Abstract: The present disclosure has an object of providing a silicon carbide semiconductor device with high productivity which prevents characteristic degradation occurring when a large current is applied to a body diode. A structure including a SiC substrate, a buffer layer, and a drift layer is classified into an active region through which a current flows with application of a voltage to the SiC-MOSFET, and a breakdown voltage support region around a periphery of the active region in a plan view. The active region is classified into a first active region in a center portion, and a second active region between the first active region and the breakdown voltage support region in the plan view. Lifetimes of minority carriers in the second active region and the breakdown voltage support region are shorter than that in the first active region.

Abstract: In a phase adjustment circuit, a binary circuit is configured to output a binary signal on the basis of an edge of a video signal. A phase-delayed clock signal generation circuit is configured to generate a phase-delayed clock signal having a later phase than a phase of a clock signal by a first delay amount. A delay time control circuit is configured to cause a phase of the binary signal and the phase of the phase-delayed clock signal to match each other by adjusting the first delay amount. A sampling signal generation circuit is configured to generate a sampling signal having a later phase than the phase of the clock signal by a second delay amount. The second delay amount is in accordance with both a phase shift amount, which is based on the clock signal, and the first delay amount.

Abstract: The present invention is a method for removing a biofilm containing a metal and formed in a water system, wherein the biofilm is brought into contact with (a) a compound having a hydroxyl radical generation ability and (b) a reducing agent.

Abstract: The present invention is a method for removing a biofilm formed in a water system comprising, exposing the biofilm to a liquid having a hydroxyl radical generation ability, obtained by a predetermined measurement method, of 0.15 or more.

Abstract: In a present webbing retractor, when a stopper is pushed and moved by a conical portion of a moving member, the stopper abuts a moving member main body of the moving member between a rotating member and an axial direction distal end of a cylinder, and moreover, is moved toward a side of a portion of engagement of the moving member main body with first teeth and second teeth of the rotating member, while deforming the moving member main body. Due thereto, expansion, toward a side in a direction orthogonal to an axis, of the moving member main body can be suppressed.

Abstract: A thread shape measuring apparatus includes: a first illuminating unit that has an optical axis orthogonal to a cross section including a thread axis, and illuminates the thread portion; a second illuminating unit that has an optical axis that forms an angle ? larger than a lead angle ? of the thread portion with respect to the direction orthogonal to the cross section and illuminates the thread portion; an image-capturing unit that has a visual axis parallel to the optical axis of the first illuminating unit, includes a telecentric lens, has a focusing position matching the cross section, and detects, out of the light emitted from the first illuminating unit or the second illuminating unit, light that has not been blocked by the thread portion to capture an image of the detected light; and an operation unit that calculates a shape of the thread portion based on the captured image.

Abstract: An endoscope includes: an imager; a transmission path configured to connect a controller and the imager with each other; a superimposed signal generating circuit configured to generate, as a superimposed signal, a signal obtained by associating High and Low of a pulsed data signal with a change in a pulse width of a pulsed reference clock signal; a parallel-serial converter circuit configured to perform parallel-serial conversion on the imaging signal; a PLL circuit configured to generate a multiplied clock signal; a restoring circuit configured to restore, based on the superimposed signal and the multiplied clock signal, the reference clock signal and the data signal contained in the superimposed signal; and a timing generating circuit configured to generate, based on the reference clock signal and the data signal, a drive signal for driving the imager.

Abstract: It is an object of the present invention to provide a silicon carbide substrate having a low defect density that does not contaminate a process device and a silicon carbide semiconductor device including the silicon carbide substrate. A silicon carbide substrate according to the present invention is a silicon carbide substrate including: a substrate inner portion; and a substrate outer portion surrounding the substrate inner portion, wherein non-dopant metal impurity concentration of the substrate inner portion is 1×1016 cm?3 or more, and a region of the substrate outer portion at least on a surface side thereof is a substrate surface region in which the non-dopant metal impurity concentration is less than 1×1016 cm?3.

Abstract: In an imaging system, an image transmission circuit is configured to output image data to a signal line in a first mode. A signal reception circuit is configured to receive a clock control signal for adjusting a frequency of a camera clock from an image reception unit in a second mode. A signal output circuit is configured to output a first electric potential and the clock control signal to the signal line. The first electric potential corresponds to a signal level that is not included in a range of a signal level of the image data output to the signal line. A communication control circuit is configured to switch communication modes from the first mode to the second mode when the communication control circuit detects the first electric potential in the first mode.

Abstract: A thread shape measuring apparatus includes: a first illuminating unit that has an optical axis orthogonal to a cross section including a thread axis, and illuminates the thread portion; a second illuminating unit that has an optical axis that forms an angle ? larger than a lead angle ? of the thread portion with respect to the direction orthogonal to the cross section and illuminates the thread portion; an image-capturing unit that has a visual axis parallel to the optical axis of the first illuminating unit, includes a telecentric lens, has a focusing position matching the cross section, and detects, out of the light emitted from the first illuminating unit or the second illuminating unit, light that has not been blocked by the thread portion to capture an image of the detected light; and an operation unit that calculates a shape of the thread portion based on the captured image.

Abstract: A seamless steel pipe heat-treatment-finishing-treatment continuous facility includes: a heat treatment apparatus; a steel pipe inspection apparatus which performs a test for a surface defect and/or an inner defect of the seamless steel pipe, the steel pipe inspection apparatus being disposed downstream of the heat treatment apparatus; a main transfer mechanism which forms a main transfer path MT for transferring the seamless steel pipe, discharged from the heat treatment apparatus, to the steel pipe inspection apparatus disposed downstream of the heat treatment apparatus; and a first forced steel pipe-temperature reduction apparatus which forcibly reduces a temperature of the seamless steel pipe on the main transfer path MT, the first forced steel pipe-temperature reduction apparatus being disposed on the main transfer path MT at a position downstream of the heat treatment apparatus and upstream of the steel pipe inspection apparatus.

