Abstract: An antenna module is an antenna module attached to a roof in a vehicle and includes a substrate and a plurality of antennas provided on the substrate, wherein the substrate is kept in a curved state.

Abstract: An antenna device, for a mobile body, of this disclosure includes an antenna configured to be installed in the mobile body, and a reflector having a reflection surface configured to change a beam direction of the antenna.

Abstract: [Task to Be Achieved] To provide a chemically amplified type positive copolymer for semiconductor lithography, which has eliminated the problems of prior art, has a high development contrast, and has excellent resolution in fine-pattern formation; a composition for semiconductor lithography which contains the copolymer; and a process for producing the copolymer. [Means for Achievement] The copolymer for semiconductor lithography according to the present invention is a copolymer which has at least (A) a repeating unit having a structure which has an alkali-soluble group protected by an acid-labile, dissolution-suppressing group, (B) a repeating group having a lactone structure and (C) a repeating group having an alcoholic hydroxyl group and which is characterized by having an acid value of 0.01 mmol/g or less as determined by dissolving the copolymer in a solvent and subjecting the solution to neutralization titration with a solution of an alkali metal hydroxide using Bromothymol Blue as an indicator.

Abstract: A radical polymerization initiator represented by the following formula (G) in the formula (G), R71 and R72 are each a hydrocarbon group of 3 to 6 carbon atoms which may contain nitrogen atom; R73 and R74 are each a hydrogen atom or an acid-dissociating, dissolution-suppressing group; and at least one of R73 and R74 is an acid-dissociating, dissolution-suppressing group represented by the following formula (R78); and wherein R77 is a hydrocarbon group of 1 to 26 carbon atoms which may contain hetero atoms.

Abstract: A method of producing a copolymer solution for semiconductor lithography having a copolymer and a solvent for coating film formation, which copolymer contains at least one repeating unit selected from the group consisting of: a repeating unit (A) having a hydroxyl group; a repeating unit (B) having a structure in which a hydroxyl group is protected by a group which suppresses dissolution into an alkaline developer and which dissociates in the action of an acid; a repeating unit (C) having a lactone structure; and a repeating unit (D) having a cyclic ether structure, the difference in the copolymer concentration among a plurality of containers which were filled with copolymer solution from the same manufacturing lot is not more than a certain range, or the method includes a certain production step.

Abstract: The present invention provides a copolymer which can prevent problems associated with immersion lithography (including occurrence of a pattern defect such as water mark, and variation in sensitivity or abnormal patterning due to elution of an additive such as a radiation-sensitive acid-generator) and which provides surface characteristics suitable for immersion lithography, and a composition containing the copolymer.

Abstract: Solving problems in the prior art, provided are a resist polymer which is small in lot-to-lot, reactor-to-reactor and scale-to-scale variations, and contains no high polymer, is excellent in solubility and storage stability, and is suitable for fine pattern formation, and a method for production thereof. The present invention provides the resist polymer at least having a repeating unit having a structure which is decomposed by an acid to become soluble in an alkali developer and a repeating unit having a polar group to enhance adhesion to a substrate, characterized in that a peak area of a high molecular weight component (high polymer) with molecular weight of 100,000 or more is 0.1% or less based on an entire peak area in a molecular weight distribution determined, by gel permeation chromatography (GPC).

Abstract: A copolymer for positive type lithography, having at least a recurring unit (A) having a structure wherein an alkali-soluble group is protected by an acid-dissociating, dissolution-suppressing group, represented by the following formula (A) [in the formula (A), R10 is a hydrogen atom or a hydrocarbon group which may be substituted by fluorine atom; R11 is a crosslinked, alicyclic hydrocarbon group; n is an integer of 0 or 1; and R12 is an acid-dissociating, dissolution-suppressing group], and a terminal structure (B) having a structure wherein an alkali-soluble group is protected by an acid-dissociating, dissolution-suppressing group, represented by the following formula (B) [in the formula (B), R21 is a hydrocarbon group which may contain nitrogen atom; R22 is an acid-dissociating, dissolution-suppressing group; and p is a site of bonding with copolymer main chain].

Abstract: A resist polymer solution comprising a resist polymer containing a repeating unit decomposed by the action of an acid so as to be soluble in alkali and a repeating unit having a polar group, the resist polymer dissolved in a solvent for coating film formation, wherein the amount of impurities whose boiling point is not higher than that of the solvent for coating film formation is 1 mass % or less based on the resist polymer. Further, there is provided a process for producing a resist polymer solution, comprising the step (1) of redissolving a solid matter containing a resist polymer in a solvent for coating film formation (a) and/or a solvent (b) whose boiling point at atmospheric pressure is not higher than that of the solvent (a); and the impurity removing step (2) of distilling off the solvent (b) and/or any excess amount of solvent (a) in vacuum from the redissolution solution obtained in the step (1).

Abstract: A copolymer for positive type lithography, having at least a recurring unit (A) having a structure wherein an alkali-soluble group is protected by an acid-dissociating, dissolution-suppressing group, represented by the following formula (A) [in the formula (A), R10 is a hydrogen atom or a hydrocarbon group which may be substituted by fluorine atom; R11 is a crosslinked, alicyclic hydrocarbon group; n is an integer of 0 or 1; and R12 is an acid-dissociating, dissolution-suppressing group], and a terminal structure (B) having a structure wherein an alkali-soluble group is protected by an acid-dissociating, dissolution-suppressing group, represented by the following formula (B) [in the formula (B), R21 is a hydrocarbon group which may contain nitrogen atom; R22 is an acid-dissociating, dissolution-suppressing group; and p is a site of bonding with copolymer main chain]. The copolymer is used in chemically amplified positive type lithography and is superior in lithography properties (e.g.

