Abstract: An etching method includes mounting a substrate on a stage in a processing chamber, the substrate including a laminate film. The etching method includes supplying process gas to the processing chamber, the process gas including at least one of fluorocarbon gas or hydrofluorocarbon gas. The etching method includes selecting, based on a combination of material of a silicon-containing insulating layer and material of an underlying layer, a surface temperature range of at least one member of a first member or a second member in the processing chamber, the first member facing the substrate, and the second member being provided to encircle the substrate. The etching method includes adjusting a surface temperature of the one member to be within the selected surface temperature range. The etching method includes forming a plasma in the processing chamber to which the process gas is supplied, thereby etching the silicon-containing insulating layer.

Abstract: A method of etching a substrate, on which a multilayered film is formed, is provided. The multilayered film includes a silicon-containing insulating layer, an undercoat layer provided under the silicon-containing insulating layer, and a mask layer provided above the silicon-containing insulating layer. When the substrate is loaded into a process chamber, a process gas containing a fluorocarbon gas and a noble gas is supplied into the process chamber, and the multilayered film is etched by the plasma formed from the process gas. The noble gas contains a first gas having higher ionization energy than Ar gas, and momentum of an ionized particle of the first gas is less than momentum of an ionized particle of Ar gas.

Abstract: An etching method includes mounting a substrate on a stage in a processing chamber, the substrate including a laminate film. The etching method includes supplying process gas to the processing chamber, the process gas including at least one of fluorocarbon gas or hydrofluorocarbon gas. The etching method includes selecting, based on a combination of material of a silicon-containing insulating layer and material of an underlying layer, a surface temperature range of at least one member of a first member or a second member in the processing chamber, the first member facing the substrate, and the second member being provided to encircle the substrate. The etching method includes adjusting a surface temperature of the one member to be within the selected surface temperature range. The etching method includes forming a plasma in the processing chamber to which the process gas is supplied, thereby etching the silicon-containing insulating layer.

Abstract: A method of etching a substrate, on which a multilayered film is formed, is provided. The multilayered film includes a silicon-containing insulating layer, an undercoat layer provided under the silicon-containing insulating layer, and a mask layer provided above the silicon-containing insulating layer. When the substrate is loaded into a process chamber, a process gas containing a fluorocarbon gas and a noble gas is supplied into the process chamber, and the multilayered film is etched by the plasma formed from the process gas. The noble gas contains a first gas having higher ionization energy than Ar gas, and momentum of an ionized particle of the first gas is less than momentum of an ionized particle of Ar gas.

Abstract: Both a conductive layer selectivity and a mask selectivity can be achieved. A plasma processing method includes supplying a processing gas containing at least a fluorocarbon-based gas or a hydrofluorocarbon-based gas and CO into a processing vessel in which a multilayered film having at least an oxide layer, a conductive layer provided under the oxide layer and a mask layer provided on a top surface of the oxide layer is disposed; and etching the multilayered film by generating plasma within the processing vessel into which the processing gas is supplied.

Abstract: A nonvolatile semiconductor memory device according to an embodiment comprises a control unit, during a data erase, applying at least to a word line connected to a memory cell disposed most to a source line side a lower control voltage than that applied to a word line connected to a memory cell disposed most to a bit line side, of a plurality of word lines connected to at least a plurality of memory cells mutually written with data of an identical number of bits in a cell string.

Abstract: A nonvolatile semiconductor memory device according to an embodiment comprises a control unit, during a data erase, applying at least to a word line connected to a memory cell disposed most to a source line side a lower control voltage than that applied to a word line connected to a memory cell disposed most to a bit line side, of a plurality of word lines connected to at least a plurality of memory cells mutually written with data of an identical number of bits in a cell string.

Abstract: To attract a magnet in a denture to a keeper fixed at an embedded implant fixture with a complete closed magnetic circuit and without care to metal allergy, an abutment 1 for a dental magnetic attachment is made of a titanium or alloy, and has a male screw part 1a at a center part of a bottom surface to be screwed into a female screw part 3a of an implant fixture 3, a keeper attaching hole 1b at an upper surface in which a keeper 2 having a uniform thickness and the same size/area as an attracting surface of a magnet is inserted and bonded/fixed; and an engagement part 1c for a rotary tool at a center in the keeper attaching hole 1b and/or at an outer frame part around the keeper attaching hole for screwing the abutment 1 in the implant fixture 3.