Abstract: Provided is a method capable of shortening the time required for analysis and capable of analyzing various substances produced by microorganisms. A method for analyzing a metabolite of a microorganism according to the present invention includes: a step of supplying a mobile phase including carbon dioxide in a liquid state, a subcritical state, or a supercritical state to a container in which a microorganism cultured in a medium is contained together with the medium, to move a component of a metabolite of the microorganism present in the microorganism and the medium to the mobile phase; a step of introducing a mobile phase to which a component of the metabolite has moved into a column; and a step of performing mass spectrometry on a component of the metabolite contained in the mobile phase that has passed through the column.

Abstract: A solar cell element includes a semiconductor substrate, a passivation layer located on the semiconductor substrate, a protective layer located on the passivation layer, and a first electrode located on the protective layer. The protective layer includes at least one void located from a first lower surface of the first electrode close to the semiconductor substrate up to a first upper surface of the passivation layer close to the first lower surface.

Abstract: A solar cell element includes a semiconductor substrate, a passivation layer located on the semiconductor substrate, a protective layer located on the passivation layer, and a first electrode located on the protective layer. The protective layer includes at least one void located from a first lower surface of the first electrode close to the semiconductor substrate up to a first upper surface of the passivation layer close to the first lower surface.

Abstract: A boom damping device includes a fluid pressure cylinder configured to perform an expansion/contraction operation in conjunction with rotational movement of a boom in a roll direction of a working vehicle, a first pressure accumulator into/out of which an operating fluid flows through a first passage with the expansion/contraction operation of the fluid pressure cylinder, a second pressure accumulator into/out of which the operating fluid flows through a second passage with the expansion/contraction operation of the fluid pressure cylinder, and a shut-off switch configured to shut off the first passage and configured to shut off the second passage if at least either one of a right boom and a left boom is not at a working position expanded in a right-and-left direction of the working vehicle.

Abstract: In order to provide a solar cell device having increased reliability, the present invention is provided with: a substrate having a semiconductor region containing silicon at one primary surface side; a first electrode provided on the one primary surface and containing silver as the primary component; and a second electrode connected to the first electrode on the one primary surface and containing aluminum as the primary component. The first electrode is a solar cell device containing elemental tin.

Abstract: In order to provide a solar cell device having increased reliability, the present invention is provided with: a substrate having a semiconductor region containing silicon at one primary surface side; a first electrode provided on the one primary surface and containing silver as the primary component; and a second electrode connected to the first electrode on the one primary surface and containing aluminum as the primary component. The first electrode is a solar cell device containing elemental tin.

Abstract: A boom vibration control device that is configured to suppress vibration of a boom that is cantilever-supported on a working vehicle includes a left-roll-direction biasing unit that biases the boom in the left roll direction with respective to the working vehicle and right-roll-direction biasing unit that biases the boom in the right roll direction with respective to the working vehicle. The boom is held at the roll angle at which the biasing force of the left-roll-direction biasing unit and the biasing force of the right-roll-direction biasing unit are balanced.

Abstract: A boom raising and lowering device that is configured to raise and lower a boom includes a raising and lowering mount that is provided so as to be able to be raised and lowered with respective to the working vehicle, a roll mount that is provided on the raising and lowering mount so as to be rotatable in a roll direction and that supports the boom in a cantilever-supported manner, a first raising and lowering actuator that drives one end of the roll mount in the vertical direction with respective to the working vehicle, and a second raising and lowering actuator that drives other end of the roll mount in the vertical direction with respective to the working vehicle. The boom is driven in the vertical direction and roll direction by operating the first raising and lowering actuator and the second raising and lowering actuator.

Abstract: One of the aspects of the present invention is to provide a power semiconductor device, which includes at least one pair of power modules, each of which has a molding surface covered with molding resin and a radiating surface opposite to the molding surface. Also, the power semiconductor device includes a pair of radiating fins sandwiching the power modules such that the molding surfaces of the power modules contact each other and the radiating surfaces thereof each contact the radiating fins.

Abstract: A plurality of power semiconductor chips (power transistors or the like) are arranged, being separated from each other with a free space of a terminal board interposed therebetween. A radiating block is in contact with an insulating layer (a package and grease below the terminal board) below an arrangement region of each of the power semiconductor devices and a region between power semiconductor devices, and this increases a heat dissipation effect. With this construction, it is possible to provide a power semiconductor device and a power semiconductor module which ensure an excellent dissipation effect of heat radiated in operation of the power semiconductor chips.

Abstract: One of the aspects of the present invention is to provide a power semiconductor device, which includes at least one pair of power modules, each of which has a molding surface covered with molding resin and a radiating surface opposite to the molding surface. Also, the power semiconductor device includes a pair of radiating fins sandwiching the power modules such that the molding surfaces of the power modules contact each other and the radiating surfaces thereof each contact the radiating fins.

Abstract: A power module includes a first substrate with a power semiconductor device mounted thereon, a second substrate with a control circuit for controlling the power semiconductor device formed thereon, a smoothing capacitor electrically connected to the power semiconductor device for smoothing a voltage to be externally supplied to the power semiconductor device, and a case including a case frame and a case lid. The case has an interior in which the first substrate, the second substrate and the smoothing capacitor are disposed, and the smoothing capacitor is disposed in contact with a side surface of the case frame.

