Abstract: A display device and a production method for the display device having a pixel region formed by arraying a plurality of pixels each having an organic layer held by a lower electrode and an upper electrode on a substrate are provided. The production method for the display device of the invention includes, in one embodiment, a first step of forming a first insulating film on the substrate, a second step of forming a plurality of such lower electrodes each corresponding to each of the pixels on the first insulating film in the pixel region, forming a conductive film on the first insulating film in a peripheral region outside the pixel region, and forming a hole, in the conductive film, which extends to the first insulating film, and a third step of performing a bake treatment on the substrate on which the lower electrode and the conductive film are provided.

Abstract: A top-emitting display unit is fabricated by the following steps: A lower electrode is formed on a substrate. An organic layer including a luminescent sublayer is formed on the lower electrode. Furthermore, an upper electrode containing lithium is formed by a sputtering process into a thickness of 7 nm to 21 nm. The upper electrode functions as a cathode. The lithium content in the upper electrode is in the range of 0.3 to 1.9 percent by weight. In the sputtering process, the upper electrode is preferably formed at a deposition rate of 50 nm/min or less.

Abstract: A top-emitting display unit is fabricated by the following steps: A lower electrode is formed on a substrate. An organic layer including a luminescent sublayer is formed on the lower electrode. Furthermore, an upper electrode containing lithium is formed by a sputtering process into a thickness of 7 nm to 21 nm. The upper electrode functions as a cathode. The lithium content in the upper electrode is in the range of 0.3 to 1.9 percent by weight. In the sputtering process, the upper electrode is preferably formed at a deposition rate of 50 nm/min or less.

Abstract: A method of manufacturing individual semiconductor devices by forming island sections 26 on the surface of a common substrate 21, forming electrodes 27 and 28 one on either side of each island section 26, die bonding a semiconductor chip 29 to each island section 26, and wire bonding the electrodes 27 and 28 to the semiconductor chip 29. A single common cover 36 is fixed over the entire surface of the common substrate 21 to form a hermetically sealed hollow space over each chip mounting section 41. The cover 36 and substrate 21 are separated at each mounting section 41 to form individual semiconductor devices.