Patents by Inventor Takanori Kido

Takanori Kido has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210047750
    Abstract: A seed crystal for single crystal 4H-SiC growth of the present invention is a disk-shaped seed crystal for single crystal 4H-SiC growth having a diameter of more than 150 mm and having a thickness within a range of more than or equal to 1 mm and less than or equal to 0.03 times of the diameter, in which one surface on which the single crystal 4H-SiC is grown is a mirror surface and an Ra of the other surface is more than 10 nm, and an absolute value of magnitude of waviness in a state where the seed crystal is freely deformed so that an internal stress distribution is reduced is less than or equal to 12 ?m.
    Type: Application
    Filed: December 21, 2018
    Publication date: February 18, 2021
    Applicants: SHOWA DENKO K.K., DENSO CORPORATION
    Inventors: Takanori KIDO, Masatake NAGAYA, Hidetaka TAKABA
  • Patent number: 10793758
    Abstract: An object of the present invention is to provide a two-part urethane-based adhesive composition that exhibits excellent adhesion to a base material without using a primer. A two-part urethane-based adhesive composition according to the present invention contains: a main agent that contains a urethane prepolymer having an isocyanate group; and a curing agent that contains a compound having two or more active hydrogen-containing groups in each molecule. One or both of the main agent and the curing agent contain a (meth)acrylamide compound.
    Type: Grant
    Filed: May 25, 2015
    Date of Patent: October 6, 2020
    Assignee: The Yokohama Rubber Co., Ltd.
    Inventors: Yuichi Matsuki, Megumi Abe, Takanori Kido, Hideyuki Matsuda, Masaki Yamamoto
  • Patent number: 10513644
    Abstract: A two-part curable urethane adhesive composition of the present technology contains a base agent containing a urethane prepolymer, and a curing agent containing a compound having two or more active hydrogen groups in each molecule. The curing agent contains at least one type of terpene compound selected from the group consisting of monoterpenes, hydrogenated monoterpenes, modified monoterpenes formed by modifying the monoterpenes or the hydrogenated monoterpenes with hydroxy groups, and oligomers having from 2 to 6 repeating units derived from the monoterpenes or the modified monoterpenes.
    Type: Grant
    Filed: June 12, 2015
    Date of Patent: December 24, 2019
    Inventors: Megumi Abe, Yuichi Matsuki, Takanori Kido
  • Patent number: 10453693
    Abstract: A surface machining method for a single crystal SiC substrate, including: a step of mounting a grinding plate which includes a soft pad and a hard pad sequentially attached onto a base metal having a flat surface, a step of generating an oxidation product by using the grinding plate, and a step of grinding the surface while removing the oxidation product, wherein abrasive grains made of at least one metallic oxide that is softer than single crystal SiC and has a bandgap are fixed to the surface of the hard pad.
    Type: Grant
    Filed: March 26, 2018
    Date of Patent: October 22, 2019
    Assignee: SHOWA DENKO K.K.
    Inventors: Takanori Kido, Tomohisa Kato
  • Publication number: 20180218916
    Abstract: A surface machining method for a single crystal SiC substrate, including: a step of mounting a grinding plate which includes a soft pad and a hard pad sequentially attached onto a base metal having a flat surface, a step of generating an oxidation product by using the grinding plate, and a step of grinding the surface while removing the oxidation product, wherein abrasive grains made of at least one metallic oxide that is softer than single crystal SiC and has a bandgap are fixed to the surface of the hard pad.
    Type: Application
    Filed: March 26, 2018
    Publication date: August 2, 2018
    Applicant: SHOWA DENKO K.K.
    Inventors: Takanori KIDO, Tomohisa KATO
  • Publication number: 20180163103
    Abstract: A two-part curable urethane adhesive composition of the present technology contains a base agent containing a urethane prepolymer, and a curing agent containing a compound having two or more active hydrogen groups in each molecule. The curing agent contains at least one type of terpene compound selected from the group consisting of monoterpenes, hydrogenated monoterpenes, modified monoterpenes formed by modifying the monoterpenes or the hydrogenated monoterpenes with hydroxy groups, and oligomers having from 2 to 6 repeating units derived from the monoterpenes or the modified monoterpenes.
    Type: Application
    Filed: June 12, 2015
    Publication date: June 14, 2018
    Inventors: Megumi Abe, Yuichi Matsuki, Takanori Kido
  • Patent number: 9960048
    Abstract: A surface machining method for a single crystal SiC substrate, including: a step of mounting a grinding plate which includes a soft pad and a hard pad sequentially attached onto a base metal having a flat surface, a step of generating an oxidation product by using the grinding plate, and a step of grinding the surface while removing the oxidation product, wherein abrasive grains made of at least one metallic oxide that is softer than single crystal SiC and has a bandgap are fixed to the surface of the hard pad.
