Patents by Inventor Takanori Murata

Takanori Murata has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240088778
    Abstract: A controller in a power conversion unit increases or decreases, based on a detected voltage value of a first flying capacitor, a value of a gate voltage to be applied to a gate terminal of a target switch to be controlled selectively from first to fourth switches in a first capacitor circuit to cause conduction between a drain terminal and a source terminal of the target switch, or changes a gradient of the gate voltage value. The controller increases or decreases, based on a detected voltage value of the second flying capacitor, a value of a gate voltage to be applied to a gate terminal of a target switch to be controlled selectively from fifth to eighth switches in a second capacitor circuit to cause conduction between a drain terminal and a source terminal of the target switch, or changes a gradient of the gate voltage value.
    Type: Application
    Filed: December 20, 2021
    Publication date: March 14, 2024
    Inventors: Takayoshi TAWARAGI, Takanori ISHII, Aya MURATA
  • Publication number: 20190284685
    Abstract: Provided are a thin film formation apparatus, a sputtering cathode, and a method of forming thin film, capable of forming a multilayer optical film at a high film deposition rate on a large-sized substrate. The thin film formation apparatus forms a thin film of a metal compound on a substrate in a vacuum chamber by sputtering. The vacuum chamber is provided in its inside with targets composed of metal or a conductive metal compound, and an active species source for generating an active species of a reactive gas. The active species source is provided with gas sources for supplying the reactive gas, and an energy source for supplying energy into the vacuum chamber to excite the reactive gas to a plasma state. The energy source is provided between itself and the vacuum chamber with a dielectric window for supplying the energy into the vacuum chamber.
    Type: Application
    Filed: May 23, 2019
    Publication date: September 19, 2019
    Inventors: Mitsuhiro MIYAUCHI, Takanori MURATA, Takuya SUGAWARA, Ichiro SHIONO, Yousong JIANG, Tatsuya HAYASHI, Ekishu NAGAE
  • Publication number: 20150284842
    Abstract: Provided are a thin film formation apparatus, a sputtering cathode, and a method of forming thin film, capable of forming a multilayer optical film at a high film deposition rate on a large-sized substrate. The thin film formation apparatus forms a thin film of a metal compound on a substrate in a vacuum chamber by sputtering. The vacuum chamber is provided in its inside with targets composed of metal or a conductive metal compound, and an active species source for generating an active species of a reactive gas. The active species source is provided with gas sources for supplying the reactive gas, and an energy source for supplying energy into the vacuum chamber to excite the reactive gas to a plasma state. The energy source is provided between itself and the vacuum chamber with a dielectric window for supplying the energy into the vacuum chamber.
    Type: Application
    Filed: October 23, 2012
    Publication date: October 8, 2015
    Inventors: Mitsuhiro Miyauchi, Takanori Murata, Takuya Sugawara, Ichiro Shiono, Yousong Jiang, Tatsuya Hayashi, Ekishu Nagae
  • Patent number: 8826856
    Abstract: An optical thin-film vapor deposition apparatus and method are capable of producing an optical thin-film by vapor depositing a vapor deposition substance onto substrates (14) within a vacuum vessel (10). A dome shaped holder (12) is disposed within the vacuum vessel (10) and holds the substrates (14). A drive rotates the dome shaped holder (12). A vapor depositing source (34) is disposed oppositely to the substrates (14). An ion source (38) irradiates ions to the substrates (14). A neutralizer (40) irradiates electrons to the substrates (14). The ion source (38) is disposed at an angle between an axis, along which ions are irradiated from the ion source (38), and a line perpendicular to a surface of each of the substrates (14). The angle is between 8° inclusive and 40° inclusive. A ratio of a distance in a vertical direction between (i) a center of rotational axis of the dome shaped holder (12), and (ii) a center of the ion source (38), relative to a diameter of the dome shaped holder (12), is between 0.
    Type: Grant
    Filed: August 17, 2009
    Date of Patent: September 9, 2014
    Assignee: Shincron Co., Ltd.
    Inventors: Ekishu Nagae, Yousong Jiang, Ichiro Shiono, Tadayuki Shimizu, Tatsuya Hayashi, Makoto Furukawa, Takanori Murata
  • Publication number: 20110262656
    Abstract: A method of vapor depositing a vapor deposition substance onto substrates within a vacuum vessel includes holding the substrates with a dome shaped holder disposed within the vacuum vessel, rotating the dome shaped holder, vapor depositing a substance from a vapor deposition source disposed oppositely to the substrates, supplying ions from an ion source to the substrates, and supplying neutralizing electrons from a neutralizer to the substrates.
