Abstract: A method for producing an isocyanate group-containing siloxane compound is provided. In this method, a halogenated siloxane compound represented by the following general formula (1): or the following general formula (2) wherein R1, R2, R3, and R4 are independently hydrogen atom, a monovalent hydrocarbon group containing 1 to 8 carbon atoms, or a siloxy group represented by OSiR5R6R7 wherein R8, R6, and R7 are a monovalent hydrocarbon group containing 1 to 8 carbon atoms, X is a halogen atom, n is an integer of 1 to 10, a is 0, 1, or 2, and b is an integer of 2 to 9; is reacted with a cyanate salt represented by the following general formula (3): Mm+(OCN)m??(3) wherein M represents an alkali metal or an alkaline earth metal, and m is 1 or 2. The isocyanate group-containing siloxane compound produced is represented by the following general formula (4): or the following general formula (5): wherein R1, R2, R3, R4, n, q, and a are as defined above.

Abstract: A method for producing an isocyanate group-containing siloxane compound is provided. In this method, a halogenated siloxane compound represented by the following general formula (1): or the following general formula (2) wherein R1, R2, R3, and R4 are independently hydrogen atom, a monovalent hydrocarbon group containing 1 to 8 carbon atoms, or a siloxy group represented by OSiR5R6R7 wherein R8, R6, and R7 are a monovalent hydrocarbon group containing 1 to 8 carbon atoms, X is a halogen atom, n is an integer of 1 to 10, a is 0, 1, or 2, and b is an integer of 2 to 9; is reacted with a cyanate salt represented by the following general formula (3): Mm+(OCN)m ??(3) wherein M represents an alkali metal or an alkaline earth metal, and m is 1 or 2. The isocyanate group-containing siloxane compound produced is represented by the following general formula (4): or the following general formula (5): wherein R1, R2, R3, R4, n, q, and a are as defined above.

Abstract: High-purity trimethylaluminum has the following impurity contents: organosilicon components?0.5 ppm, chlorine components?20 ppm, hydrocarbon components?1,000 ppm, Ca?0.05 ppm, Fe?0.05 ppm, Mg?0.05 ppm, Na?0.05 ppm, Si (Si components other than the organosilicon components)?0.07 ppm, Zn?0.05 ppm, and S?0.05 ppm. The high-purity trimethylaluminum can be obtained by removing impurities from crude trimethylaluminum through distillation and evaporation.

Abstract: A method of purifying an organometallic compound comprising distilling the organometallic compound for purification while blowing an inert gas through a vapor of the organopolysiloxane, thereby removing from the organometallic compound an impurity having a higher vapor pressure than the organometallic compound.

Abstract: A contaminated Group III metal hydrocarbon is purified by providing an adduct of Group III metal hydrocarbon with a Lewis base in a solvent having a boiling point which is up to 200° C., but at least 30° C. higher than the boiling point of the Group III metal hydrocarbon, separating the solvent from the adduct, and heating the adduct for thermal dissociation, thereby releasing the Group III metal hydrocarbon in high purity form.

Abstract: An organometallic compound vaporizing and feeding system includes a carrier gas feed passageway connecting a carrier gas source to a container containing an organometallic compound MO and having a carrier gas mass flow controller, an MO gas passageway connecting the container to an in-line monitor for transporting the MO gas, a sample gas passageway connecting the in-line monitor to a sample inlet of an ICP spectrometer, a standard gas passageway connecting a gas cylinder filled with a calibration standard gas to the sample gas passageway and having a standard gas mass flow controller, and a diluent gas passageway connected to the standard gas passageway for passing a diluent gas for adjusting the concentration of the standard gas and having a diluent gas mass flow controller.

Abstract: High-purity trimethylaluminum has the following impurity contents: organosilicon components?0.5 ppm, chlorine components?20 ppm, hydrocarbon components?1,000 ppm, Ca?0.05 ppm, Fe?0.05 ppm, Mg?0.05 ppm, Na?0.05 ppm, Si (Si components other than the organosilicon components)?0.07 ppm, Zn?0.05 ppm, and S?0.05 ppm. The high-purity trimethylaluminum can be obtained by removing impurities from crude trimethylaluminum through distillation and evaporation.

Abstract: A method of purifying an organometallic compound comprising distilling the organometallic compound for purification while blowing an inert gas through a vapor of the organopolysiloxane, thereby removing from the organometallic compound an impurity having a higher vapor pressure than the organometallic compound.

Abstract: Trialkylgallium is prepared by reacting a gallium halide or alkyl gallium with trialkylaluminum in a solvent having a boiling point which is at least 10° C. higher than the boiling point of the trialkylgallium, such as mesitylene or o-dichlorobenzene. High purity alkyl gallium is obtained in high yields.

Abstract: A contaminated Group III metal hydrocarbon is purified by providing an adduct of Group III metal hydrocarbon with a Lewis base in a solvent having a boiling point which is up to 200° C., but at least 30° C. higher than the boiling point of the Group III metal hydrocarbon, separating the solvent from the adduct, and heating the adduct for thermal dissociation, thereby releasing the Group III metal hydrocarbon in high purity form.

Abstract: Trialkylgallium is prepared by reacting a gallium halide or alkyl gallium with trialkylaluminum in a solvent having a boiling point which is at least 10° C. higher than the boiling point of the trialkylgallium, such as mesitylene or o-dichlorobenzene. High purity alkyl gallium is obtained in high yields.

Abstract: A liquid organometallic compound vaporizing and feeding system includes a container containing a liquid organometallic compound MO, a vaporizer for vaporizing MO, a liquid passageway connecting the container to the vaporizer and having a liquid MO mass flow controller, a carrier gas source, a carrier gas passageway connecting the source to the vaporizer and having a carrier gas mass flow controller, a sample gas passageway connecting the vaporizer to an ICP emission spectrometer and having an in-line monitor, a calibration standard gas cylinder, and a standard gas passageway connecting the cylinder to the sample gas passageway downstream of the in-line monitor and having a standard gas mass flow controller.

Abstract: An organometallic compound vaporizing and feeding system includes a carrier gas feed passageway connecting a carrier gas source to a container containing an organometallic compound MO and having a carrier gas mass flow controller, an MO gas passageway connecting the container to an in-line monitor for transporting the MO gas, a sample gas passageway connecting the in-line monitor to a sample inlet of an ICP spectrometer, a standard gas passageway connecting a gas cylinder filled with a calibration standard gas to the sample gas passageway and having a standard gas mass flow controller, and a diluent gas passageway connected to the standard gas passageway for passing a diluent gas for adjusting the concentration of the standard gas and having a diluent gas mass flow controller.