) modified stannic oxide-zirconium oxide composite colloid particles as prepared by coating at least a part of the surfaces of stannic oxide-zirconium oxide composite colloid particles with stannic oxide-tungsten oxide-silicon oxide composite colloid particles, and (B) an organosilicon compound.

Abstract: A synthetic resin body panel for mounting on a skeletal automobile body to cover the entire door sill and the front lower portion of the rear fender with the front edge offset inwardly to be clamped between the front fender and auto body to allow movement for thermal expansion and contraction. A sealing member is clamped between the rearmost portion of the panel and the skeletal body of the rear fender for preventing water, pebbles, etc. from entering the space between the panel and body.