    Type: Application
    Filed: July 8, 2011
    Publication date: October 27, 2011
    Inventors: Ekishu Nagae, Yousong Jiang, Ichiro Shiono, Tadayuki Shimizu, Tatsuya Hayashi, Makoto Furukawa, Takanori Murata
  • Publication number: 20110151135
    Abstract: An optical thin-film vapor deposition apparatus and method are capable of producing an optical thin-film by vapor depositing a vapor deposition substance onto substrates (14) within a vacuum vessel (10). A dome shaped holder (12) is disposed within the vacuum vessel (10) and holds the substrates (14). A drive rotates the dome shaped holder (12). A vapor depositing source (34) is disposed oppositely to the substrates (14). An ion source (38) irradiates ions to the substrates (14). A neutralizer (40) irradiates electrons to the substrates (14). The ion source (38) is disposed at an angle between an axis, along which ions are irradiated from the ion source (38), and a line perpendicular to a surface of each of the substrates (14). The angle is between 8° inclusive and 40° inclusive. A ratio of a distance in a vertical direction between (i) a center of rotational axis of the dome shaped holder (12), and (ii) a center of the ion source (38), relative to a diameter of the dome shaped holder (12), is between 0.
    Type: Application
    Filed: August 17, 2009
    Publication date: June 23, 2011
    Inventors: Ekishu Nagae, Yousong Jiang, Ichiro Shiono, Tadayuki Shimizu, Tatsuya Hayashi, Makoto Furukawa, Takanori Murata
  • Publication number: 20110111581
    Abstract: [Object] To provide a deposition apparatus 1 capable of suppressing a temporal change in film formation conditions. [Solution] In the deposition apparatus 1 including a substrate holder 12 supported in a vacuum chamber 10 grounded on the earth, a substrate 14 held by the substrate holder 12, deposition sources 34, 36 placed distant from the substrate 14 so as to face the substrate, an ion gun 38 for irradiating ions to the substrate 14, and a neutralizer 40 for irradiating electrons to the substrate 14, an irradiated ion guide member 50 and an irradiated electron guide member 52 are respectively attached to the ion gun 38 and the neutralizer 40.
    Type: Application
    Filed: June 16, 2009
    Publication date: May 12, 2011
    Applicant: SHINCRON CO., LTD.
    Inventors: Ichiro Shiono, Yousong Jiang, Hiromitsu Honda, Takanori Murata
  • Publication number: 20110097511
    Abstract: [Object] To provide a deposition apparatus 1 capable of suppressing a temporal change in film formation conditions. [Solution] In the deposition apparatus 1 including a substrate holder 12 supported in a vacuum chamber 10 grounded on the earth, a substrate 14 held by the substrate holder 12, deposition sources 34, 36 placed distant from the substrate 14 so as to face the substrate, an ion gun 38 for irradiating ions to the substrate 14, and a neutralizer 40 for irradiating electrons to the substrate 14, the vacuum chamber 10 is provided with an inner wall 30 electrically floating, and the neutralizer 40 is arranged on the inner side surface side of the vacuum chamber 10 so as to be distant from the ion gun 38.
    Type: Application
    Filed: June 16, 2009
    Publication date: April 28, 2011
    Applicant: SHINCRON CO., LTD.
    Inventors: Ichiro Shiono, Yousong Jiang, Ekishu Nagae, Hiromitsu Honda, Takanori Murata
  • Publication number: 20060266291
    Abstract: A thin film deposition apparatus comprising gas introducer for introducing a reactive gas into the vacuum container, and plasma generator for generating a plasma of the reactive gas within the vacuum container. An insulator is deposited on the inner wall surface of the vacuum container. The gas introducer introduces a reactive gas and an inert gas into a region where a plasma is generated by the plasma generator.
    Type: Application
    Filed: May 31, 2004
    Publication date: November 30, 2006
    Inventors: Yizhou Song, Takeshi Sakurai, Takanori Murata
  • Publication number: 20060124455
    Abstract: A thin film deposition apparatus of the present invention includes a vacuum container for maintaining a vacuum therein, gas introducer for introducing a reactive gas into the vacuum container, and plasma generator for generating a plasma of the reactive gas within the vacuum container. A wall surface within the vacuum container is coated with pyrolytic boron nitride. The plasma generator comprises a dielectric wall provided on an outer wall of the vacuum container, the first antenna having a spiral shape, the second antenna having a spiral shape, and the conductor wire for connecting the first and second antennas to an RF power supply, antenna fixing mechanism and position adjustor for antennas.
    Type: Application
    Filed: June 2, 2003
    Publication date: June 15, 2006
    Inventors: Yizhou Song, Takeshi Sakurai, Takanori Murata
  • Patent number: 6700998
    Abstract: An iris registration unit being capable of preventing a double registration of a same person is provided. An iris degree of similarity judging device, when iris data to be newly registered is inputted into an iris data base, is adapted to judge similarity to all registered iris data stored in the iris data base. Only when the result of the judgement shows that no registered iris data having similarity exceeding a degree of predetermined similarity exist, the inputted iris data is allowed to be registered in the iris data base.
    Type: Grant
    Filed: March 8, 2000
    Date of Patent: March 2, 2004
    Assignee: Oki Electric Industry Co, Ltd.
    Inventor: Takanori Murata