Abstract: A wafer placement apparatus includes a disc-shaped ceramic plate having an upper surface as a wafer placement surface and in which an electrode is embedded; a disc-shaped cooling plate provided on a lower surface, opposite the wafer placement surface, of the ceramic plate; and a resin adhesive-sheet layer with which a bonding surface as the lower surface of the ceramic plate and a bonding surface as an upper surface of the cooling plate are bonded to each other, wherein at least one of the bonding surface of the ceramic plate and the bonding surface of the cooling plate has a surface roughness Ra that is higher in an outer part of the bonding surface than in an inner part of the bonding surface.

Abstract: A wafer placement apparatus includes a disc-shaped ceramic plate having an upper surface as a wafer placement surface and in which an electrode is embedded; a disc-shaped cooling plate provided on a lower surface, opposite the wafer placement surface, of the ceramic plate; and a resin adhesive-sheet layer with which a bonding surface as the lower surface of the ceramic plate and a bonding surface as an upper surface of the cooling plate are bonded to each other, wherein at least one of the bonding surface of the ceramic plate and the bonding surface of the cooling plate has a surface roughness Ra that is higher in an outer part of the bonding surface than in an inner part of the bonding surface.

Abstract: A compound semiconductor light-emitting element characterized by high transmittance of an electrically conductive film, low contact resistance and low sheet resistance of electrically conductive film is manufactured. The manufacturing method for a compound semiconductor light-emitting element of the present invention includes the steps of: forming a semiconductor layer formed of a group III nitride semiconductor, including a light-emitting layer on a substrate; forming an electrically conductive film on the side of the semiconductor layer opposite to the side contacting the substrate; conducting first annealing on the electrically conductive film in an atmosphere containing oxygen; conducting second annealing on the electrically conductive film in an atmosphere not containing oxygen; and exposing the electrically conductive film to atmospheric air between the step of conducting first annealing and the step of conducting second annealing.

Abstract: It is intended to provide a production method that enables at least one of improvement in transparency, reduction in sheet resistance, homogenization in planar distribution of sheet resistance, and reduction in contact resistance related to a contact layer regarding a transparent conductive oxide film included in a compound semiconductor light-emitting device. A method for producing a compound semiconductor light-emitting device includes depositing on a substrate a compound semiconductor stacked-layer body including a light-emitting layer, depositing a transparent conductive oxide film on the compound semiconductor stacked-layer body, and annealing the transparent conductive oxide film and thereafter cooling the same in a vacuum atmosphere.

Abstract: A semiconductor light-emitting device includes a substrate, an n-type semiconductor layer located above the substrate, a semiconductor light-emitting layer located on the n-type semiconductor layer, a p-type semiconductor layer located on the semiconductor light-emitting layer. The semiconductor light-emitting device also includes an insulation film located on part of the p-type semiconductor layer in an unexposed section, a first transparent conductive film located on substantially the whole of the p-type semiconductor layer where the insulation film is not located in the unexposed section, and a second transparent conductive film located on the insulation film and the first transparent conductive film.

Abstract: A film-forming device includes: a shield part placed so as to surround the sides of the target; a rod-shaped magnetic field generation unit for generating a magnetic field, the magnetic field generation unit being placed toward the back surface of the target; and a drive unit for reciprocatingly driving the magnetic field generation unit in a linear manner along a drive direction, which is a direction perpendicular to the length direction of the magnetic field generation unit, in a horizontal plane, which is a plane perpendicular to the front/back direction of the target. When the magnetic field generation unit is located at the end of the range within which it is driven by the drive unit, the distance in the drive direction between the magnetic field generation unit and the projection when the shield part is projected perpendicularly to the horizontal plane is 10 mm or more.

Abstract: A compound semiconductor light-emitting element characterized by high transmittance of an electrically conductive film, low contact resistance and low sheet resistance of electrically conductive film is manufactured. The manufacturing method for a compound semiconductor light-emitting element of the present invention includes the steps of: forming a semiconductor layer formed of a group III nitride semiconductor, including a light-emitting layer on a substrate; forming an electrically conductive film on the side of the semiconductor layer opposite to the side contacting the substrate; conducting first annealing on the electrically conductive film in an atmosphere containing oxygen; conducting second annealing on the electrically conductive film in an atmosphere not containing oxygen; and exposing the electrically conductive film to atmospheric air between the step of conducting first annealing and the step of conducting second annealing.

Abstract: It is intended to provide a production method that enables at least one of improvement in transparency, reduction in sheet resistance, homogenization in planar distribution of sheet resistance, and reduction in contact resistance related to a contact layer regarding a transparent conductive oxide film included in a compound semiconductor light-emitting device. A method for producing a compound semiconductor light-emitting device includes depositing on a substrate a compound semiconductor stacked-layer body including a light-emitting layer, depositing a transparent conductive oxide film on the compound semiconductor stacked-layer body, and annealing the transparent conductive oxide film and thereafter cooling the same in a vacuum atmosphere.

Abstract: A semiconductor light-emitting device includes a substrate, an n-type semiconductor layer located above the substrate, a semiconductor light-emitting layer located on the n-type semiconductor layer, a p-type semiconductor layer located on the semiconductor light-emitting layer. The semiconductor light-emitting device also includes an insulation film located on part of the p-type semiconductor layer in an unexposed section, a first transparent conductive film located on substantially the whole of the p-type semiconductor layer where the insulation film is not located in the unexposed section, and a second transparent conductive film located on the insulation film and the first transparent conductive film.

Abstract: It is an object of the present invention to provide a method for forming an interlayer insulation film suppressing the occurrence of voids in the interlayer insulation film. A method for forming an interlayer insulation film of the present invention, comprising the steps of: (1) forming an etching stopper film of a silicon nitride film on an entire surface including a step part on a semiconductor substrate having the step part with an aspect ratio of ?3; (2) forming an interlayer insulation film of an impurity-doped silicate film on the silicon nitride film; and (3) performing reflow of the interlayer insulation film by a heat treatment, wherein the formation of the silicon nitride film is controlled such that the N—H bond density of the silicon nitride film is 1.0×1022 pieces/cm3 or less.

Abstract: It is an object of the present invention to provide a method for forming an interlayer insulation film suppressing the occurrence of voids in the interlayer insulation film. A method for forming an interlayer insulation film of the present invention, comprising the steps of: (1) forming an etching stopper film of a silicon nitride film on an entire surface including a step part on a semiconductor substrate having the step part with an aspect ratio of ?3; (2) forming an interlayer insulation film of an impurity-doped silicate film on the silicon nitride film; and (3) performing reflow of the interlayer insulation film by a heat treatment, wherein the formation of the silicon nitride film is controlled such that the N—H bond density of the silicon nitride film is 1.0×1022 pieces/cm3 or less.

Abstract: It is an object of the present invention to provide a method for manufacturing a semiconductor device suppressing the occurrence of voids in an insulating film. A method for manufacturing a semiconductor device according to the present invention comprises the steps of: (1) forming an insulating film 11 composed of a thin silicon nitride film on a semiconductor substrate 1 having at least a necessary element and a recessed part 6 so as to cover the recessed part 6; (2) modifying the surface of the insulating film 11; and (3) forming a BPSG film 15 as an interlayer insulation film on the insulating film. The occurrence of voids in the interlayer insulation film 15 is suppressed by the process for modifying the surface.