Abstract: A plurality of power semiconductor chips (power transistors or the like) are arranged, being separated from each other with a free space of a terminal board interposed therebetween. A radiating block is in contact with an insulating layer (a package and grease below the terminal board) below an arrangement region of each of the power semiconductor devices and a region between power semiconductor devices, and this increases a heat dissipation effect. With this construction, it is possible to provide a power semiconductor device and a power semiconductor module which ensure an excellent dissipation effect of heat radiated in operation of the power semiconductor chips.

Abstract: A power module includes a box-shaped smoothing capacitor (20) for smoothing a DC supply voltage to be externally applied to a power semiconductor device (5). The smoothing capacitor (20) is in contact with a side surface of a case frame (6) including a side (along which an N-terminal (8N) and a P-terminal (8P) are arranged) of a top surface of the case frame (6), and has a top surface level with the top surface of the case frame (6). An N-electrode (21N) and a P-electrode (21P) of the smoothing capacitor (20) are disposed on the top surface of the smoothing capacitor (20) and in proximity to the N-terminal (8N) and the P-terminal (8P) of a power module body portion (99), respectively. The power module can reduce a circuit inductance, is reduced in size and weight, and has good resistance to vibration.

Abstract: A semiconductor module (18) includes a ring-shaped metal frame (13) having a bottom surface for contact with a top surface of an external heat sink (11) and serving as a mounting surface. The ring-shaped metal frame (13) has a flange (20) along an inner periphery thereof for engagement with an outer peripheral part of an insulating substrate (17) at a first main surface of a ceramic plate (1). The metal frame (13) is fastened to the external heat sink (11) by screws (12) or bonded to the external heat sink (11) with an adhesive. The flange (20) of the metal frame (13) fastened or bonded to the external heat sink (11) presses the outer peripheral part of the insulating substrate (17) toward the external heat sink (11). This pressing force holds the insulating substrate (17) in pressure contact with the external heat sink (11). The semiconductor module (18) avoids the problem of a decreasing pressing force resulting from deformation to ensure a satisfactory heat dissipating property over a long period of time.

Abstract: A discrete semiconductor device is vertically sandwiched between an upper wall of a case body and a case bottom plate to be fixed inside a case. The discrete semiconductor device is fitted in the case to be positioned on a predetermined portion inside the case with high accuracy. A space defined by a side surface of the discrete semiconductor device and an inner wall of the case forms a duct for a coolant used for cooling the discrete semiconductor device. The discrete semiconductor device, except main electrodes and signal terminals, is immersed in the coolant. With this structure provided is a power semiconductor device which allows an increase in radiating efficiency of a power semiconductor element and reduction in manufacturing cost.

Abstract: A power module includes a substrate with a power semiconductor device mounted thereon, a case having an interior in which the substrate is disposed, a cooling fin having a surface on which the substrate and the case are placed, and a smoothing capacitor disposed on an opposite surface of the cooling fin from the surface on which the substrate is placed, the smoothing capacitor being electrically connected to the power semiconductor device for smoothing a voltage to be externally supplied to the power semiconductor device.

Abstract: A discrete semiconductor device (1) is vertically sandwiched between an upper wall of a case body (5) and a case bottom plate (7) to be fixed inside a case. The discrete semiconductor device (1) is fitted in the case to be positioned on a predetermined portion inside the case with high accuracy. A space defined by a side surface of the discrete semiconductor device (1) and an inner wall of the case forms a duct (9) for a coolant used for cooling the discrete semiconductor device (1). The discrete semiconductor device (1), except main electrodes (2A and 2B) and signal terminals (3), is immersed in the coolant. With this structure provided is a power semiconductor device which allows an increase in radiating efficiency of a power semiconductor element and reduction in manufacturing cost.

Abstract: P-electrode 30a and N-electrode 31a of a semiconductor device 2, and capacitors 10 in a plate-like shape or a block-like shape respectively connected to U-phase 40, V-phase 41, and W-phase 42 having a switching element 20 and a diode 21 are built in a semiconductor device 2, and a single or a plurality of capacitors 10 are respectively connected to P-electrodes 30a and N-electrodes 31a in each of the phases, whereby the smoothing capacitors are built in the semiconductor device to reduce wiring inductances, the capacitors are miniaturized, and an entire electric power converting device, i.e. inverter, is miniaturized.

Abstract: A semiconductor module (18) includes a ring-shaped metal frame (13) having a bottom surface for contact with a top surface of an external heat sink (11) and serving as a mounting surface. The ring-shaped metal frame (13) has a flange (20) along an inner periphery thereof for engagement with an outer peripheral part of an insulating substrate (17) at a first main surface of a ceramic plate (1). The metal frame (13) is fastened to the external heat sink (11) by screws (12) or bonded to the external heat sink (11) with an adhesive. The flange (20) of the metal frame (13) fastened or bonded to the external heat sink (11) presses the outer peripheral part of the insulating substrate (17) toward the external heat sink (11). This pressing force holds the insulating substrate (17) in pressure contact with the external heat sink (11). The semiconductor module (18) avoids the problem of a decreasing pressing force resulting from deformation to ensure a satisfactory heat dissipating property over a long period of time.