    Type: Grant
    Filed: March 2, 2017
    Date of Patent: May 1, 2018
    Assignee: SHOWA DENKO K.K.
    Inventors: Takanori Kido, Tomohisa Kato
  • Publication number: 20170204311
    Abstract: An object of the present invention is to provide a two-part urethane-based adhesive composition that exhibits excellent adhesion to a base material without using a primer. A two-part urethane-based adhesive composition according to the present invention contains: a main agent that contains a urethane prepolymer having an isocyanate group; and a curing agent that contains a compound having two or more active hydrogen-containing groups in each molecule. One or both of the main agent and the curing agent contain a (meth)acrylamide compound.
    Type: Application
    Filed: May 25, 2015
    Publication date: July 20, 2017
    Inventors: Yuichi MATSUKI, Megumi ABE, Takanori KIDO, Hideyuki MATSUDA, Masaki YAMAMOTO
  • Publication number: 20170178919
    Abstract: A surface machining method for a single crystal SiC substrate, including: a step of mounting a grinding plate which includes a soft pad and a hard pad sequentially attached onto a base metal having a flat surface, a step of generating an oxidation product by using the grinding plate, and a step of grinding the surface while removing the oxidation product, wherein abrasive grains made of at least one metallic oxide that is softer than single crystal SiC and has a bandgap are fixed to the surface of the hard pad.
    Type: Application
    Filed: March 2, 2017
    Publication date: June 22, 2017
    Applicant: SHOWA DENKO K.K.
    Inventors: Takanori KIDO, Tomohisa KATO
  • Patent number: 9617432
    Abstract: A primer composition of the present technology contains an alkoxysilane compound (A), a mercaptosilane compound (B), a (meth)acrylsilane compound (C), a metal catalyst (D), an acid (E), and a solvent (F).
    Type: Grant
    Filed: August 11, 2014
    Date of Patent: April 11, 2017
    Assignee: The Yokohama Rubber Co., LTD.
    Inventors: Shigeru Yamauchi, Takanori Kido
  • Patent number: 9620374
    Abstract: A surface machining method for a single crystal SiC substrate, including: a step of mounting a grinding plate which includes a soft pad and a hard pad sequentially attached onto a base metal having a flat surface, a step of generating an oxidation product by using the grinding plate, and a step of grinding the surface while removing the oxidation product, wherein abrasive grains made of at least one metallic oxide that is softer than single crystal SiC and has a bandgap are fixed to the surface of the hard pad.
    Type: Grant
    Filed: February 13, 2014
    Date of Patent: April 11, 2017
    Assignee: SHOWA DENKO K.K.
    Inventors: Takanori Kido, Tomohisa Kato
  • Publication number: 20160185975
    Abstract: A primer composition of the present technology contains an alkoxysilane compound (A), a mercaptosilane compound (B), a (meth)acrylsilane compound (C), a metal catalyst (D), an acid (E), and a solvent (F).
    Type: Application
    Filed: August 11, 2014
    Publication date: June 30, 2016
    Inventors: Shigeru Yamauchi, Takanori Kido
  • Publication number: 20160035579
    Abstract: A surface machining method for a single crystal SiC substrate, including: a step of mounting a grinding plate which includes a soft pad and a hard pad sequentially attached onto a base metal having a flat surface, a step of generating an oxidation product by using the grinding plate, and a step of grinding the surface while removing the oxidation product, wherein abrasive grains made of at least one metallic oxide that is softer than single crystal SiC and has a bandgap are fixed to the surface of the hard pad.
    Type: Application
    Filed: February 13, 2014
    Publication date: February 4, 2016
    Applicant: SHOWA DENKO K.K.
    Inventors: Takanori KIDO, Tomohisa KATO
  • Patent number: 6844263
    Abstract: The present invention provides an LSI device polishing composition containing water, abrasive grains, an organic acid, and an oxidizing agent, and having a pH of 5.5-10.0 adjusted by an alkaline substance, the LSI device polishing composition being used for polishing a copper-containing metal wiring layer in which copper is deposited on an insulating film via barrier metal formed of Ta or TaN; and a method for producing LSI devices by use of the polishing composition. During polishing of a barrier metal such as Ta or TaN and a copper wiring layer, the rate of polishing Ta or TaN can be enhanced, to thereby prevent dishing and erosion.
