Abstract: A charging connector accommodation apparatus for use in a truck-type or pickup-type electric vehicle includes a box body having an opening facing an outside of a vehicle body and an opening facing an inside of the vehicle body, and a lid member. The box body includes a frame body, and a center panel disposed inside the frame body. A bent edge folded toward the outside and joined to the frame body is provided at the center panel. A highly rigid frame section enhanced in rigidity by the bent edge is disposed is provided more outward to the outside than the center panel, and a hollow frame section having rigidity lower than that of the highly rigid frame section is disposed is provided more inward to the inside than the center panel of the box body.

Abstract: A charging connector accommodation apparatus for use in a truck-type or pickup-type electric vehicle includes a box body having an opening facing an outside of a vehicle body and an opening facing an inside of the vehicle body, and a lid member. The box body includes a frame body, and a center panel disposed inside the frame body. A bent edge folded toward the outside and joined to the frame body is provided at the center panel. A highly rigid frame section enhanced in rigidity by the bent edge is disposed is provided more outward to the outside than the center panel, and a hollow frame section having rigidity lower than that of the highly rigid frame section is disposed is provided more inward to the inside than the center panel of the box body.

Abstract: The present invention is a method for reclaiming a silicon wafer in which a thin film has been formed on its surface, at least, comprising a thin-film removing step for removing the thin film having been formed on the silicon wafer and a mirror-polishing step for mirror-polishing at least one side of the thin-film-removed silicon wafer, wherein, before performing the mirror-polishing step, gettering-site forming treatment for applying damage load to at least one side of the silicon wafer is performed and then the silicon wafer is subjected to heat treatment, thereby impurities inside the silicon wafer are reduced. Thereby, there is provided a method for reclaiming a silicon wafer, in which a thin film such as a metal thin film having been formed on a silicon wafer can be removed, and impurities having diffused inside the wafer can be also reduced, thereby silicon wafers having very little metal contamination can be stably obtained.

Abstract: A vehicle front-end body structure, includes: front side members provided along a left side and a right side of a front portion of a vehicle body, a front deck cross member provided between side walls of the vehicle body, including joint portions for joining the front deck cross member to the side walls; and a connecting member made up of a pipe material including end portions and a middle portion disposed between the end portions. The end portions are joined to the vicinities of the joint portions respectively. The middle portion is joined to the front side members respectively.

Abstract: A vehicle front-end body structure, includes: front side members provided along a left side and a right side of a front portion of a vehicle body, a front deck cross member provided between side walls of the vehicle body, including joint portions for joining the front deck cross member to the side walls; and a connecting member made up of a pipe material including end portions and a middle portion disposed between the end portions. The end portions are joined to the vicinities of the joint portions respectively. The middle portion is joined to the front side members respectively.

Abstract: A convolution of input data S.sub.0 and a Gabor function G.sub..alpha.,.omega. is implemented by a processing unit (20) to obtain a wavelet coefficient T.sub.g (2.sup.0,b) of a 0th stage. The input data S.sub.0 is applied to a low-pass filter (30) and is subjected to Gaussian-type filtering so as to be converted into input data S.sub.1 for a 1st stage. The frequency of the high-frequency components of this input data is halved by this filtering. A convolution of this input data S.sub.1 and a Gabor function G.sub..alpha. /3,2.omega./3 is implemented by a processing unit (21) to obtain a wavelet coefficient T.sub.g (2.sup.1,b) of the 1st stage. In the convolution of the 1st stage, the sampling interval is twice that of the 0th stage. Thenceforth, and in similar fashion, the sampling interval in processing operations of subsequent stages is doubled from one stage to the next. As a result, there is no increase in the amount of processing in each stage and a coefficient T.sub.g (2.sup.