Abstract: An electron beam apparatus is provided having an electron emitting device which has a simple configuration, exhibits high electron emission efficiency, operates stably, and in which emitted electrons are effectively converged. The electron beam apparatus includes: an insulator having a notch on its surface; a gate positioned on the surface of the insulator; at least one cathode having a protruding portion protruding from an edge of the notch toward the gate, and positioned on the surface of the insulator so that the protruding portion is opposed to the gate; and an anode arranged to be opposed to the protruding portion via the gate, wherein the gate is formed on the surface of the insulator so that at least a part of a region opposed to the cathode is projected outward and recessed portions are provided in which ends of the gate are recessed and interpose the projected region.

Abstract: Deformation of a gate by Coulomb force generated when operating an electron-emitting device is inhibited by appropriately maintaining relationship between film thickness h of the gate and distance L from an outer surface of an insulating member to an inner surface of a concave portion. According to this, in an electron beam apparatus provided with a laminate-type electron-emitting device, the deformation of the gate is prevented to reduce variation in electron emission characteristics, thereby preventing the element from being broken.

Abstract: In an electron beam apparatus including an electron emission element and an anode, the electron emission element includes a gate 5 and a cathode 6 having a projection portion. The gate 5 and the cathode 6 are located in a surface of an insulating member 3 including a recess 7. The projection portion of the cathode 6 has a height distribution, and an average value dav (m) of a shortest distance between the gate 5 and the projection portion of the cathode 6 and a difference h (m) between the average value dav and a shortest distance dmin (m) from the gate 5 to a maximum convex portion of the projection portion of the cathode 6 satisfy a relationship of h/dav<0.39.

Abstract: Provided is an electron-emitting device including an insulating member and a gate stacked on a substrate. A cathode is disposed on a side surface of the insulating member. The cathode has a plurality of protrusions provided along a corner of the insulating member. The gate has a plurality of protrusions extending toward the cathode.

Abstract: In an electron beam apparatus including a lamination electron emitting device, it is an object to enhance electron emission efficiency by controlling an electron emission point at which electrons are emitted. In the device, an insulating member and a gate are formed on a substrate, a recess portion is formed in the insulating member, a protruding portion protruding from an edge of the recess portion toward the gate is provided at an end in opposition to the gate, of a cathode 6 arranged on a side surface of the insulating member, and convex portions at a distance of not less than 1 nm and not more than 5 nm from the gate in a width direction of the protruding portion are included in a density of 10% or less in a width direction of the cathode.

Abstract: Deformation of a gate by Coulomb force generated when operating an electron-emitting device is inhibited by appropriately maintaining relationship between film thickness h of the gate and distance L from an outer surface of an insulating member to an inner surface of a concave portion. According to this, in an electron beam apparatus provided with a laminate-type electron-emitting device, the deformation of the gate is prevented to reduce variation in electron emission characteristics, thereby preventing the element from being broken.

Abstract: In an electron beam apparatus including an electron emission element and an anode, the electron emission element includes a gate 5 and a cathode 6 having a projection portion. The gate 5 and the cathode 6 are located in a surface of an insulating member 3 including a recess 7. The projection portion of the cathode 6 has a height distribution, and an average value day (m) of a shortest distance between the gate 5 and the projection portion of the cathode 6 and a difference h (m) between the average value day and a shortest distance dmin (m) from the gate 5 to a maximum convex portion of the projection portion of the cathode 6 satisfy a relationship of h/day<0.39.

Abstract: An electron beam apparatus is provided having an electron emitting device which has a simple configuration, exhibits high electron emission efficiency, operates stably, and in which emitted electrons are effectively converged. The electron beam apparatus includes: an insulator having a notch on its surface; a gate positioned on the surface of the insulator; at least one cathode having a protruding portion protruding from an edge of the notch toward the gate, and positioned on the surface of the insulator so that the protruding portion is opposed to the gate; and an anode arranged to be opposed to the protruding portion via the gate, wherein the gate is formed on the surface of the insulator so that at least a part of a region opposed to the cathode is projected outward and recessed portions are provided in which ends of the gate are recessed and interpose the projected region.