Abstract: In a present webbing retractor, when a stopper is pushed and moved by a conical portion of a moving member, the stopper abuts a moving member main body of the moving member between a rotating member and an axial direction distal end of a cylinder, and moreover, is moved toward a side of a portion of engagement of the moving member main body with first teeth and second teeth of the rotating member, while deforming the moving member main body. Due thereto, expansion, toward a side in a direction orthogonal to an axis, of the moving member main body can be suppressed.

Abstract: An epitaxial substrate includes a single-crystal substrate of silicon carbide, and an epitaxial layer of silicon carbide disposed on the single-crystal substrate. The epitaxial layer includes a first epitaxial layer disposed on the single-crystal substrate, a second epitaxial layer disposed on the first epitaxial layer, and a third epitaxial layer disposed on the second epitaxial layer. The first epitaxial layer has a basal-plane-dislocation conversion rate of less than 95%. The second epitaxial layer has a basal-plane-dislocation conversion rate of more than 98%.

Abstract: A semiconductor device includes an n-type drift layer formed on a semiconductor substrate having an off-angle, plurality of p-type pillar regions formed in the drift layer, and a surface electrode formed on the drift layer including the plurality of p-type pillar regions. A plurality of withstand voltage holding structures which are p-type semiconductor regions are formed in a surface layer of the drift layer including the plurality of p-type pillar regions to surround an active region. Each of the plurality of p-type pillar regions has a linear shape extending in a direction of the off-angle of the semiconductor substrate. Each of the plurality of withstand voltage holding structures has a frame-like shape including sides extending in parallel with the plurality of p-type pillar regions and sides perpendicular to the plurality of p-type pillar regions in a planar view.

Abstract: An outer ring includes an outer ring small-diameter part extending toward one axial side with respect to the outer ring raceway, a radial wall part extending from an axial end portion of the outer ring small-diameter part toward an inner diameter-side, and a folded-back part extending from a radially inner end portion of the radial wall part toward the other axial side. The folded-back part radially overlaps the inner ring small-diameter part with a radial gap therebetween. The radial gap of an inner diameter-side entry formed by an axial end of the folded-back part and the inner peripheral surface of the inner ring small-diameter part is smaller than the radial gap of an inner diameter-side exit formed by an axial end of the inner ring small-diameter part and an outer peripheral surface of the folded-back part.

Abstract: An endoscope includes: an imager; a transmission path configured to connect a controller and the imager with each other; a superimposed signal generating circuit configured to generate, as a superimposed signal, a signal obtained by associating High and Low of a pulsed data signal with a change in a pulse width of a pulsed reference clock signal; a parallel-serial converter circuit configured to perform parallel-serial conversion on the imaging signal; a PLL circuit configured to generate a multiplied clock signal; a restoring circuit configured to restore, based on the superimposed signal and the multiplied clock signal, the reference clock signal and the data signal contained in the superimposed signal; and a timing generating circuit configured to generate, based on the reference clock signal and the data signal, a drive signal for driving the imager.

Abstract: An imaging element includes: a pixel chip where a pixel unit and a vertical selecting unit are arranged, the pixel unit including plural pixels that are arranged in a two-dimensional matrix, the pixels being configured to generate and output imaging signals; a transmission chip where at least a power source unit and a transmission unit are arranged; plural capacitative chips, each capacitative chip having capacitance functioning as a bypass condenser for a power source in the power source unit; and plural connecting portions configured to electrically connect the pixel chip, the transmission chip, and the capacitative chip respectively to another chip. The transmission chip is layered and connected at a back surface side of the pixel chip. The capacitative chips are layered and connected at a back surface side of the transmission chip. The connecting portions are arranged so as to overlap one another.

Abstract: It is an object of the present invention to provide a silicon carbide substrate having a low defect density that does not contaminate a process device and a silicon carbide semiconductor device including the silicon carbide substrate. A silicon carbide substrate according to the present invention is a silicon carbide substrate including: a substrate inner portion; and a substrate outer portion surrounding the substrate inner portion, wherein non-dopant metal impurity concentration of the substrate inner portion is 1×1016 cm?3 or more, and a region of the substrate outer portion at least on a surface side thereof is a substrate surface region in which the non-dopant metal impurity concentration is less than 1×1016 cm?3.

Abstract: An imaging device includes: a first chip including a light receiving unit, and a read circuit; a second chip including a timing control circuit, an A/D conversion circuit, and a cable transmission circuit; and a connection unit configured to connect the first and the second chips. The read circuit includes a column read circuit and a horizontal selection circuit, and a vertical selection circuit. The connection unit of the first chip is provided in a first area along a side of the rectangular light receiving unit, and in a second area adjacent to the column read circuit, the horizontal selection circuit, and the vertical selection circuit. The connection unit of the second chip is provided in a third area around the timing control circuit, the A/D conversion circuit, and the cable transmission circuit and in a fourth area adjacent to the timing control circuit and the A/D conversion circuit.

Abstract: An image sensor includes: pixels; first transfer lines configured to transfer imaging signals of shared pixels that are present in a plurality of different rows and share a single column transfer line for each predetermined number of pixels adjacent in a row direction and; a constant current source configured to transfer the imaging signals; output units configured to externally output the imaging signals; and a control unit configured to simultaneously and externally outputs, by simultaneously driving the plurality of shared pixels present in a same single column transfer line in the plurality of different rows, each of the plurality of imaging signals, which are output from the shared pixels and are present in the same column in the plurality of different rows, and externally output all of the imaging signals of the shared pixels present in the plurality of different rows same number of times as the predetermined number.