    Type: Grant
    Filed: February 24, 2003
    Date of Patent: January 18, 2005
    Assignee: Showa Denko Kabushiki Kaisha
    Inventors: Yoshitomo Shimazu, Takanori Kido, Nobuo Uotani
  • Patent number: 6733553
    Abstract: The present invention can provide an abrasive composition for polishing a semiconductor device which composition contains water, microparticles of an abrasive, and a chelating agent, wherein the abrasive is cerium oxide; the microparticles of cerium oxide have an average particle size of 0.01-1.0 &mgr;m and which composition is used for suitably forming a shallow trench isolation structure in a well-controlled manner during planarization of a semiconductor device including element-isolated structure. The invention also provides a method for producing the semiconductor device by use of the abrasive composition.
    Type: Grant
    Filed: April 12, 2001
    Date of Patent: May 11, 2004
    Assignee: Showa Denko Kabushiki Kaisha
    Inventors: Takanori Kido, Fumio Tsujino
  • Publication number: 20030153188
    Abstract: The present invention provides an LSI device polishing composition containing water, abrasive grains, an organic acid, and an oxidizing agent, and having a pH of 5.5-10.0 adjusted by an alkaline substance, the LSI device polishing composition being used for polishing a copper-containing metal wiring layer in which copper is deposited on an insulating film via barrier metal formed of Ta or TaN; and a method for producing LSI devices by use of the polishing composition. During polishing of a barrier metal such as Ta or TaN and a copper wiring layer, the rate of polishing Ta or TaN can be enhanced, to thereby prevent dishing and erosion.
    Type: Application
    Filed: February 24, 2003
    Publication date: August 14, 2003
    Applicant: SHOWA DENKO K.K.
    Inventors: Yoshitomo Shimazu, Takanori Kido, Nobuo Uotani
  • Patent number: 6547843
    Abstract: The present invention provides an LSI device polishing composition containing water, abrasive grains, an organic acid, and an oxidizing agent, and having a pH of 5.5-10.0 adjusted by an alkaline substance, the LSI device polishing composition being used for polishing a copper-containing metal wiring layer in which copper is deposited on an insulating film via barrier metal formed of Ta or TaN; and a method for producing LSI devices by use of the polishing composition. During polishing of a barrier metal such as Ta or TaN and a copper wiring layer, the rate of polishing Ta or TaN can be enhanced, to thereby prevent dishing and erosion.
    Type: Grant
    Filed: July 2, 2001
    Date of Patent: April 15, 2003
    Assignee: Showa Denko K.K.
    Inventors: Yoshitomo Shimazu, Takanori Kido, Nobuo Uotani
  • Patent number: 6478836
    Abstract: A cerium oxide slurry for polishing comprising cerium oxide dispersed in water, wherein the slurry has a conductivity of about 30 c &mgr;S/cm or less when the cerium oxide concentration in the slurry is c wt. %. In order to adjust the conductivity to about 30 c &mgr;S/cm or less, cerium oxide is washed with deionized water.
    Type: Grant
    Filed: May 26, 2000
    Date of Patent: November 12, 2002
    Assignee: Showa Denko K.K.
    Inventors: Takanori Kido, Masayuki Sanbayashi, Fumio Tsujino, Kagetaka Ichikawa
  • Patent number: 6436835
    Abstract: An abrasive composition for polishing a semiconductor device, comprising cerium oxide, a water-soluble organic compound having at least one group of —COOH, —COOMx (wherein Mx is an atom or a functional group capable of substituting a H atom to form a salt), —SO3H or —SO3MY (wherein MY is an atom or a functional group capable of substituting a H atom to form a salt), and water a process for forming shallow trench isolations using this abrasive composition.
    Type: Grant
    Filed: August 24, 2000
    Date of Patent: August 20, 2002
    Assignee: Showa Denko K.K.
    Inventors: Takanori Kido, Kagetaka Ichikawa
  • Patent number: 6410444
    Abstract: An abrasive composition for polishing a semiconductor device, comprising cerium oxide, a water-soluble organic compound having at least one group of —COOH, —COOMX (wherein MX is an atom or a functional group capable of substituting a H atom to form a salt), —SO3H or —SO3MY (wherein MY is an atom or a functional group capable of substituting a H atom to form a salt), and water a process for forming shallow trench isolations using this abrasive composition.
    Type: Grant
    Filed: September 17, 2001
    Date of Patent: June 25, 2002
    Assignee: Showa Denko K.K.
    Inventors: Takanori Kido, Kagetaka Ichikawa