Abstract: To provide a method for producing a polymer for semiconductor lithography which can attain high uniformity in the polymer from lot to lot. The method for producing a polymer for semiconductor lithography includes the step (P) of heating a polymerizable monomer and a polymerization initiator in a solvent, to thereby polymerize the monomer, the step (P) having the step of controlling a polymerization pressure by regulating a liquid level in a container (WO) which is disposed between a polymerization tank and the atmospheric air and which provides liquid sealing.

Abstract: Provided are a positive resist composition and a resist pattern forming method having fewer defects and superior lithographic characteristics. The positive resist composition includes a resin component (A) which has on a main chain a structural unit derived from an (?-lower alkyl)acrylate ester and exhibits increased alkali solubility under the action of an acid, and an acid generating component (B) which generates the acid upon irradiation with radiation, in which the resin component (A) is a copolymer having at least two structural units which is obtained by incorporating an acid when polymerizing at least one monomer for the production thereof.

Abstract: To provide a copolymer for semiconductor lithography employed for forming a resist film as well as thin films such as an anti-reflection film, a gap-filling film, a top coating film, etc. which are formed on or under a resist film, these films being employed in semiconductor lithography, wherein the copolymer has excellent solubility in a solution of a thin film-forming composition and prevents generation of microparticles (e.g., microgel) and pattern defects, and to provide a method for producing the copolymer reliably on an industrial scale.

Abstract: In order to improve a resist pattern shape in a semiconductor lithography process, which is a factor largely affecting on a processing precision, an integration degree and yield, a copolymer for semiconductor lithography where a composition of a hydroxyl group-containing repeating unit in a low molecular weight region is controlled, and a method of producing the same are provided. According to the invention, in a copolymer for semiconductor lithography, which is obtained by copolymerizing a monomer having a hydroxyl group and a monomer having no hydroxyl group, when a copolymer of which composition of a hydroxyl group-containing repeating unit is controlled is used, the object can be achieved.

Abstract: In order to improve a resist pattern shape in a semiconductor lithography process, which is a factor largely affecting on a processing precision, an integration degree and yield, a copolymer for semiconductor lithography where a composition of a hydroxyl group-containing repeating unit in a low molecular weight region is controlled, and a method of producing the same are provided. According to the invention, in a copolymer for semiconductor lithography, which is obtained by copolymerizing a monomer having a hydroxyl group and a monomer having no hydroxyl group, when a copolymer of which composition of a hydroxyl group-containing repeating unit is controlled is used, the object can be achieved.

Abstract: Efficient and reproducible production of a copolymer for lithography, which has stable quality, with little lot-to-lot variations, and is suited for film-forming and coating compositions. Radical polymerization of a monomer, which contains at least one ethylenic double bond, with an initiator, in a solvent, and purification of the reaction mixture by precipitation and filtration, in a hermetically-closable single vessel divided by a filter medium, into a first section provided with fluid feeding means and agitating means, and a second section with fluid drawing means. Feeding the reaction mixture from the fluid feeding means into the first section of the vessel, containing a poor solvent, and contacting the reaction mixture with the poor solvent to precipitate a solid; and filtering the resulting fluid, containing the precipitated solid, through the filter medium, drawing the resultant filtrate through the fluid drawing means, and then separating the precipitated solid.

Abstract: A method of producing a copolymer solution for semiconductor lithography having a copolymer and a solvent for coating film formation, which copolymer contains at least one repeating unit selected from the group consisting of: a repeating unit (A) having a hydroxyl group; a repeating unit (B) having a structure in which a hydroxyl group is protected by a group which suppresses dissolution into an alkaline developer and which dissociates in the action of an acid; a repeating unit (C) having a lactone structure; and a repeating unit (D) having a cyclic ether structure, the difference in the copolymer concentration among a plurality of containers which were filled with copolymer solution from the same manufacturing lot is not more than a certain range, or the method includes a certain production step.

Abstract: A copolymer for semiconductor lithography, comprising at least a recurring unit (A) having a carboxylic acid ester structure whose solubility in alkali increases by the action of an acid and a carboxyl group-containing recurring unit (B), which copolymer is obtained via a step (P) of (co)polymerizing at least a monomer giving a recurring unit (A) and a step (Q) of forming a recurring unit (B) in the co-presence of a recurring unit (A)-containing (co)polymer and/or a monomer giving a recurring unit (A), and an acid. The copolymer is used in production of semiconductor as a resist polymer which is small in roughness, little in development defect and superior in lithography properties such as DOF and the like.

Abstract: [Task to be Achieved] To provide a chemically amplified type positive copolymer for semiconductor lithography, which has eliminated the problems of prior art, has a high development contrast, and has excellent resolution in fine-pattern formation; a composition for semiconductor lithography which contains the copolymer; and a process for producing the copolymer. [Means for Achievement] The copolymer for semiconductor lithography according to the present invention is a copolymer which has at least (A) a repeating unit having a structure which has an alkali-soluble group protected by an acid-labile, dissolution-suppressing group, (B) a repeating group having a lactone structure and (C) a repeating group having an alcoholic hydroxyl group and which is characterized by having an acid value of 0.01 mmol/g or less as determined by dissolving the copolymer in a solvent and subjecting the solution to neutralization titration with a solution of an alkali metal hydroxide using Bromothymol Blue as an indicator.

Abstract: To provide a method for producing a polymer for semiconductor lithography which can attain high uniformity in the polymer from lot to lot. The method for producing a polymer for semiconductor lithography includes the step (P) of heating a polymerizable monomer and a polymerization initiator in a solvent, to thereby polymerize the monomer, the step (P) having the step of controlling a polymerization pressure by regulating a liquid level in a container (WO) which is disposed between a polymerization tank and the atmospheric air and which provides liquid sealing.